High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247486

S. Hara, H. Sato, J. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yoshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita

引用次数: 7

Abstract

A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<>

查看原文本刊更多论文

1.9 GHz日本数字无绳电话用高效AlGaAs/GaAs HBT功率放大器MMIC

讨论了一种基于AlGaAs/GaAs异质结双极晶体管(HBT)技术的高效个人手机功率放大器单片微波集成电路(MMIC)。放大器的工作电压仅为3 V，但在24 dBm的1 db压缩点上，功率增加效率高达40%。这是迄今为止报道的在任何电压下工作的放大器的最高功率附加效率。放大器还具有高线性度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

自引率

0.00%

发文量