用第一性原理计算了单层Mo(SxSe1-x)2的电子和光学性质

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Chuan-Zhen Zhao, Tai-Ning Xu, Hui-Jing Hu
{"title":"用第一性原理计算了单层Mo(SxSe1-x)2的电子和光学性质","authors":"Chuan-Zhen Zhao,&nbsp;Tai-Ning Xu,&nbsp;Hui-Jing Hu","doi":"10.1016/j.mee.2025.112349","DOIUrl":null,"url":null,"abstract":"<div><div>First-principles calculations are conducted to explore the electronic and optical properties of the monolayer Mo(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub>. It is found that the monolayer Mo(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub> possesses a direct bandgap. Through fitting the theoretical and experimental data, the bandgap bowing parameter of 0.051 eV is attained. The enlargement of the bandgap energy is by reason of the decline of the K VBM. In the full component range, the downward movements of the K CBM and the K VBM are dominated by the <span><math><msub><mi>p</mi><mrow><mi>S</mi><mo>−</mo><mn>3</mn><mi>p</mi></mrow></msub><mo>−</mo><msub><mi>d</mi><mrow><mi>Mo</mi><mo>−</mo><mn>4</mn><mi>d</mi></mrow></msub></math></span> coupling interaction and the total p-d coupling interaction, respectively. For the optical properties, it is found that increasing S component can reduce the static dielectric constant. However, the B and C excitons as well as E<sub>3</sub> shift toward the higher energy direction with increasing S component. It is also found that increasing S component has a small effect on enhancing the light absorption. The photoconductivity shows a similar result with the absorptivity.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112349"},"PeriodicalIF":2.6000,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The electronic and optical properties of the monolayer Mo(SxSe1-x)2 by the first-principle calculations\",\"authors\":\"Chuan-Zhen Zhao,&nbsp;Tai-Ning Xu,&nbsp;Hui-Jing Hu\",\"doi\":\"10.1016/j.mee.2025.112349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>First-principles calculations are conducted to explore the electronic and optical properties of the monolayer Mo(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub>. It is found that the monolayer Mo(S<sub>x</sub>Se<sub>1-x</sub>)<sub>2</sub> possesses a direct bandgap. Through fitting the theoretical and experimental data, the bandgap bowing parameter of 0.051 eV is attained. The enlargement of the bandgap energy is by reason of the decline of the K VBM. In the full component range, the downward movements of the K CBM and the K VBM are dominated by the <span><math><msub><mi>p</mi><mrow><mi>S</mi><mo>−</mo><mn>3</mn><mi>p</mi></mrow></msub><mo>−</mo><msub><mi>d</mi><mrow><mi>Mo</mi><mo>−</mo><mn>4</mn><mi>d</mi></mrow></msub></math></span> coupling interaction and the total p-d coupling interaction, respectively. For the optical properties, it is found that increasing S component can reduce the static dielectric constant. However, the B and C excitons as well as E<sub>3</sub> shift toward the higher energy direction with increasing S component. It is also found that increasing S component has a small effect on enhancing the light absorption. The photoconductivity shows a similar result with the absorptivity.</div></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":\"299 \",\"pages\":\"Article 112349\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2025-04-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931725000383\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000383","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

利用第一性原理计算探讨了单层Mo(SxSe1-x)2的电子和光学性质。发现单层Mo(SxSe1-x)2具有直接带隙。通过理论和实验数据的拟合,得到了0.051 eV的带隙弯曲参数。带隙能量的增大是由于K - VBM的衰减引起的。在全分量范围内,K - CBM和K - VBM的下降分别由pS−3p−dMo−4d耦合作用和总p-d耦合作用主导。对于光学性质,发现增加S分量可以降低静态介电常数。而随着S分量的增加,B、C激子以及E3向高能方向移动。增加S组分对增强光吸收的作用较小。光电导率与吸收率有相似的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

The electronic and optical properties of the monolayer Mo(SxSe1-x)2 by the first-principle calculations

The electronic and optical properties of the monolayer Mo(SxSe1-x)2 by the first-principle calculations
First-principles calculations are conducted to explore the electronic and optical properties of the monolayer Mo(SxSe1-x)2. It is found that the monolayer Mo(SxSe1-x)2 possesses a direct bandgap. Through fitting the theoretical and experimental data, the bandgap bowing parameter of 0.051 eV is attained. The enlargement of the bandgap energy is by reason of the decline of the K VBM. In the full component range, the downward movements of the K CBM and the K VBM are dominated by the pS3pdMo4d coupling interaction and the total p-d coupling interaction, respectively. For the optical properties, it is found that increasing S component can reduce the static dielectric constant. However, the B and C excitons as well as E3 shift toward the higher energy direction with increasing S component. It is also found that increasing S component has a small effect on enhancing the light absorption. The photoconductivity shows a similar result with the absorptivity.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信