基于InP的HBT毫米波技术和电路性能达到40ghz

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247471

K. Kobayashi, L. Tran, S. Bui, J. Velebir, D. Nguyen, A. Oki, D. Streit

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引用次数: 24

摘要

讨论了在微带环境下工作频率高达40ghz的基于inp异质结双极晶体管(HBT)的毫米波放大器和振荡器的设计。成功地制作了20-40 ghz平衡高截距放大器和30 ghz压控振荡器(VCO)。这些电路在k -a波段频率上对第一个InP HBT微带设计进行了基准测试。高截距放大器在35 GHz时的增益为5 dB, IP3为20 dBm。单片压控振荡器使用基极发射极变容二极管从30ghz的标称振荡频率调谐高达9%的带宽。输出功率在VCO调谐时不变，约为+9.9 dBm+或0.5 dBm。集热器效率为21%。总功耗为77 mW。这些演示电路显示了hbt在毫米波通信系统中的巨大潜力

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InP based HBT millimeter-wave technology and circuit performance to 40 GHz

InP-based heterojunction bipolar transistor (HBT) millimeter-wave amplifiers and oscillators designed in a microstrip environment and working up to 40 GHz are discussed. A 20-40-GHz balanced high-intercept amplifier and a 30-GHz voltage-controlled oscillator (VCO) have been successfully fabricated and tested. These circuits benchmark the first InP HBT microstrip designs at K-a-band frequencies. The high-intercept amplifier achieves a gain of 5 dB and an IP3 of 20 dBm at 35 GHz. The monolithic VCO uses a base emitter varactor diode to tune as high as 9% bandwidth from a nominal oscillation frequency of 30 GHz. The output power is invariant of VCO tuning and is about +9.9 dBm+or-0.5 dBm. The collector efficiency is 21%. The total power dissipation is 77 mW. These demonstration circuits show the great potential of HBTs in millimeter-wave communication systems.<>

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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