TCAD simulations of radiation damage in 4H-SiC

Abstract

In this paper we present simulation based radiation damage modeling of 4H silicon carbide (SiC) using the technology computer aided design (TCAD) tools for up to 1 kV forward and backward bias. After verifying the TCAD framework from Global TCAD Solutions (GTS) against Sentaurus simulations for silicon we use it to approximate measurements of neutron-irradiated 4H-SiC particle detectors, i.e., pin-diodes. Based on our simulations we are not only able to evaluate the accuracy of the predictions but also to provide an explanation for the almost negligible current of radiated devices under high forward bias.