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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers最新文献

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A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier 高效率的7瓦16 GHz单片伪晶HEMT放大器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247466
H. Tserng, P. Saunier
{"title":"A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier","authors":"H. Tserng, P. Saunier","doi":"10.1109/MCS.1993.247466","DOIUrl":"https://doi.org/10.1109/MCS.1993.247466","url":null,"abstract":"The achievement of a record CW output power of 7 W with 4.5-dB gain and 30.8% power-added efficiency with a monolithic, single-stage, 0.25 mu m*12-mm AlGaAs-InGaAs pseudomorphic high-electron-mobility-transistor (HEMT) amplifier at 16.3 GHz is discussed. At 5-W output, the power-added efficiency is 35% with 6-dB power gain. The chip size is 3 mm*3.5 mm.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122630069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A new circuit structure for microwave frequency doublers 微波倍频器的一种新型电路结构
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247457
J. Fikart, Y. Xuan
{"title":"A new circuit structure for microwave frequency doublers","authors":"J. Fikart, Y. Xuan","doi":"10.1109/MCS.1993.247457","DOIUrl":"https://doi.org/10.1109/MCS.1993.247457","url":null,"abstract":"A circuit structure for microwave frequency doublers which features effective suppression of fundamental and odd harmonics (>50 dB), conversion gain (>3 dB) and simplicity of the circuit is presented. Either a balanced or unbalanced configuration can be selected at the output without requiring baluns or transformers, thereby reducing the loss and simplifying the circuit. Nonlinear computer simulation was carried out during the design of a monolithic-microwave-integrated-circuit (MMIC) doubler using the present circuit configuration. Very good performance was predicted and verified by experimental results.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125256984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An MMIC twin-tee active bandpass filter MMIC双三通有源带通滤波器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247453
F. Rosenbaum, R. Gregory, W. Richard, W. Ou, F.G. Kuhns, T. Trimble
{"title":"An MMIC twin-tee active bandpass filter","authors":"F. Rosenbaum, R. Gregory, W. Richard, W. Ou, F.G. Kuhns, T. Trimble","doi":"10.1109/MCS.1993.247453","DOIUrl":"https://doi.org/10.1109/MCS.1993.247453","url":null,"abstract":"The design and performance of an MMIC (monolithic microwave integrated circuit) active bandpass filter based on a twin-tee notch circuit are described. Design goals included a center frequency of 2 GHz and a Q that could be varied to well over 100. The device was fabricated in GaAs using 150- mu m transistors. Die size is approximately 1 mm/sup 2/, and power dissipation is approximately 180 mW. Although Q values meet expectations, the measured center frequency is low.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126637915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultra low impedance CPW transmission lines for multilayer MMICs 多层mmic用超低阻抗CPW传输线
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247461
M. Gillick, I. Robertson
{"title":"Ultra low impedance CPW transmission lines for multilayer MMICs","authors":"M. Gillick, I. Robertson","doi":"10.1109/MCS.1993.247461","DOIUrl":"https://doi.org/10.1109/MCS.1993.247461","url":null,"abstract":"A technique for realizing low-loss coplanar waveguide (CPW) transmission lines with ultralow characteristic impedance on multilayer monolithic microwave integrated circuits (MMICs) is presented. The performance of these CPW lines is investigated experimentally with either (a) ground planes extended under the signal conductor or (b) the center conductor extended underneath the ground planes. Using this technique, characteristic impedances as low as 7 Omega have been realized. The technique has been compared extensively with the proven standard thin-film microstrip transmission line. The TFMS technique can be used for lines with characteristic impedance as low as 3.6 Omega but is found here to be significantly more lossy.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124688525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
InP based HBT millimeter-wave technology and circuit performance to 40 GHz 基于InP的HBT毫米波技术和电路性能达到40ghz
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247471
K. Kobayashi, L. Tran, S. Bui, J. Velebir, D. Nguyen, A. Oki, D. Streit
{"title":"InP based HBT millimeter-wave technology and circuit performance to 40 GHz","authors":"K. Kobayashi, L. Tran, S. Bui, J. Velebir, D. Nguyen, A. Oki, D. Streit","doi":"10.1109/MCS.1993.247471","DOIUrl":"https://doi.org/10.1109/MCS.1993.247471","url":null,"abstract":"InP-based heterojunction bipolar transistor (HBT) millimeter-wave amplifiers and oscillators designed in a microstrip environment and working up to 40 GHz are discussed. A 20-40-GHz balanced high-intercept amplifier and a 30-GHz voltage-controlled oscillator (VCO) have been successfully fabricated and tested. These circuits benchmark the first InP HBT microstrip designs at K-a-band frequencies. The high-intercept amplifier achieves a gain of 5 dB and an IP3 of 20 dBm at 35 GHz. The monolithic VCO uses a base emitter varactor diode to tune as high as 9% bandwidth from a nominal oscillation frequency of 30 GHz. The output power is invariant of VCO tuning and is about +9.9 dBm+or-0.5 dBm. The collector efficiency is 21%. The total power dissipation is 77 mW. These demonstration circuits show the great potential of HBTs in millimeter-wave communication systems.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133481935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
GaAs JFET front-end MMICs for L-band personal communications 用于l波段个人通信的GaAs JFET前端mmic
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247488
T. Ohgihara, S. Kusunoki, M. Wada, Y. Murakami
{"title":"GaAs JFET front-end MMICs for L-band personal communications","authors":"T. Ohgihara, S. Kusunoki, M. Wada, Y. Murakami","doi":"10.1109/MCS.1993.247488","DOIUrl":"https://doi.org/10.1109/MCS.1993.247488","url":null,"abstract":"The development of GaAs JFET (junction field-effect transistor) low noise and low distortion amplifier and mixer MMICs (monolithic microwave integrated circuits) for front-end use in L-band personal communications is discussed. These MMICs can be operated by a 3.0-V single biasing supply with a very low current dissipation of 4.0 mA. In order to achieve excellent low intermodulation distortion, a current-mirror active biasing circuit using enhancement-mode JFETs and a resistive mixing configuration have been realized.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"25 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132286011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A 2.4 GHz single chip transceiver 2.4 GHz单片收发器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI: 10.1109/MCS.1993.247485
L. Devlin, B. J. Buck, J. C. Clifton, A. Dearn, A.P.O. Long
{"title":"A 2.4 GHz single chip transceiver","authors":"L. Devlin, B. J. Buck, J. C. Clifton, A. Dearn, A.P.O. Long","doi":"10.1109/MCS.1993.247485","DOIUrl":"https://doi.org/10.1109/MCS.1993.247485","url":null,"abstract":"A GaAs transceiver circuit that includes all transmit and receive switching, amplification, frequency conversion and level shifting is described. An on-chip oscillator is also provided. Low receive current of 30 mA from a +5-V supply and a standby current of less than 0.5 mA make this an ideal component for battery-powered operation.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115284408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
A D-band monolithic fundamental oscillator using InP-based HEMTs 基于inp的hemt的d波段单片基频振荡器
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1993.247479
Y. Kwon, D. Pavlidis, T. Brock, D. Streit
{"title":"A D-band monolithic fundamental oscillator using InP-based HEMTs","authors":"Y. Kwon, D. Pavlidis, T. Brock, D. Streit","doi":"10.1109/MCS.1993.247479","DOIUrl":"https://doi.org/10.1109/MCS.1993.247479","url":null,"abstract":"The design and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAIAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu im). This represents the highest frequency of fundamental signal generation out of monolithic chips.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116335847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
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