用于l波段个人通信的GaAs JFET前端mmic

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247488

T. Ohgihara, S. Kusunoki, M. Wada, Y. Murakami

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引用次数: 21

摘要

讨论了用于l波段个人通信前端的GaAs结场效应晶体管(JFET)、低噪声、低失真放大器和混频器(mmic)的发展。这些mmic可以通过3.0 v单偏置电源工作，电流损耗非常低，为4.0 mA。为了获得优异的低互调失真，采用增强模式jfet和电阻混合结构实现了电流反射有源偏置电路。

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GaAs JFET front-end MMICs for L-band personal communications

The development of GaAs JFET (junction field-effect transistor) low noise and low distortion amplifier and mixer MMICs (monolithic microwave integrated circuits) for front-end use in L-band personal communications is discussed. These MMICs can be operated by a 3.0-V single biasing supply with a very low current dissipation of 4.0 mA. In order to achieve excellent low intermodulation distortion, a current-mirror active biasing circuit using enhancement-mode JFETs and a resistive mixing configuration have been realized.<>

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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