发布求助
文献互助 智能选刊 最新文献

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

筛选
英文 中文
Recent Progress of Diamond Devices for RF Applications 射频领域金刚石器件的最新进展
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751060
M. Kasu, T. Oishi
{"title":"Recent Progress of Diamond Devices for RF Applications","authors":"M. Kasu, T. Oishi","doi":"10.1109/CSICS.2016.7751060","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751060","url":null,"abstract":"Diamond possesses exceptional physical properties, such as a high breakdown field and carrier mobility. It is therefore expected to be highly efficient for high-power RF devices. We identify hole carrier doping in diamond using nitrogen dioxide (NO2). Furthermore, we find that an aluminum oxide (Al2O3) passivation layer greatly improves the thermal stability of the hole channel. These two technologies enable us to create thermally stable high-performance diamond field-effect transistors (FETs). The diamond FET shows a maximum IDS value of -1.35 A/mm, cut-off frequencies fT and fMAX of 35 GHz and 70 GHz, respectively, and an RF output power density of 2 W/mm at 1 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117006481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Wide-Band Complementary Digital Driver for Pulse Modulated Single-Ended and Differential S/C Bands Class-E PAs in 130 nm GaAs Technology 130 nm GaAs技术中脉冲调制单端和差分S/C波段e类PAs的宽带互补数字驱动器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751025
S. Rashid, B. Dupaix, P. Watson, Wagdy M. Gaber, V. Patel, A. Mattamana, S. Dooley, M. LaRue, W. Khalil
{"title":"A Wide-Band Complementary Digital Driver for Pulse Modulated Single-Ended and Differential S/C Bands Class-E PAs in 130 nm GaAs Technology","authors":"S. Rashid, B. Dupaix, P. Watson, Wagdy M. Gaber, V. Patel, A. Mattamana, S. Dooley, M. LaRue, W. Khalil","doi":"10.1109/CSICS.2016.7751025","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751025","url":null,"abstract":"Wide-band digital drivers are indispensable for SMPAs (Switched Mode Power Amplifiers) in PWM (Pulse Width Modulation) and PPM (Pulse Position Modulation) applications. This paper presents the design of a wideband RF pre-amplifying buffer, innovated for very low dropout and low power complementary operation in heterojunction technologies affording only depletion type devices. A simple, passive bias level shifting technique is also incorporated to facilitate interfacing the digital modulator in silicon substrate with the PA in III-V wafer. In order to experimentally validate the concepts, the proposed driver is employed for driving an S-band single-ended class-E PA as well as for its differential version, modified to switch over S and C bands, in 130 nm GaAs pHEMT technology. The output powers of the differential amplifier are combined using on-chip transformer balun. Test results of both chips demonstrate that the implemented drivers consume less than 4% of the overall PA efficiencies, wherein the buffer responds linearly to the wideband input pulses when tested alone.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114265905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ultra-Wideband mm-Wave InP Power Amplifiers in 130 nm InP HBT Technology 130 nm InP HBT技术的超宽带毫米波InP功率放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751077
R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell
{"title":"Ultra-Wideband mm-Wave InP Power Amplifiers in 130 nm InP HBT Technology","authors":"R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell","doi":"10.1109/CSICS.2016.7751077","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751077","url":null,"abstract":"We present power amplifier ICs with a small-signal measured 3dB-bandwidth spanning from 24 GHz to 114 GHz, implemented in a 130 nm InP HBT process. The PAs were designed using sub-quarter wavelength transmission-line baluns for output matching and series power combining. The small signal gain is 15 dB and the DC power consumption is 800 mW in low power operation. The measured output power at 3-dB gain-compression varies between 16.5 dBm and 22dBm between 50 GHz and 100 GHz. The peak PAE is larger than 8 % over the same range. The saturated output power and PAE at 90 GHz are 21.95 dBm and 14.7 % respectively.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125912277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
70+Gb/s VCSEL-Based Multimode Fiber Links 70+Gb/s vcsel多模光纤链路
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751010
D. Kuchta, A. Rylyakov, F. Doany, C. Schow, J. Proesel, C. Baks, P. Westbergh, J. Gustavsson, A. Larsson
{"title":"70+Gb/s VCSEL-Based Multimode Fiber Links","authors":"D. Kuchta, A. Rylyakov, F. Doany, C. Schow, J. Proesel, C. Baks, P. Westbergh, J. Gustavsson, A. Larsson","doi":"10.1109/CSICS.2016.7751010","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751010","url":null,"abstract":"We report on an 850nm VCSEL based link operating error free to 71 Gb/s using an NRZ modulation format. This optical link uses custom transmitter and receiver ICs with 2-tap Feed Forward Equalization implemented in 130nm BiCMOS and GaAs based VCSELs and photodiodes. This paper covers new aspects of the circuits and packaging.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126057107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of Stresses in GaN HEMT Layers on a Diamond Substrate Using Micro-Raman Spectroscopy 用微拉曼光谱研究金刚石衬底上GaN HEMT层的应力
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751050
B. L. Hancock, M. Nazari, Jonathan Anderson, E. Piner, M. Holtz
{"title":"Investigation of Stresses in GaN HEMT Layers on a Diamond Substrate Using Micro-Raman Spectroscopy","authors":"B. L. Hancock, M. Nazari, Jonathan Anderson, E. Piner, M. Holtz","doi":"10.1109/CSICS.2016.7751050","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751050","url":null,"abstract":"Visible and ultraviolet (UV) micro-Raman spectroscopies are used to study the stress in GaN integrated with diamond grown by chemical vapor deposition. Mapping of stress is accomplished across a 75-mm GaN-on-diamond wafer. UV measurements from both sides of the wafer reveal an unexpected gradient between the tensile stress from the free GaN surface (~0.86 GPa) and the GaN/Diamond interface (~0.23 GPa). This gradient is understood through non-uniformities in the material along the growth direction of the layers, with relaxation attributed to threading dislocations. Simulations incorporating stress relaxation in the elastic modulus describe the observed dependence. Measurements from TEM support this conclusion.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122105482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751051
M. Micovic, David F. Brown, D. Regan, J. Wong, J. Tai, A. Kurdoghlian, F. Herrault, Yan Tang, S. Burnham, H. Fung, A. Schmitz, I. Khalaf, D. Santos, E. Prophet, H. Bracamontes, C. Mcguire, R. Grabar
{"title":"Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology","authors":"M. Micovic, David F. Brown, D. Regan, J. Wong, J. Tai, A. Kurdoghlian, F. Herrault, Yan Tang, S. Burnham, H. Fung, A. Schmitz, I. Khalaf, D. Santos, E. Prophet, H. Bracamontes, C. Mcguire, R. Grabar","doi":"10.1109/CSICS.2016.7751051","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751051","url":null,"abstract":"We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 dB measured at a frequency of 37 GHz, NF <; 2 dB with >24dB of gain across 28 GHz- 39.2 GHz frequency range, and a very broad range of usable DC bias conditions (Vd: 0.6V - 4V; Pdc: 5 mW- 310 mW). This is to the best of our knowledge the lowest NF reported for GaN LNA in this frequency band.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126339388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Millimeter Wave: The Future of Commercial Wireless Systems 毫米波:商用无线系统的未来
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751056
R. Heath
{"title":"Millimeter Wave: The Future of Commercial Wireless Systems","authors":"R. Heath","doi":"10.1109/CSICS.2016.7751056","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751056","url":null,"abstract":"Millimeter wave (mmWave) is coming to fifth generation (5G) cellular, wireless local area networks (WLANs), and wireless personal area networks (WPANs). The benefits of using millimeter wave carriers arise from the potential for larger bandwidths (hundreds of megahertz to gigahertz) compared to lower carrier frequencies. Differences in the propagation, challenges introduced by hardware constraints, and computational issues related to the high data rates have reinvigorated research in wireless communications. This paper, which accompanies a keynote talk with the same name, provides a roadmap to the author's research results in the evolving area of mmWave for consumers.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131931374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
High Power Monolithic pHemt GaAs Limiter for T/R Module 用于T/R模块的高功率单片金属砷化镓限幅器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751041
B. Pham, Duy P. Nguyen, A. Pham, Phong D. Le
{"title":"High Power Monolithic pHemt GaAs Limiter for T/R Module","authors":"B. Pham, Duy P. Nguyen, A. Pham, Phong D. Le","doi":"10.1109/CSICS.2016.7751041","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751041","url":null,"abstract":"In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130496550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications 太赫兹波无线通信中基于InP、GaN和insb的hemt和mmic的研究与开发
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751063
I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako, H. Hamada, T. Kosugi, M. Yaita, A. Moutaouakil, H. Matsuzaki, O. Kagami, T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara, D. Tsuji, K. Isono, S. Fujikawa, H. Fujishiro
{"title":"Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications","authors":"I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako, H. Hamada, T. Kosugi, M. Yaita, A. Moutaouakil, H. Matsuzaki, O. Kagami, T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara, D. Tsuji, K. Isono, S. Fujikawa, H. Fujishiro","doi":"10.1109/CSICS.2016.7751063","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751063","url":null,"abstract":"We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116611494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process 采用100nm GaN/Si工艺的6W Ka波段功率放大器和1.2dB NF x波段放大器
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI: 10.1109/CSICS.2016.7751009
R. Leblanc, Noelia Santos Ibeas, A. Gasmi, F. Auvray, J. Poulain, F. Lecourt, Gulnar Dagher, P. Frijlink
{"title":"6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process","authors":"R. Leblanc, Noelia Santos Ibeas, A. Gasmi, F. Auvray, J. Poulain, F. Lecourt, Gulnar Dagher, P. Frijlink","doi":"10.1109/CSICS.2016.7751009","DOIUrl":"https://doi.org/10.1109/CSICS.2016.7751009","url":null,"abstract":"This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first circuit is a 27-34 GHz power amplifier, presenting 6 W of output power in pulsed operation and 5.6 W in CW operation. The second circuit, using exactly the same process, is a 8-12 GHz Low Noise Amplifier presenting 1.3 dB noise figure from 11 to 13 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"580 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134305300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信