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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers最新文献

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Monolithic image rejection optoelectronic up-converters that employ the MMIC process 采用MMIC工艺的单片图像抑制光电上转换器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247473
H. Kamitsuna, H. Ogawa
{"title":"Monolithic image rejection optoelectronic up-converters that employ the MMIC process","authors":"H. Kamitsuna, H. Ogawa","doi":"10.1109/MCS.1993.247473","DOIUrl":"https://doi.org/10.1109/MCS.1993.247473","url":null,"abstract":"Very small 30-GHz-band monolithic image rejection optoelectronic up-converters that employ the high-electron-mobility-transistor (HEMT)-monolithic microwave-integrated circuit (MMIC) process are discussed. An in-phase divider and a branch-line hybrid with two HEMT optoelectronic mixers are successfully integrated in an MMIC chip area of 1.5 mm*1.1 mm. Fundamental performance results are reported, and excellent wideband performance, which comes from the well balanced operation of monolithic integrated circuits, is confirmed.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129154240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications 小型化低噪声可变MMIC放大器，低功耗，适用于l波段便携式通信应用
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247475
S. Hara, K. Osato, A. Yamada, T. Tsukao, T. Yoshimasu
{"title":"Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications","authors":"S. Hara, K. Osato, A. Yamada, T. Tsukao, T. Yoshimasu","doi":"10.1109/MCS.1993.247475","DOIUrl":"https://doi.org/10.1109/MCS.1993.247475","url":null,"abstract":"Miniaturized L-band low-noise variable gain amplifiers for portable mobile communication equipment applications are discussed. The fabricated monolithic microwave integrated circuits (MMICs) use D-mode GaAs MESFETs and need only positive bias. The amplifier has a noise figure of 3 dB and a gain of 14 dB. The chip size is approximately 1 mm*1 mm and the current dissipation is only 1.8 mA.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132409378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
GaAs HBT PIN diode attenuators and switches GaAs HBT PIN二极管衰减器和开关
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247456
K. Kobayashi, A. Oki, D. Umemoto, S. Claxton, D. Streit
{"title":"GaAs HBT PIN diode attenuators and switches","authors":"K. Kobayashi, A. Oki, D. Umemoto, S. Claxton, D. Streit","doi":"10.1109/MCS.1993.247456","DOIUrl":"https://doi.org/10.1109/MCS.1993.247456","url":null,"abstract":"An AlGaAs-GaAs heterojunction-bipolar-transistor (HBT) two-stage PIN diode attenuator from 1-10 GHz and an X-band one-pole, two-throw PIN diode switch are discussed. The two-stage PIN attenuator has over 50-dB dynamic range at 2 GHz and a maximum IP3 of 9 dBm. The minimum insertion loss is 1.7 dB per stage, and response is flat to 10 GHz. The X-band switch has an insertion loss of 0.82 dB and an off-isolation of 25 dB. The bandwidth is greater than 35% and the IP3 is greater than 34.5 dBm. Both of these circuits consist of PIN diodes constructed from the base-collector molecular-beam-epitaxy (MBE) layers of a baseline HBT process. The monolithic integration of PIN diode switch and attenuation functions in an HBT technology without additional process or MBE material growth is shown.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126699609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Narrow-band MMIC filters with automatic tuning and Q-factor control 窄带MMIC滤波器与自动调谐和q因子控制
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247458
P. Katzin, B. Bedard, Y. Ayasli
{"title":"Narrow-band MMIC filters with automatic tuning and Q-factor control","authors":"P. Katzin, B. Bedard, Y. Ayasli","doi":"10.1109/MCS.1993.247458","DOIUrl":"https://doi.org/10.1109/MCS.1993.247458","url":null,"abstract":"Narrowband, active monolithic-microwave-integrated-circuit (MMIC) filters at X-band are discussed. Results for both bandpass and notch circuits fabricated using standard GaAs MESFET processes are presented. A novel master-slave control circuit provides compensation for fluctuations in the fabrication process and operating temperature, and it enables the filter to accurately track a reference signal.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124340648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
A high performance 1.5 dB low noise GaAss PHEMT MMIC amplifier for low cost 1.5-8 GHz commercial applications 一款高性能1.5 dB低噪声GaAss PHEMT MMIC放大器，适用于低成本1.5-8 GHz商业应用
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247487
H. Morkner, M. Frank, D. Millicker
{"title":"A high performance 1.5 dB low noise GaAss PHEMT MMIC amplifier for low cost 1.5-8 GHz commercial applications","authors":"H. Morkner, M. Frank, D. Millicker","doi":"10.1109/MCS.1993.247487","DOIUrl":"https://doi.org/10.1109/MCS.1993.247487","url":null,"abstract":"State-of-the-art 0.15- mu m-gate PHEMT (pseudomorphic high-electron-mobility transistor) devices, self-biasing current sources, source follower interstage, resistive feedback, and on-chip matching have been used to make an unique MMIC (monolithic microwave integrated circuit) LNA (low noise amplifier). Typical gain of 21 dB, VSWR (voltage standing wave ratio) of 2:1, and P-1-dB output power of 7 dBm have been measured. The die area is small (0.40 mm/sup 2/) and is compatible with surface mount packages. DC power requirements are low, consuming only 14 mA from a single +5-V supply. This MMIC LNA has the best combination of noise figure, gain. low current, match, wide bandwidth, and low cost of any advertised or published product known to the authors to date.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121862230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Present and future of mobile communications in Japan 日本移动通信的现状与未来
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247489
M. Morishima
{"title":"Present and future of mobile communications in Japan","authors":"M. Morishima","doi":"10.1109/MCS.1993.247489","DOIUrl":"https://doi.org/10.1109/MCS.1993.247489","url":null,"abstract":"In Japan, mobile communication subscribers have been increasing rapidly, especially in the area of cellular telephones, radio paging, trunked system (called MCA) and cordless telephones. The digital cellular service was due to go into operation in the spring of 1993. The digital cordless telephone, digital trunked system end future public land mobile telecommunication system (FPLMTS) are considered. The author describes the following items; (1) mobile communication services in Japan; (2) personal mobile communications; and (3) future mobile communication terminals.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132566142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Ka-band HEMT MMIC 1 watt power amplifier 一个ka波段HEMT MMIC 1瓦功率放大器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247480
M. Aust, B. Allen, G. Dow, R. Kasody, G. Luong, M. Biedenbender, K. Tan
{"title":"A Ka-band HEMT MMIC 1 watt power amplifier","authors":"M. Aust, B. Allen, G. Dow, R. Kasody, G. Luong, M. Biedenbender, K. Tan","doi":"10.1109/MCS.1993.247480","DOIUrl":"https://doi.org/10.1109/MCS.1993.247480","url":null,"abstract":"A 34-36-GHz, 1-W, 9-dB-gain monolithic microwave integrated circuit (MMIC) power amplifier which utilizes 0.15- mu m pseudomorphic InGaAs-GaAs high-electron-mobility transistor (HEMT) process technology is discussed. Power amplifier sites across the wafer were fully characterized with an on-wafer pulsed large-signal S-parameter test set. Test results from these amplifier chips showed output powers >30 dBm, with >9-dB gain, and power-added efficiencies >20%. Overall chip size is 4.8 mm*2.3 mm. A two-stage power amplifier module using one chip to drive three chips has been developed. The resulting amplifier module has achieved 3-W output power and 17-dB gain from 34-36 GHz.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132967225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
A W-band single-chip transceiver for FMCW radar 一种用于FMCW雷达的w波段单片收发器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247481
K. Chang, G. Dow, H. Wang, T.N. Chen, K. Tan, B. Allen, I. Berenz, J. Wehling, R. Lin
{"title":"A W-band single-chip transceiver for FMCW radar","authors":"K. Chang, G. Dow, H. Wang, T.N. Chen, K. Tan, B. Allen, I. Berenz, J. Wehling, R. Lin","doi":"10.1109/MCS.1993.247481","DOIUrl":"https://doi.org/10.1109/MCS.1993.247481","url":null,"abstract":"A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. The transmitter output power is more than 10 dBm for frequencies in the range 90-94 GHz, and maximum tuning bandwidth is 500 MHz for the VO. The receiver channel has 6-dB conversion gain when the output transmitting power is 10 dBm. A compete radar system has been tested based on the single-chip MMIC front-end. The calculated range and range rate are in good agreement with the measurement data.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124839947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
Rigorous design of a 94 GHz MMIC doubler 严格的94 GHz MMIC倍频器设计
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247470
S. Chen, T. Ho, F. Phelleps, J. Singer, K. Pande, P. Rice, J. Adair, M. Ghahremani
{"title":"Rigorous design of a 94 GHz MMIC doubler","authors":"S. Chen, T. Ho, F. Phelleps, J. Singer, K. Pande, P. Rice, J. Adair, M. Ghahremani","doi":"10.1109/MCS.1993.247470","DOIUrl":"https://doi.org/10.1109/MCS.1993.247470","url":null,"abstract":"A 94-GHz monolithic microwave integrated circuit (MMIC) frequency doubler with 25% efficiency and 65 mW output power is discussed. Variation in the diodes performance as a doubler with its geometry and doping profile are analyzed for optimum efficiency and output power. Optimum doubler performance is obtained by use of the optimized diode parameters resulting from this analysis. Measured results of the diode parameters as well as doubler response show excellent agreement with the analysis. The doubler exhibits better performance than those reported in the literature at similar frequencies using an MMIC approach.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127393938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A broadband, planar, doubly balanced monolithic Ka-band diode mixer 宽带，平面，双平衡单片ka波段二极管混频器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247478
S. Maas, K. Chang
{"title":"A broadband, planar, doubly balanced monolithic Ka-band diode mixer","authors":"S. Maas, K. Chang","doi":"10.1109/MCS.1993.247478","DOIUrl":"https://doi.org/10.1109/MCS.1993.247478","url":null,"abstract":"A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-10-GHz IF is described. The diodes are the gate-to-channel junctions of 0.2- mu m*80- mu m InGaAs HEMTs, and the baluns are Marchand-like coplanar structures.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115204664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 95
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