基于AlGaN/GaN HEMT技术的宽带e波段功率放大器MMIC，输出功率为30dbm

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751030

D. Schwantuschke, B. Godejohann, S. Breuer, P. Bruckner, M. Mikulla, R. Quay, O. Ambacher

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引用次数: 14

摘要

本文报道了一种覆盖整个e波段卫星通信频段(71-76 GHz和81-86 GHz)的功率放大器的设计，并展示了在该感兴趣的频率范围内超过1 W的高饱和输出功率。该电路采用先进的100nm氮化镓高电子迁移率晶体管技术和aln层间外延制成，在连续波负载-拉工作中，传输频率ft超过100ghz，功率密度高达1.9 W/mm。采用状态空间方法进行器件建模，实现了成功的首通电路设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power

This paper reports on the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz & 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest. The circuit was fabricated by using an advanced 100 nm GaN high-electron-mobility transistor technology with an AlN-interlayer epitaxy, demonstrating a transit frequency ft of more than 100 GHz and a power density as high as 1.9 W/mm at 94 GHz in continuous-wave load-pull operation. A state-space approach is applied for the device modeling, which enables a successful first-pass circuit design.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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