一个完全集成的35 GHz MMIC接收器，带有片上LO

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247469

R. Ramachandran, C. Woo, M. Nijjar, D. Fisher

{"title":"一个完全集成的35 GHz MMIC接收器，带有片上LO","authors":"R. Ramachandran, C. Woo, M. Nijjar, D. Fisher","doi":"10.1109/MCS.1993.247469","DOIUrl":null,"url":null,"abstract":"A monolithic-microwave-integrated-circuit (MMIC) receiver chip containing a low-noise amplifier (LNA), an active mixer, an IF amplifier, a local oscillator, and a buffer amplifier is described. The only external component required is the resonator. This feature was incorporated to accommodate both dielectric-resonator oscillator (DRO) and voltage-controlled oscillator (VCO) implementation. Chip size is 54 mils*80 mils (1.35mm *2 mm). The MMIC chip exhibits a conversion gain of 17 +or-2 dB across the 33- to 37-GHz band with a peak gain of 19 dB at 34 GHz. IF bandwidth extends from 100 MHz to over 2 GHz and the noise figure (DSB) is 9 dB. When assembled with a varactor, the local oscillator has a tuning bandwidth of over 4 GHz. The entire chip draws 55 mA from a single +8-V supply.<<ETX>>","PeriodicalId":173655,"journal":{"name":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"336 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A fully integrated 35 GHz MMIC receiver with on-chip LO\",\"authors\":\"R. Ramachandran, C. Woo, M. Nijjar, D. Fisher\",\"doi\":\"10.1109/MCS.1993.247469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic-microwave-integrated-circuit (MMIC) receiver chip containing a low-noise amplifier (LNA), an active mixer, an IF amplifier, a local oscillator, and a buffer amplifier is described. The only external component required is the resonator. This feature was incorporated to accommodate both dielectric-resonator oscillator (DRO) and voltage-controlled oscillator (VCO) implementation. Chip size is 54 mils*80 mils (1.35mm *2 mm). The MMIC chip exhibits a conversion gain of 17 +or-2 dB across the 33- to 37-GHz band with a peak gain of 19 dB at 34 GHz. IF bandwidth extends from 100 MHz to over 2 GHz and the noise figure (DSB) is 9 dB. When assembled with a varactor, the local oscillator has a tuning bandwidth of over 4 GHz. The entire chip draws 55 mA from a single +8-V supply.<<ETX>>\",\"PeriodicalId\":173655,\"journal\":{\"name\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"336 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1993.247469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1993.247469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了一种包含低噪声放大器(LNA)、有源混频器、中频放大器、本振和缓冲放大器的单片微波集成电路(MMIC)接收器芯片。唯一需要的外部组件是谐振器。该功能被纳入以适应介质谐振振荡器(DRO)和压控振荡器(VCO)的实现。芯片尺寸为54密尔*80密尔(1.35mm *2 mm)。MMIC芯片在33至37 GHz频段的转换增益为17 +或2 dB，在34 GHz频段的峰值增益为19 dB。中频带宽从100 MHz扩展到2 GHz以上，噪声系数(DSB)为9 dB。当与变容管组合时，本振的调谐带宽超过4ghz。整个芯片从单个+ 8v电源汲取55ma。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A fully integrated 35 GHz MMIC receiver with on-chip LO

A monolithic-microwave-integrated-circuit (MMIC) receiver chip containing a low-noise amplifier (LNA), an active mixer, an IF amplifier, a local oscillator, and a buffer amplifier is described. The only external component required is the resonator. This feature was incorporated to accommodate both dielectric-resonator oscillator (DRO) and voltage-controlled oscillator (VCO) implementation. Chip size is 54 mils*80 mils (1.35mm *2 mm). The MMIC chip exhibits a conversion gain of 17 +or-2 dB across the 33- to 37-GHz band with a peak gain of 19 dB at 34 GHz. IF bandwidth extends from 100 MHz to over 2 GHz and the noise figure (DSB) is 9 dB. When assembled with a varactor, the local oscillator has a tuning bandwidth of over 4 GHz. The entire chip draws 55 mA from a single +8-V supply.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

自引率

0.00%

发文量