Monolithic image rejection optoelectronic up-converters that employ the MMIC process

Abstract

Very small 30-GHz-band monolithic image rejection optoelectronic up-converters that employ the high-electron-mobility-transistor (HEMT)-monolithic microwave-integrated circuit (MMIC) process are discussed. An in-phase divider and a branch-line hybrid with two HEMT optoelectronic mixers are successfully integrated in an MMIC chip area of 1.5 mm*1.1 mm. Fundamental performance results are reported, and excellent wideband performance, which comes from the well balanced operation of monolithic integrated circuits, is confirmed.<>