高效率的7瓦16 GHz单片伪晶HEMT放大器

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247466

H. Tserng, P. Saunier

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引用次数: 3

摘要

本文讨论了采用单片、单级、0.25 μ m*12 mm的AlGaAs-InGaAs伪晶高电子迁移率晶体管(HEMT)放大器在16.3 GHz频率下实现7 W的连续输出功率、4.5 db增益和30.8%的功率附加效率。在5w输出时，功率增加效率为35%，功率增益为6db。芯片尺寸为3mm *3.5 mm

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A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier

The achievement of a record CW output power of 7 W with 4.5-dB gain and 30.8% power-added efficiency with a monolithic, single-stage, 0.25 mu m*12-mm AlGaAs-InGaAs pseudomorphic high-electron-mobility-transistor (HEMT) amplifier at 16.3 GHz is discussed. At 5-W output, the power-added efficiency is 35% with 6-dB power gain. The chip size is 3 mm*3.5 mm.<>

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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