一种高度紧凑的宽带GaAs HEMT X-Ku波段图像抑制接收器MMIC

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247460

R. Katz, M. Aust, R. Kasody, H. Wang, B. Allen, G. Dow, K. Tan, S. Lin, R. Myers

{"title":"一种高度紧凑的宽带GaAs HEMT X-Ku波段图像抑制接收器MMIC","authors":"R. Katz, M. Aust, R. Kasody, H. Wang, B. Allen, G. Dow, K. Tan, S. Lin, R. Myers","doi":"10.1109/MCS.1993.247460","DOIUrl":null,"url":null,"abstract":"A fully integrated MMIC (monolithic microwave integrated circuit) receiver designed and fabricated using the 0.2- mu m pseudomorphic InGaAs-GaAs high-electron-mobility-transistor (HEMT) process technology is discussed. This MMIC receiver incorporates a single-stage RF amplifier, a two-staged balanced local oscillator (LO) amplifier, a single-stage IF amplifier, an IF switch and an image-reject diode mixer. Results from these receiver chips show good conversion gain and image rejection in a single small chip over multioctave frequencies. The chip operates from a single +5 V DC supply and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC\",\"authors\":\"R. Katz, M. Aust, R. Kasody, H. Wang, B. Allen, G. Dow, K. Tan, S. Lin, R. Myers\",\"doi\":\"10.1109/MCS.1993.247460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated MMIC (monolithic microwave integrated circuit) receiver designed and fabricated using the 0.2- mu m pseudomorphic InGaAs-GaAs high-electron-mobility-transistor (HEMT) process technology is discussed. This MMIC receiver incorporates a single-stage RF amplifier, a two-staged balanced local oscillator (LO) amplifier, a single-stage IF amplifier, an IF switch and an image-reject diode mixer. Results from these receiver chips show good conversion gain and image rejection in a single small chip over multioctave frequencies. The chip operates from a single +5 V DC supply and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

讨论了采用0.2 μ m假晶InGaAs-GaAs高电子迁移率晶体管(HEMT)工艺技术设计和制造的全集成MMIC(单片微波集成电路)接收机。该MMIC接收器包含一个单级射频放大器，一个两级平衡本振(LO)放大器，一个单级中频放大器，一个中频开关和一个图像抑制二极管混频器。从这些接收器芯片的结果表明，良好的转换增益和图像抑制在一个单一的小芯片在多倍频程频率。该芯片从单个+5 V直流电源工作，并绘制280 mA。芯片总尺寸为5.5 mm*4.5 mm。

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A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC

A fully integrated MMIC (monolithic microwave integrated circuit) receiver designed and fabricated using the 0.2- mu m pseudomorphic InGaAs-GaAs high-electron-mobility-transistor (HEMT) process technology is discussed. This MMIC receiver incorporates a single-stage RF amplifier, a two-staged balanced local oscillator (LO) amplifier, a single-stage IF amplifier, an IF switch and an image-reject diode mixer. Results from these receiver chips show good conversion gain and image rejection in a single small chip over multioctave frequencies. The chip operates from a single +5 V DC supply and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<>

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来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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