A highly integrated MMIC K-band transmit/receive chip

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247463

H. Fudem, S. Moghe, G. Diets, S. Consolazio

引用次数: 6

Abstract

A highly integrated, wideband, monolithic-microwave-integrated-circuit (MMIC) transmit/receive (T/R) chip designed for both commercial and military FM CW applications is discussed. The MMIC circuit was designed using 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) technology. The T/R chip has three three-stage amplifiers, an active power divide, a diode double-balanced mixer and a voltage-controlled oscillator (VCO), all integrated on a single chip 96 mils*71 mils (2.4 mm *1.8 mm) in size.<>

查看原文本刊更多论文

一个高度集成的MMIC k波段收发芯片

讨论了一种高集成、宽带、单片微波集成电路(MMIC)发射/接收(T/R)芯片，设计用于商用和军用调频连续波应用。采用0.25 μ m伪晶高电子迁移率晶体管(HEMT)技术设计了MMIC电路。T/R芯片有三个三级放大器，一个有源分压器，一个二极管双平衡混频器和一个压控振荡器(VCO)，所有这些都集成在一个96密尔*71密尔(2.4毫米*1.8毫米)大小的芯片上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

自引率

0.00%

发文量