小型化低噪声可变MMIC放大器，低功耗，适用于l波段便携式通信应用

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247475

S. Hara, K. Osato, A. Yamada, T. Tsukao, T. Yoshimasu

{"title":"小型化低噪声可变MMIC放大器，低功耗，适用于l波段便携式通信应用","authors":"S. Hara, K. Osato, A. Yamada, T. Tsukao, T. Yoshimasu","doi":"10.1109/MCS.1993.247475","DOIUrl":null,"url":null,"abstract":"Miniaturized L-band low-noise variable gain amplifiers for portable mobile communication equipment applications are discussed. The fabricated monolithic microwave integrated circuits (MMICs) use D-mode GaAs MESFETs and need only positive bias. The amplifier has a noise figure of 3 dB and a gain of 14 dB. The chip size is approximately 1 mm*1 mm and the current dissipation is only 1.8 mA.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications\",\"authors\":\"S. Hara, K. Osato, A. Yamada, T. Tsukao, T. Yoshimasu\",\"doi\":\"10.1109/MCS.1993.247475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Miniaturized L-band low-noise variable gain amplifiers for portable mobile communication equipment applications are discussed. The fabricated monolithic microwave integrated circuits (MMICs) use D-mode GaAs MESFETs and need only positive bias. The amplifier has a noise figure of 3 dB and a gain of 14 dB. The chip size is approximately 1 mm*1 mm and the current dissipation is only 1.8 mA.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 21

摘要

讨论了用于便携式移动通信设备的小型化l波段低噪声变增益放大器。制备的单片微波集成电路(mmic)使用d模GaAs mesfet，只需要正偏置。该放大器的噪声系数为3db，增益为14db。芯片尺寸约为1mm * 1mm，电流损耗仅为1.8 mA。

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Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications

Miniaturized L-band low-noise variable gain amplifiers for portable mobile communication equipment applications are discussed. The fabricated monolithic microwave integrated circuits (MMICs) use D-mode GaAs MESFETs and need only positive bias. The amplifier has a noise figure of 3 dB and a gain of 14 dB. The chip size is approximately 1 mm*1 mm and the current dissipation is only 1.8 mA.<>

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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