A monolithic W-band preamplified diode detector

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247452

H. Wang, W. Lam, T. Ton, D. Lo, K. Tan, G. Dow, B. Allen, J. Berenz

引用次数: 6

Abstract

A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs-InGaAs-GaAs high-electron-mobility-transistor (HEMT) technology is discussed. This chip, consisting of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA), has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic preamplified diode detector at this frequency. A higher sensitivity preamplified detector which was built by cascading two monolithic three-stage W-band LNAs with the preamplified detector chip also shows a tangential sensitivity of -85 dBm. This monolithic chip is ideal for insertion into W-band radiometer and passive imaging array systems.<>

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单片w波段预放大二极管检测器

讨论了一种基于0.1 μ m伪晶AlGaAs-InGaAs-GaAs - gaas高电子迁移率晶体管(HEMT)技术的单片w波段预放大二极管探测器。该芯片由肖特基二极管检测器和两级w波段低噪声放大器(LNA)组成，在94 GHz时测量到的检测器响应率为300 V/mW，切向灵敏度为-62 dBm。这是第一个报道的单片预放大二极管检测器在这个频率。用两个单片三级w波段LNAs与预放大检测器芯片级联构建的灵敏度更高的预放大检测器也显示出-85 dBm的切向灵敏度。这种单片芯片是理想的插入到w波段辐射计和被动成像阵列系统。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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