基于inp的hemt的d波段单片基频振荡器

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1993.247479

Y. Kwon, D. Pavlidis, T. Brock, D. Streit

{"title":"基于inp的hemt的d波段单片基频振荡器","authors":"Y. Kwon, D. Pavlidis, T. Brock, D. Streit","doi":"10.1109/MCS.1993.247479","DOIUrl":null,"url":null,"abstract":"The design and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAIAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu im). This represents the highest frequency of fundamental signal generation out of monolithic chips.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"A D-band monolithic fundamental oscillator using InP-based HEMTs\",\"authors\":\"Y. Kwon, D. Pavlidis, T. Brock, D. Streit\",\"doi\":\"10.1109/MCS.1993.247479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAIAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu im). This represents the highest frequency of fundamental signal generation out of monolithic chips.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

报道了第一个基本d波段单片高电子迁移率晶体管(HEMT)振荡器的设计和实验特性。该电路基于双反馈拓扑结构，采用0.1 μ m假晶双异质结InAIAs/In/sub 0.7/Ga/sub 0.3/As hemt。它包括片上偏置电路和集成的e场探头，用于直接辐射到波导中。采用小栅极外围(90 μ m)的hemt，测量振荡频率为130.7 GHz，输出功率为-7.0 dBm。这代表了单片芯片产生基波信号的最高频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A D-band monolithic fundamental oscillator using InP-based HEMTs

The design and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAIAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu im). This represents the highest frequency of fundamental signal generation out of monolithic chips.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

自引率

0.00%

发文量