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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers最新文献

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Low voltage, high power T/R switch MMIC using LC resonators 低电压，高功率T/R开关MMIC使用LC谐振器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247484
T. Tokumitsu, I. Toyoda, M. Aikawa
{"title":"Low voltage, high power T/R switch MMIC using LC resonators","authors":"T. Tokumitsu, I. Toyoda, M. Aikawa","doi":"10.1109/MCS.1993.247484","DOIUrl":"https://doi.org/10.1109/MCS.1993.247484","url":null,"abstract":"A T/R (transmit/receive) MMIC (monolithic microwave integrated circuit) switch for high-power/low-distortion operation at low control voltage is proposed. LC-resonant switches composed of inductors, capacitors, and switching FETs are incorporated in the TX and RX arms to provide a reverse control scheme which removes the RF voltage limitation in the transmit mode. An LC-resonant T/R switch with total periphery of 2.88 mm exhibits third IMR less than -40 dB for input power up to 28 dBm when controlled at 0 V/2 V.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123482206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
A new compact wideband balun 一种新型紧凑型宽带平衡器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247462
M. Tsai
{"title":"A new compact wideband balun","authors":"M. Tsai","doi":"10.1109/MCS.1993.247462","DOIUrl":"https://doi.org/10.1109/MCS.1993.247462","url":null,"abstract":"A wideband balun developed for MMIC (monolithic microwave integrated circuit) applications is discussed. The approach utilizes simple RF reflection and coupling principles to achieve a wideband performance in a simple microstrip configuration. A balun with better than 2 dB of insertion loss, 1 dB and 5 degrees of amplitude and phase balance over 7 to 19 GHz has been realized.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122807072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 80
Low noise wideband fiberoptic MMIC-based receiver 基于mmic的低噪声宽带光纤接收机
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247474
R. Khairandish, C. M. Gee, J. Paslaski, D. Huff
{"title":"Low noise wideband fiberoptic MMIC-based receiver","authors":"R. Khairandish, C. M. Gee, J. Paslaski, D. Huff","doi":"10.1109/MCS.1993.247474","DOIUrl":"https://doi.org/10.1109/MCS.1993.247474","url":null,"abstract":"A low-noise, wideband, fiber-optic monolithic-microwave-integrated-circuit (MMIC)-based receiver consisting of a two-stage feedback amplifier with minimum gain of 10 dB and 5 dB maximum noise figure from 6 to 15 Hz is presented. This bandwidth and noise performance represent a significant improvement over available hybrid designs. The receiver is usable up to 17 GHz. The improved RF performance is obtained by flip-chip mounting a photodiode onto the MMIC chip, which minimizes the parasitics. thereby extending bandwidth and improving noise.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120914565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The inductive connection effects of a mounted SPDT in a plastic SO8 package 在SO8塑料封装中安装SPDT的感应连接效果
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247465
F. Ndagijimana, J. Engdahl, A. Ahmadouche, J. Chilo
{"title":"The inductive connection effects of a mounted SPDT in a plastic SO8 package","authors":"F. Ndagijimana, J. Engdahl, A. Ahmadouche, J. Chilo","doi":"10.1109/MCS.1993.247465","DOIUrl":"https://doi.org/10.1109/MCS.1993.247465","url":null,"abstract":"An investigation of the electrical performance of an assembled SO8 package with a single-pole, double-throw (SPDT) switch is presented. Using an equivalent electric network for the whole assembly, the isolation and the insertion losses are computed for a signal frequency up to 5 GHz. From the modeling and simulation results, a significant effect of the path connection to ground is shown, and the required modifications of the connecting layout are discussed. The modeling concept is applicable to any single-chip package.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133916029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A highly integrated MMIC K-band transmit/receive chip 一个高度集成的MMIC k波段收发芯片
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247463
H. Fudem, S. Moghe, G. Diets, S. Consolazio
{"title":"A highly integrated MMIC K-band transmit/receive chip","authors":"H. Fudem, S. Moghe, G. Diets, S. Consolazio","doi":"10.1109/MCS.1993.247463","DOIUrl":"https://doi.org/10.1109/MCS.1993.247463","url":null,"abstract":"A highly integrated, wideband, monolithic-microwave-integrated-circuit (MMIC) transmit/receive (T/R) chip designed for both commercial and military FM CW applications is discussed. The MMIC circuit was designed using 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) technology. The T/R chip has three three-stage amplifiers, an active power divide, a diode double-balanced mixer and a voltage-controlled oscillator (VCO), all integrated on a single chip 96 mils*71 mils (2.4 mm *1.8 mm) in size.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132847601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Passive FET MMIC linearizers for C, X and Ku-band satellite-applications 用于C, X和ku波段卫星应用的无源场效应管MMIC线性器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247455
A. Katz, S. Moochalla, J. Klatskin
{"title":"Passive FET MMIC linearizers for C, X and Ku-band satellite-applications","authors":"A. Katz, S. Moochalla, J. Klatskin","doi":"10.1109/MCS.1993.247455","DOIUrl":"https://doi.org/10.1109/MCS.1993.247455","url":null,"abstract":"The design and measured performance of GaAs monolithic-microwave-integrated circuit (MMIC) linearizers for use with spaceborne traveling-wave-tube amplifiers (TWTAs) are presented. The linearizers operate at C-, X- and Ku-band and are believed the first to be realized in MMIC form. They are based on a passive FET design similar to that of MMIC switches and attenuators. MESFET varactors and voltage variable resistors are used as control elements. They provide more than 2.5 GHz of bandwidth at Ku-band with an improvement of greater than 10 dB in TWTA carrier-to-intermodulation ratio (C/I), and with a phase change of less than 5 degrees .<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117342667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA 高性能q波段0.15 μ m InGaAs HEMT MMIC LNA
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247467
K. Duh, S. Liu, S.C. Wang, P. Ho, P. Chao
{"title":"High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA","authors":"K. Duh, S. Liu, S.C. Wang, P. Ho, P. Chao","doi":"10.1109/MCS.1993.247467","DOIUrl":"https://doi.org/10.1109/MCS.1993.247467","url":null,"abstract":"A monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed. The amplifier exhibits state-of-the-art low noise and gain performance at Q-band frequencies. It exhibits 22 dB of gain with 3-dB noise figure from 41 to 45 GHz. From 35 to 50 GHz, it has a flat gain response of over 22 dB gain across the Q-band range. The amplifier uses 0.15- mu m-gate-length GaAs-based pseudomorphic HEMTs with on-chip matching circuits and bias circuits. The chip size is 2.3 mm*1.0 mm.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126161302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A coplanar millimeterwave resonator on silicon 硅基共面毫米波谐振器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247477
S. Sattler, T. Felgentreff, P. Russer
{"title":"A coplanar millimeterwave resonator on silicon","authors":"S. Sattler, T. Felgentreff, P. Russer","doi":"10.1109/MCS.1993.247477","DOIUrl":"https://doi.org/10.1109/MCS.1993.247477","url":null,"abstract":"A coplanar waveguide (CPW) resonator built with a completely coplanar technique on a grounded silicon substrate is discussed. The input impedance is investigated experimentally and numerically. The passive planar structure is extensively studied using a space-domain full-wave analysis method. The resonator is fed by a coplanar transmission line through a capacitive gap and shows a marked resonance at the fundamental coplanar waveguide mode. Calculated and measured data agree to better than 5%.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"21 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123552231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone 1.9 GHz日本数字无绳电话用高效AlGaAs/GaAs HBT功率放大器MMIC
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247486
S. Hara, H. Sato, J. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yoshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita
{"title":"High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone","authors":"S. Hara, H. Sato, J. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yoshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita","doi":"10.1109/MCS.1993.247486","DOIUrl":"https://doi.org/10.1109/MCS.1993.247486","url":null,"abstract":"A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126405476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A monolithic W-band preamplified diode detector 单片w波段预放大二极管检测器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247452
H. Wang, W. Lam, T. Ton, D. Lo, K. Tan, G. Dow, B. Allen, J. Berenz
{"title":"A monolithic W-band preamplified diode detector","authors":"H. Wang, W. Lam, T. Ton, D. Lo, K. Tan, G. Dow, B. Allen, J. Berenz","doi":"10.1109/MCS.1993.247452","DOIUrl":"https://doi.org/10.1109/MCS.1993.247452","url":null,"abstract":"A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs-InGaAs-GaAs high-electron-mobility-transistor (HEMT) technology is discussed. This chip, consisting of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA), has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic preamplified diode detector at this frequency. A higher sensitivity preamplified detector which was built by cascading two monolithic three-stage W-band LNAs with the preamplified detector chip also shows a tangential sensitivity of -85 dBm. This monolithic chip is ideal for insertion into W-band radiometer and passive imaging array systems.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127880573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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