High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA

Abstract

A monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed. The amplifier exhibits state-of-the-art low noise and gain performance at Q-band frequencies. It exhibits 22 dB of gain with 3-dB noise figure from 41 to 45 GHz. From 35 to 50 GHz, it has a flat gain response of over 22 dB gain across the Q-band range. The amplifier uses 0.15- mu m-gate-length GaAs-based pseudomorphic HEMTs with on-chip matching circuits and bias circuits. The chip size is 2.3 mm*1.0 mm.<>