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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers最新文献

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An MMIC linearized amplifier using active feedback 采用有源反馈的MMIC线性化放大器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247464
J. Pedro, J. Perez
{"title":"An MMIC linearized amplifier using active feedback","authors":"J. Pedro, J. Perez","doi":"10.1109/MCS.1993.247464","DOIUrl":"https://doi.org/10.1109/MCS.1993.247464","url":null,"abstract":"A single 2.4-mm*2.4-mm MMIC (monolithic microwave integrated circuit) chip that includes an L-band tuned MESFET main amplifier and a nonlinear feedback path to improve its carrier-to-intermodulation margin (C/I) is discussed. The circuit uses the concept of amplifier intermodulation distortion (IMD) cancellation, in which a small-area MESFET-based linearizer is directly applied to the terminals of the main active device. The linearizer provides a 15-dB improvement of C/I, over a relative bandwidth of more than 12%.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127226564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A MMIC subharmonically pumped SSB modulator 一种MMIC次谐波抽运SSB调制器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247459
A. Pospishil, M. Russo, M. Singh
{"title":"A MMIC subharmonically pumped SSB modulator","authors":"A. Pospishil, M. Russo, M. Singh","doi":"10.1109/MCS.1993.247459","DOIUrl":"https://doi.org/10.1109/MCS.1993.247459","url":null,"abstract":"A monolithic single-sideband modulator (SSBM) which utilizes balanced subharmonically pumped mixers is discussed. This SSBM is pumped at one half of the carrier frequency (f/sub c//2). The typical measured performance of this device is excellent, with >40-dB carrier suppression, >25-dB undesired sideband suppression, and <10-dB conversion loss over a carrier bandwidth of 14 to 19 GHz. Double-sideband suppressed carrier (DSBSC) and unsuppressed carrier operation, are also achievable with the same device when appropriate modulation signals are applied.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123174915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance 展示了在同一PHEMT晶圆上制作的ka波段多功能MMIC电路的优越性能
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247468
A. Kurdoghlian, C.S. Win, W. Yarn, J. Chen, M. Hu, C. Pao, D. Bosch
{"title":"The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance","authors":"A. Kurdoghlian, C.S. Win, W. Yarn, J. Chen, M. Hu, C. Pao, D. Bosch","doi":"10.1109/MCS.1993.247468","DOIUrl":"https://doi.org/10.1109/MCS.1993.247468","url":null,"abstract":"The superior performance of Ka-band monolithic-microwave-integrated-circuits (MMIC) power and low-noise amplifiers (LNAs), both fabricated on the same wafer using delta doped AlGaAs-InGaAs-GaAs pseudomorphic high-electron-mobility transistor (PHEMT) technology is discussed. The balanced power amplifier exhibited an output power of 500 mK with 1 2-dB associated gain and a power-added efficiency of 32% over the 34- to 36-GHz frequency range. The LNA circuit demonstrated a noise figure of 3.5 dB with an associated gain of 17 dR over the 33- to 37-GHz frequency range. These circuits show that millimeter-wave multifunctional circuits can be fabricated on a single wafer without sacrificing individual circuit performance.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125496836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Picosecond MODFET IC pulse sharpener 皮秒MODFET IC脉冲锐化器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247472
M. Shakouri, A. Black, D. Bloom, J. Perdomo, H. Kondoh, Hugo Vifian
{"title":"Picosecond MODFET IC pulse sharpener","authors":"M. Shakouri, A. Black, D. Bloom, J. Perdomo, H. Kondoh, Hugo Vifian","doi":"10.1109/MCS.1993.247472","DOIUrl":"https://doi.org/10.1109/MCS.1993.247472","url":null,"abstract":"A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this technology for picosecond pulse-sharpening applications.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127045584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias 12 GHz低噪声MMIC放大器设计，其噪声模型可根据MODFET尺寸和偏置进行缩放
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247483
B. Hughes, I. Perdomo, H. Kondoh
{"title":"12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias","authors":"B. Hughes, I. Perdomo, H. Kondoh","doi":"10.1109/MCS.1993.247483","DOIUrl":"https://doi.org/10.1109/MCS.1993.247483","url":null,"abstract":"A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131299720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Low-noise, low DC power linear amplifiers 低噪声、低直流功率线性放大器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247454
P. Ikalainen, L. Witkowski, K. Varian
{"title":"Low-noise, low DC power linear amplifiers","authors":"P. Ikalainen, L. Witkowski, K. Varian","doi":"10.1109/MCS.1993.247454","DOIUrl":"https://doi.org/10.1109/MCS.1993.247454","url":null,"abstract":"Low-noise, low-DC-power linear amplifiers using high-dynamic-range GaAs/int FETs are discussed. Noise figures as low as dB have been achieved in a Ku-band amplifier simultaneously with over 36-dBm OIP3 and 18-dB gain with only 655 mW of DC power. A wideband distributed amplifier has shown average midband 7-dB gain and noise figure together with 37-dBm OIP3 with 800 mW of DC power. Greatly improved second-order intercept points (OIP2) have been observed in the distributed amplifier as compared to typical ion-implanted MESFET amplifiers. A dual-gate version, of the distributed amplifier demonstrated significant dynamic range advantages over its ion-implanted FET counterpart. Overall, state-of-the-art results in terms of simultaneous linearity, noise figure, gain-bandwidth, and DC power consumption have been achieved.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115158254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC 一种高度紧凑的宽带GaAs HEMT X-Ku波段图像抑制接收器MMIC
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247460
R. Katz, M. Aust, R. Kasody, H. Wang, B. Allen, G. Dow, K. Tan, S. Lin, R. Myers
{"title":"A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC","authors":"R. Katz, M. Aust, R. Kasody, H. Wang, B. Allen, G. Dow, K. Tan, S. Lin, R. Myers","doi":"10.1109/MCS.1993.247460","DOIUrl":"https://doi.org/10.1109/MCS.1993.247460","url":null,"abstract":"A fully integrated MMIC (monolithic microwave integrated circuit) receiver designed and fabricated using the 0.2- mu m pseudomorphic InGaAs-GaAs high-electron-mobility-transistor (HEMT) process technology is discussed. This MMIC receiver incorporates a single-stage RF amplifier, a two-staged balanced local oscillator (LO) amplifier, a single-stage IF amplifier, an IF switch and an image-reject diode mixer. Results from these receiver chips show good conversion gain and image rejection in a single small chip over multioctave frequencies. The chip operates from a single +5 V DC supply and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128378622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A low cost 77 GHz monolithic transmitter for automotive collision avoidance systems 用于汽车防撞系统的低成本77 GHz单片发射机
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247476
L. Raffaelli, E. Stewart, R. Quimby, J. Borelli, A. Geissberger, D. Palmieri
{"title":"A low cost 77 GHz monolithic transmitter for automotive collision avoidance systems","authors":"L. Raffaelli, E. Stewart, R. Quimby, J. Borelli, A. Geissberger, D. Palmieri","doi":"10.1109/MCS.1993.247476","DOIUrl":"https://doi.org/10.1109/MCS.1993.247476","url":null,"abstract":"The design, integration and testing of a 77-GHz GaAs monolithic transmitter specifically optimized for low-cost, large-volume automotive collision avoidance systems are reported. Greater than +15 dBm of output power has been achieved at the output waveguide interface across a 1-GHz bandwidth using monolithic chips exclusively. This module, due to its small size, light weight and low production cost, is a significant advance in MM-wave technology from traditional waveguide hybrid approaches and it now makes collision avoidance radars affordable.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124626497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A 20-50 GHz MMIC amplifier with 21 dBm output power and its application as a frequency doubler 输出功率为21 dBm的20-50 GHz MMIC放大器及其倍频应用
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247482
H. Kondoh, A. Cognata
{"title":"A 20-50 GHz MMIC amplifier with 21 dBm output power and its application as a frequency doubler","authors":"H. Kondoh, A. Cognata","doi":"10.1109/MCS.1993.247482","DOIUrl":"https://doi.org/10.1109/MCS.1993.247482","url":null,"abstract":"A 20-50-GHz MMIC amplifier, designed on a 0.25- mu m-gate PMODFET production IC process that exhibits a 13+or-1.8 dB gain with greater than 21-dBm saturated output power across the band is discussed. A traveling-wave-input power-combined-output configuration developed for the input stage design facilitates area-efficient broadband impedance matching and also permits the amplifier to operate as a frequency doubler. More than 10-dBm output power is achieved over the 20-50-GHz doubled frequency band for 20-dBm input power.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125896592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A fully integrated 35 GHz MMIC receiver with on-chip LO 一个完全集成的35 GHz MMIC接收器，带有片上LO
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247469
R. Ramachandran, C. Woo, M. Nijjar, D. Fisher
{"title":"A fully integrated 35 GHz MMIC receiver with on-chip LO","authors":"R. Ramachandran, C. Woo, M. Nijjar, D. Fisher","doi":"10.1109/MCS.1993.247469","DOIUrl":"https://doi.org/10.1109/MCS.1993.247469","url":null,"abstract":"A monolithic-microwave-integrated-circuit (MMIC) receiver chip containing a low-noise amplifier (LNA), an active mixer, an IF amplifier, a local oscillator, and a buffer amplifier is described. The only external component required is the resonator. This feature was incorporated to accommodate both dielectric-resonator oscillator (DRO) and voltage-controlled oscillator (VCO) implementation. Chip size is 54 mils*80 mils (1.35mm *2 mm). The MMIC chip exhibits a conversion gain of 17 +or-2 dB across the 33- to 37-GHz band with a peak gain of 19 dB at 34 GHz. IF bandwidth extends from 100 MHz to over 2 GHz and the noise figure (DSB) is 9 dB. When assembled with a varactor, the local oscillator has a tuning bandwidth of over 4 GHz. The entire chip draws 55 mA from a single +8-V supply.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"336 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122748830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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