S. Hara, H. Sato, J. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yoshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita
{"title":"1.9 GHz日本数字无绳电话用高效AlGaAs/GaAs HBT功率放大器MMIC","authors":"S. Hara, H. Sato, J. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yoshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita","doi":"10.1109/MCS.1993.247486","DOIUrl":null,"url":null,"abstract":"A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone\",\"authors\":\"S. Hara, H. Sato, J. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yoshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita\",\"doi\":\"10.1109/MCS.1993.247486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone
A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
