采用MMIC工艺的单片图像抑制光电上转换器

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247473

H. Kamitsuna, H. Ogawa

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引用次数: 20

摘要

讨论了采用高电子迁移率晶体管(HEMT)-单片微波集成电路(MMIC)工艺的非常小的30 ghz波段单片图像抑制光电上转换器。在1.5 mm*1.1 mm的MMIC芯片面积上成功集成了一个同相分频器和一个带有两个HEMT光电混频器的支路混合器。报告了基本性能结果，并证实了良好的宽带性能，这源于单片集成电路的良好平衡运行

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Monolithic image rejection optoelectronic up-converters that employ the MMIC process

Very small 30-GHz-band monolithic image rejection optoelectronic up-converters that employ the high-electron-mobility-transistor (HEMT)-monolithic microwave-integrated circuit (MMIC) process are discussed. An in-phase divider and a branch-line hybrid with two HEMT optoelectronic mixers are successfully integrated in an MMIC chip area of 1.5 mm*1.1 mm. Fundamental performance results are reported, and excellent wideband performance, which comes from the well balanced operation of monolithic integrated circuits, is confirmed.<>

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来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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