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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

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Analog and Mixed-Signal Millimeter-Wave SiGe BiCMOS Circuits: State of the Art and Future Scaling 模拟和混合信号毫米波SiGe BiCMOS电路:技术现状和未来缩放
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751027
S. Voinigescu, S. Shopov, J. Hoffman, K. Vasilakopoulos
{"title":"Analog and Mixed-Signal Millimeter-Wave SiGe BiCMOS Circuits: State of the Art and Future Scaling","authors":"S. Voinigescu, S. Shopov, J. Hoffman, K. Vasilakopoulos","doi":"10.1109/CSICS.2016.7751027","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751027","url":null,"abstract":"This paper reviews recent work on 100+Gb/s SiGe BiCMOS circuits and system architectures for future wireless backhaul and 1Tb/s fiber-optics systems, and explores technology requirements and benchmark circuit scaling in future SiGe BiCMOS nodes for these applications. Among the circuits discussed are a 240GHz signal source with over 7dBm output power, a 108GS/s track and hold amplifier, 120Gb/s TIA, 135GHz bandwidth linear low-noise amplifier, 80GHz bandwidth linear distributed driver with over 6Vpp output swing, and a proof-ofconcept 120GS/s power-DAC test vehicle with 6Vpp differential output swing.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132150696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Mechanism of Current-Collapse-Free Operation in E-Mode GaN Gate Injection Transistors Employed for Efficient Power Conversion 用于高效功率转换的e型GaN栅极注入晶体管无电流坍缩工作机制
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751053
Kenichiro Tanaka, T. Morita, H. Umeda, S. Tamura, H. Ishida, M. Ishida, T. Ueda
{"title":"Mechanism of Current-Collapse-Free Operation in E-Mode GaN Gate Injection Transistors Employed for Efficient Power Conversion","authors":"Kenichiro Tanaka, T. Morita, H. Umeda, S. Tamura, H. Ishida, M. Ishida, T. Ueda","doi":"10.1109/CSICS.2016.7751053","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751053","url":null,"abstract":"Due to the superior characteristics of GaN to Si, they can be utilized to drastically increase the efficiency and minimize the size of power converter system. However, there has been a critical issue of the so-called current collapse where ON-state resistance is increased once GaN transistor is exposed to high voltage. From the temperature dependence of the switching characteristics of an enhancement-mode GaN transistor, we found that deep ``hole traps'' play an important role in the current collapse. Based on this finding, we proposed a new device structure where hole emission in the OFF state is compensated by the holes injected from a drain-side pGaN. It was found that the proposed device is free from current collapse up to 800V. In this paper, we proposed the mechanism for the suppression of the current collapse in the proposed GaN transistor.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132371654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Digital Clock and Data Recovery Circuits for Optical Links 用于光链路的数字时钟和数据恢复电路
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751036
Guanghua Shu, Woo-Seok Choi, P. Hanumolu
{"title":"Digital Clock and Data Recovery Circuits for Optical Links","authors":"Guanghua Shu, Woo-Seok Choi, P. Hanumolu","doi":"10.1109/CSICS.2016.7751036","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751036","url":null,"abstract":"Clock and Data Recovery (CDR) circuits perform the function of recovering clock and re-timing received data in optical links. These CDRs must be capable of tolerating large input jitter (high JTOL), filter input jitter (low JTRAN with no jitter peaking) and in burst-mode applications be capable of phase locking in a very short time. In this paper, we elucidate these design tradeoffs and present various CDR architectures that can overcome them. Specifically, D/PLL CDR architecture that achieves high JTOL, low JTRAN, and no jitter peaking is described. A new burst-mode CDR that can lock instantaneously while filtering input jitter is also discussed.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134365336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 10-Gb/s, 100-GHz RF Power-DAC Transmitter with On-Die I/Q Driven Antenna Elements and Free-Space Constellation Formation 采用片上I/Q驱动天线元件和自由空间星座形成的10gb /s, 100ghz射频功率dac发射机
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751011
S. Shopov, O. Gurbuz, Gabriel M. Rebeiz, S. Voinigescu
{"title":"A 10-Gb/s, 100-GHz RF Power-DAC Transmitter with On-Die I/Q Driven Antenna Elements and Free-Space Constellation Formation","authors":"S. Shopov, O. Gurbuz, Gabriel M. Rebeiz, S. Voinigescu","doi":"10.1109/CSICS.2016.7751011","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751011","url":null,"abstract":"A fully digital mm-wave transmitter with free- space constellation formation above the on-chip antennas is demonstrated at 100 GHz for the first time in a production 45-nm SOI CMOS technology. The transmitter features an RF-DAC architecture with antenna-level segmentation where two DAC elements are driven in quadrature by the external 100-GHz LO signal through an on- chip I/Q hybrid. Each DAC element has 13.9-dBm output power and consists of an on-die differential antenna on quartz superstrate driven by a large power output stage with direct on-off and BPSK modulation. A peak EIRP of 15.7 dBm was measured at 100 GHz with the antenna- limited 3-dB bandwidth extending from 97 to 103 GHz. Data rates of up to 4, 5, and 10 Gb/s were achieved with 9-QAM, BPSK, and QPSK modulation formats, respectively, measured at a distance of 189 mm.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130591513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Terahertz Sources and Receivers for Science Applications and Test & Measurement Systems 用于科学应用和测试与测量系统的太赫兹信号源和接收器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751069
T. Crowe, J. Hesler, E. Bryerton, S. Retzloff
{"title":"Terahertz Sources and Receivers for Science Applications and Test & Measurement Systems","authors":"T. Crowe, J. Hesler, E. Bryerton, S. Retzloff","doi":"10.1109/CSICS.2016.7751069","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751069","url":null,"abstract":"Solid-state sources and receivers are now available throughout the frequency range from 100 GHz to 3 THz. Although III-V MMIC amplifiers and Si-Ge technology are beginning to extend throughout this band, systems based on GaAs Schottky diodes still offer the best performance for most applications. These include a variety of important applications in science, and also test & measurement equipment for laboratory use, such as VNA frequency extenders. This paper will review progress in this important technology with emphasis on recent results and its application.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129920314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control 650 V高可靠的GaN hemt在硅衬底上的多代:匹配硅CMOS制造指标和过程控制
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751008
S. Chowdhury, YiFeng Wu, Likun Shen, Kurt V. Smith, Peter Smith, T. Kikkawa, J. Gritters, L. McCarthy, R. Lal, R. Barr, Zhan Wang, U. Mishra, P. Parikh, T. Hosoda, K. Shono, K. Imanishi, T. Ogino, Akitoshi Mochizuki, K. Kiuchi, Y. Asai
{"title":"650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control","authors":"S. Chowdhury, YiFeng Wu, Likun Shen, Kurt V. Smith, Peter Smith, T. Kikkawa, J. Gritters, L. McCarthy, R. Lal, R. Barr, Zhan Wang, U. Mishra, P. Parikh, T. Hosoda, K. Shono, K. Imanishi, T. Ogino, Akitoshi Mochizuki, K. Kiuchi, Y. Asai","doi":"10.1109/CSICS.2016.7751008","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751008","url":null,"abstract":"Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonstrated with over one thousand wafers worth of data spread over two generations of technology nodes covering multiple products and packages collected during ramp up post qualification. Silicon manufacturing processes are employed including gold-free processes that avoid the use of evaporation/liftoff typical to compound semiconductors. Probe yield and Line yield for the GaN process now matches mature Si-CMOS process running in the same fabrication facility. Extended qualification results beyond JEDEC standard are also shown for GaN products for the first time. Products in cascode configuration were tested. Wide bandgap high speed and high voltage GaN devices significantly reduce the system size and improve energy efficiency of power conversion in all areas of electricity conversion, ranging from PV inverters to electric vehicles making the above results significant and making GaN high volume production a reality.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121652702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Interconnect Technologies for Terabit-per-Second Die-to-Die Interfaces 每秒太比特芯片对芯片接口的互连技术
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751049
Behzad Dehlaghi, R. Beerkens, D. Tonietto, A. C. Carusone
{"title":"Interconnect Technologies for Terabit-per-Second Die-to-Die Interfaces","authors":"Behzad Dehlaghi, R. Beerkens, D. Tonietto, A. C. Carusone","doi":"10.1109/CSICS.2016.7751049","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751049","url":null,"abstract":"Seamless package-level integration of multiple dies for high-performance computing and networking requires broadband dense die-to-die interconnect. Organic packaging substrates offer lower cost and lower loss interconnect, whereas silicon interposers offer higher density interconnect. In this work, a silicon interposer is fabricated in a relatively inexpensive 0.35 μm CMOS technology as an alternative to conventional organic or silicon interposer substrates. Flip-chip assembly technologies such as solder and gold-stud bumping are discussed. Measured eye diagrams at 16.4 Gb/s and bathtub curves at 20 Gb/s show the impact of assembly and bumping technology on the link performance. Considering signal integrity issues such as inter-symbol interference (ISI) and crosstalk, the maximum achievable aggregate bit rate is estimated for different interconnect lengths.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115520275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power 基于AlGaN/GaN HEMT技术的宽带e波段功率放大器MMIC，输出功率为30dbm
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751030
D. Schwantuschke, B. Godejohann, S. Breuer, P. Bruckner, M. Mikulla, R. Quay, O. Ambacher
{"title":"Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power","authors":"D. Schwantuschke, B. Godejohann, S. Breuer, P. Bruckner, M. Mikulla, R. Quay, O. Ambacher","doi":"10.1109/CSICS.2016.7751030","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751030","url":null,"abstract":"This paper reports on the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz & 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest. The circuit was fabricated by using an advanced 100 nm GaN high-electron-mobility transistor technology with an AlN-interlayer epitaxy, demonstrating a transit frequency ft of more than 100 GHz and a power density as high as 1.9 W/mm at 94 GHz in continuous-wave load-pull operation. A state-space approach is applied for the device modeling, which enables a successful first-pass circuit design.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131054605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Time-Resolved Micro-Beam X-Ray Absorption Fine Structure (XAFS) Measurement to Investigate the Cause of a Current Collapse of GaN-HEMTs 时间分辨微束x射线吸收精细结构(XAFS)测量研究gan - hemt电流坍塌的原因
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751073
Y. Tateno, T. Kouchi, T. Komatani, Hiroshi Yamamoto, T. Yonemura, J. Iihara, Y. Saito, T. Nakabayashi
{"title":"Time-Resolved Micro-Beam X-Ray Absorption Fine Structure (XAFS) Measurement to Investigate the Cause of a Current Collapse of GaN-HEMTs","authors":"Y. Tateno, T. Kouchi, T. Komatani, Hiroshi Yamamoto, T. Yonemura, J. Iihara, Y. Saito, T. Nakabayashi","doi":"10.1109/CSICS.2016.7751073","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751073","url":null,"abstract":"The purpose of our work was to carry out a direct measurement of a GaN's surface condition under a voltage stress, and to identify a cause of a current collapse. Using pulsed S-parameters measurements immediately after the voltage stress was applied for the GaN HEMT, equivalent circuit parameters were extracted, and we estimated the virtual gate length which induced the current collapse. And we carried out time resolved micro-beam X-ray Absorption Fine Structure (XAFS) measurement after the voltage stress was applied. As a result, by the applied voltage stress, an X-ray Absorption Near Edge Structure (XANES) spectrum of gallium, Ga, was found to be changed. This means the surface condition of GaN was changed in the virtual gate region by the voltage stress.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of Odd-Mode Parametric Instabilities at Fundamental Frequency in an X-Band MMIC Power Amplifier x波段MMIC功率放大器基频奇模参数不稳定性分析
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751028
S. Dellier, L. Mori, J. Collantes, A. Anakabe, C. Campbell
{"title":"Analysis of Odd-Mode Parametric Instabilities at Fundamental Frequency in an X-Band MMIC Power Amplifier","authors":"S. Dellier, L. Mori, J. Collantes, A. Anakabe, C. Campbell","doi":"10.1109/CSICS.2016.7751028","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751028","url":null,"abstract":"Odd-mode parametric oscillations are a common cause of malfunctioning in power amplifiers. A very typical example of odd mode oscillation is the showing up of a spurious component at the fundamental frequency divide-by-two for some input power values. In this paper, a less known instability of odd-mode nature is analyzed. It occurs at the fundamental frequency, without the generation of spurious spectral lines at sub-harmonic frequencies. The instability is detected using pole-zero stability analysis and a procedure for determining the oscillation mode is given. The analysis is applied to an X-band MMIC power amplifier that was found to be unstable when measured in the lab. Using the information provided by the stability analysis, a stable second version of the MIMIC has been successfully fabricated and measured.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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