GaAs HBT PIN二极管衰减器和开关

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247456

K. Kobayashi, A. Oki, D. Umemoto, S. Claxton, D. Streit

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引用次数: 14

摘要

讨论了一种1-10 GHz的AlGaAs-GaAs异质结双极晶体管(HBT)两级PIN二极管衰减器和一种x波段单极双掷PIN二极管开关。两级PIN衰减器在2 GHz时具有超过50 db的动态范围，最大IP3为9 dBm。每级最小插入损耗为1.7 dB，响应平稳至10 GHz。x波段开关的插入损耗为0.82 dB，关闭隔离为25 dB。带宽大于35%，IP3大于34.5 dBm。这两种电路都由PIN二极管组成，这些二极管是由基线HBT工艺的基极集电极分子束外延(MBE)层构成的。显示了在HBT技术中PIN二极管开关和衰减功能的单片集成，而无需额外的工艺或MBE材料生长。

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GaAs HBT PIN diode attenuators and switches

An AlGaAs-GaAs heterojunction-bipolar-transistor (HBT) two-stage PIN diode attenuator from 1-10 GHz and an X-band one-pole, two-throw PIN diode switch are discussed. The two-stage PIN attenuator has over 50-dB dynamic range at 2 GHz and a maximum IP3 of 9 dBm. The minimum insertion loss is 1.7 dB per stage, and response is flat to 10 GHz. The X-band switch has an insertion loss of 0.82 dB and an off-isolation of 25 dB. The bandwidth is greater than 35% and the IP3 is greater than 34.5 dBm. Both of these circuits consist of PIN diodes constructed from the base-collector molecular-beam-epitaxy (MBE) layers of a baseline HBT process. The monolithic integration of PIN diode switch and attenuation functions in an HBT technology without additional process or MBE material growth is shown.<>

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来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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