K. Chang, G. Dow, H. Wang, T.N. Chen, K. Tan, B. Allen, I. Berenz, J. Wehling, R. Lin
{"title":"一种用于FMCW雷达的w波段单片收发器","authors":"K. Chang, G. Dow, H. Wang, T.N. Chen, K. Tan, B. Allen, I. Berenz, J. Wehling, R. Lin","doi":"10.1109/MCS.1993.247481","DOIUrl":null,"url":null,"abstract":"A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. The transmitter output power is more than 10 dBm for frequencies in the range 90-94 GHz, and maximum tuning bandwidth is 500 MHz for the VO. The receiver channel has 6-dB conversion gain when the output transmitting power is 10 dBm. A compete radar system has been tested based on the single-chip MMIC front-end. The calculated range and range rate are in good agreement with the measurement data.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"52","resultStr":"{\"title\":\"A W-band single-chip transceiver for FMCW radar\",\"authors\":\"K. Chang, G. Dow, H. Wang, T.N. Chen, K. Tan, B. Allen, I. Berenz, J. Wehling, R. Lin\",\"doi\":\"10.1109/MCS.1993.247481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. The transmitter output power is more than 10 dBm for frequencies in the range 90-94 GHz, and maximum tuning bandwidth is 500 MHz for the VO. The receiver channel has 6-dB conversion gain when the output transmitting power is 10 dBm. A compete radar system has been tested based on the single-chip MMIC front-end. The calculated range and range rate are in good agreement with the measurement data.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"52\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process technology. The transmitter output power is more than 10 dBm for frequencies in the range 90-94 GHz, and maximum tuning bandwidth is 500 MHz for the VO. The receiver channel has 6-dB conversion gain when the output transmitting power is 10 dBm. A compete radar system has been tested based on the single-chip MMIC front-end. The calculated range and range rate are in good agreement with the measurement data.<>