F. Rosenbaum, R. Gregory, W. Richard, W. Ou, F.G. Kuhns, T. Trimble
{"title":"MMIC双三通有源带通滤波器","authors":"F. Rosenbaum, R. Gregory, W. Richard, W. Ou, F.G. Kuhns, T. Trimble","doi":"10.1109/MCS.1993.247453","DOIUrl":null,"url":null,"abstract":"The design and performance of an MMIC (monolithic microwave integrated circuit) active bandpass filter based on a twin-tee notch circuit are described. Design goals included a center frequency of 2 GHz and a Q that could be varied to well over 100. The device was fabricated in GaAs using 150- mu m transistors. Die size is approximately 1 mm/sup 2/, and power dissipation is approximately 180 mW. Although Q values meet expectations, the measured center frequency is low.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An MMIC twin-tee active bandpass filter\",\"authors\":\"F. Rosenbaum, R. Gregory, W. Richard, W. Ou, F.G. Kuhns, T. Trimble\",\"doi\":\"10.1109/MCS.1993.247453\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of an MMIC (monolithic microwave integrated circuit) active bandpass filter based on a twin-tee notch circuit are described. Design goals included a center frequency of 2 GHz and a Q that could be varied to well over 100. The device was fabricated in GaAs using 150- mu m transistors. Die size is approximately 1 mm/sup 2/, and power dissipation is approximately 180 mW. Although Q values meet expectations, the measured center frequency is low.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247453\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design and performance of an MMIC (monolithic microwave integrated circuit) active bandpass filter based on a twin-tee notch circuit are described. Design goals included a center frequency of 2 GHz and a Q that could be varied to well over 100. The device was fabricated in GaAs using 150- mu m transistors. Die size is approximately 1 mm/sup 2/, and power dissipation is approximately 180 mW. Although Q values meet expectations, the measured center frequency is low.<>