{"title":"低噪声、低直流功率线性放大器","authors":"P. Ikalainen, L. Witkowski, K. Varian","doi":"10.1109/MCS.1993.247454","DOIUrl":null,"url":null,"abstract":"Low-noise, low-DC-power linear amplifiers using high-dynamic-range GaAs/int FETs are discussed. Noise figures as low as dB have been achieved in a Ku-band amplifier simultaneously with over 36-dBm OIP3 and 18-dB gain with only 655 mW of DC power. A wideband distributed amplifier has shown average midband 7-dB gain and noise figure together with 37-dBm OIP3 with 800 mW of DC power. Greatly improved second-order intercept points (OIP2) have been observed in the distributed amplifier as compared to typical ion-implanted MESFET amplifiers. A dual-gate version, of the distributed amplifier demonstrated significant dynamic range advantages over its ion-implanted FET counterpart. Overall, state-of-the-art results in terms of simultaneous linearity, noise figure, gain-bandwidth, and DC power consumption have been achieved.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Low-noise, low DC power linear amplifiers\",\"authors\":\"P. Ikalainen, L. Witkowski, K. Varian\",\"doi\":\"10.1109/MCS.1993.247454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-noise, low-DC-power linear amplifiers using high-dynamic-range GaAs/int FETs are discussed. Noise figures as low as dB have been achieved in a Ku-band amplifier simultaneously with over 36-dBm OIP3 and 18-dB gain with only 655 mW of DC power. A wideband distributed amplifier has shown average midband 7-dB gain and noise figure together with 37-dBm OIP3 with 800 mW of DC power. Greatly improved second-order intercept points (OIP2) have been observed in the distributed amplifier as compared to typical ion-implanted MESFET amplifiers. A dual-gate version, of the distributed amplifier demonstrated significant dynamic range advantages over its ion-implanted FET counterpart. Overall, state-of-the-art results in terms of simultaneous linearity, noise figure, gain-bandwidth, and DC power consumption have been achieved.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-noise, low-DC-power linear amplifiers using high-dynamic-range GaAs/int FETs are discussed. Noise figures as low as dB have been achieved in a Ku-band amplifier simultaneously with over 36-dBm OIP3 and 18-dB gain with only 655 mW of DC power. A wideband distributed amplifier has shown average midband 7-dB gain and noise figure together with 37-dBm OIP3 with 800 mW of DC power. Greatly improved second-order intercept points (OIP2) have been observed in the distributed amplifier as compared to typical ion-implanted MESFET amplifiers. A dual-gate version, of the distributed amplifier demonstrated significant dynamic range advantages over its ion-implanted FET counterpart. Overall, state-of-the-art results in terms of simultaneous linearity, noise figure, gain-bandwidth, and DC power consumption have been achieved.<>
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