A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC

Abstract

A fully integrated MMIC (monolithic microwave integrated circuit) receiver designed and fabricated using the 0.2- mu m pseudomorphic InGaAs-GaAs high-electron-mobility-transistor (HEMT) process technology is discussed. This MMIC receiver incorporates a single-stage RF amplifier, a two-staged balanced local oscillator (LO) amplifier, a single-stage IF amplifier, an IF switch and an image-reject diode mixer. Results from these receiver chips show good conversion gain and image rejection in a single small chip over multioctave frequencies. The chip operates from a single +5 V DC supply and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<>