高性能q波段0.15 μ m InGaAs HEMT MMIC LNA

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247467

K. Duh, S. Liu, S.C. Wang, P. Ho, P. Chao

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引用次数: 6

摘要

讨论了单片三级假晶InGaAs高电子迁移率晶体管(HEMT)低噪声放大器。该放大器在q波段频率上具有最先进的低噪声和增益性能。在41 - 45 GHz范围内，增益为22 dB，噪声系数为3 dB。从35到50 GHz，它在整个q波段范围内具有超过22 dB增益的平坦增益响应。放大器采用0.15 μ m门长gaas基伪晶hemt，带有片上匹配电路和偏置电路。芯片尺寸为2.3 mm*1.0 mm。

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High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA

A monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed. The amplifier exhibits state-of-the-art low noise and gain performance at Q-band frequencies. It exhibits 22 dB of gain with 3-dB noise figure from 41 to 45 GHz. From 35 to 50 GHz, it has a flat gain response of over 22 dB gain across the Q-band range. The amplifier uses 0.15- mu m-gate-length GaAs-based pseudomorphic HEMTs with on-chip matching circuits and bias circuits. The chip size is 2.3 mm*1.0 mm.<>

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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