S. Voinigescu, S. Shopov, J. Hoffman, K. Vasilakopoulos
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Analog and Mixed-Signal Millimeter-Wave SiGe BiCMOS Circuits: State of the Art and Future Scaling
This paper reviews recent work on 100+Gb/s SiGe BiCMOS circuits and system architectures for future wireless backhaul and 1Tb/s fiber-optics systems, and explores technology requirements and benchmark circuit scaling in future SiGe BiCMOS nodes for these applications. Among the circuits discussed are a 240GHz signal source with over 7dBm output power, a 108GS/s track and hold amplifier, 120Gb/s TIA, 135GHz bandwidth linear low-noise amplifier, 80GHz bandwidth linear distributed driver with over 6Vpp output swing, and a proof-ofconcept 120GS/s power-DAC test vehicle with 6Vpp differential output swing.
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