12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247483

B. Hughes, I. Perdomo, H. Kondoh

引用次数: 26

Abstract

A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs.<>

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12 GHz低噪声MMIC放大器设计，其噪声模型可根据MODFET尺寸和偏置进行缩放

讨论了用于单片微波集成电路(MMIC)设计的可扩展、偏置相关的场效应管噪声模型。介绍了用该模型设计的一种三级12 ghz MMIC低噪声放大器(LNA)。LNA的噪声系数为1.6 db，增益为25.6 db。使用集总元件设计的LNA比以前的MMIC LNA每级(0.31 mm/sup 2/)要小得多。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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