{"title":"输出功率为21 dBm的20-50 GHz MMIC放大器及其倍频应用","authors":"H. Kondoh, A. Cognata","doi":"10.1109/MCS.1993.247482","DOIUrl":null,"url":null,"abstract":"A 20-50-GHz MMIC amplifier, designed on a 0.25- mu m-gate PMODFET production IC process that exhibits a 13+or-1.8 dB gain with greater than 21-dBm saturated output power across the band is discussed. A traveling-wave-input power-combined-output configuration developed for the input stage design facilitates area-efficient broadband impedance matching and also permits the amplifier to operate as a frequency doubler. More than 10-dBm output power is achieved over the 20-50-GHz doubled frequency band for 20-dBm input power.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 20-50 GHz MMIC amplifier with 21 dBm output power and its application as a frequency doubler\",\"authors\":\"H. Kondoh, A. Cognata\",\"doi\":\"10.1109/MCS.1993.247482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 20-50-GHz MMIC amplifier, designed on a 0.25- mu m-gate PMODFET production IC process that exhibits a 13+or-1.8 dB gain with greater than 21-dBm saturated output power across the band is discussed. A traveling-wave-input power-combined-output configuration developed for the input stage design facilitates area-efficient broadband impedance matching and also permits the amplifier to operate as a frequency doubler. More than 10-dBm output power is achieved over the 20-50-GHz doubled frequency band for 20-dBm input power.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 20-50 GHz MMIC amplifier with 21 dBm output power and its application as a frequency doubler
A 20-50-GHz MMIC amplifier, designed on a 0.25- mu m-gate PMODFET production IC process that exhibits a 13+or-1.8 dB gain with greater than 21-dBm saturated output power across the band is discussed. A traveling-wave-input power-combined-output configuration developed for the input stage design facilitates area-efficient broadband impedance matching and also permits the amplifier to operate as a frequency doubler. More than 10-dBm output power is achieved over the 20-50-GHz doubled frequency band for 20-dBm input power.<>