A Ka-band HEMT MMIC 1 watt power amplifier

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247480

M. Aust, B. Allen, G. Dow, R. Kasody, G. Luong, M. Biedenbender, K. Tan

引用次数: 29

Abstract

A 34-36-GHz, 1-W, 9-dB-gain monolithic microwave integrated circuit (MMIC) power amplifier which utilizes 0.15- mu m pseudomorphic InGaAs-GaAs high-electron-mobility transistor (HEMT) process technology is discussed. Power amplifier sites across the wafer were fully characterized with an on-wafer pulsed large-signal S-parameter test set. Test results from these amplifier chips showed output powers >30 dBm, with >9-dB gain, and power-added efficiencies >20%. Overall chip size is 4.8 mm*2.3 mm. A two-stage power amplifier module using one chip to drive three chips has been developed. The resulting amplifier module has achieved 3-W output power and 17-dB gain from 34-36 GHz.<>

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一个ka波段HEMT MMIC 1瓦功率放大器

讨论了一种采用0.15 μ m假晶InGaAs-GaAs高电子迁移率晶体管(HEMT)工艺技术的34-36 ghz、1 w、9 db增益的单片微波集成电路(MMIC)功率放大器。通过晶圆上脉冲大信号s参数测试集，对整个晶圆上的功率放大器位置进行了全面表征。这些放大器芯片的测试结果显示，输出功率>30 dBm，增益>9 db，功率增加效率>20%。整体芯片尺寸为4.8 mm*2.3 mm。研制了一种单芯片驱动三芯片的两级功率放大器模块。由此产生的放大器模块在34-36 GHz范围内实现了3 w输出功率和17 db增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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