A broadband, planar, doubly balanced monolithic Ka-band diode mixer

Abstract

A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-10-GHz IF is described. The diodes are the gate-to-channel junctions of 0.2- mu m*80- mu m InGaAs HEMTs, and the baluns are Marchand-like coplanar structures.<>