The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance

Abstract

The superior performance of Ka-band monolithic-microwave-integrated-circuits (MMIC) power and low-noise amplifiers (LNAs), both fabricated on the same wafer using delta doped AlGaAs-InGaAs-GaAs pseudomorphic high-electron-mobility transistor (PHEMT) technology is discussed. The balanced power amplifier exhibited an output power of 500 mK with 1 2-dB associated gain and a power-added efficiency of 32% over the 34- to 36-GHz frequency range. The LNA circuit demonstrated a noise figure of 3.5 dB with an associated gain of 17 dR over the 33- to 37-GHz frequency range. These circuits show that millimeter-wave multifunctional circuits can be fabricated on a single wafer without sacrificing individual circuit performance.<>