展示了在同一PHEMT晶圆上制作的ka波段多功能MMIC电路的优越性能

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1993-06-14 DOI:10.1109/MCS.1993.247468

A. Kurdoghlian, C.S. Win, W. Yarn, J. Chen, M. Hu, C. Pao, D. Bosch

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引用次数: 6

摘要

讨论了采用δ掺杂AlGaAs-InGaAs-GaAs - gaas伪晶高电子迁移率晶体管(PHEMT)技术在同一晶片上制造的ka波段单片微波集成电路(MMIC)功率和低噪声放大器(LNAs)的优越性能。该平衡功率放大器的输出功率为500 mK，相关增益为1.2 db，在34- 36 ghz频率范围内的功率附加效率为32%。LNA电路在33至37 ghz频率范围内的噪声系数为3.5 dB，相关增益为17 dR。这些电路表明，毫米波多功能电路可以在单个晶圆上制造而不牺牲单个电路的性能。

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The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance

The superior performance of Ka-band monolithic-microwave-integrated-circuits (MMIC) power and low-noise amplifiers (LNAs), both fabricated on the same wafer using delta doped AlGaAs-InGaAs-GaAs pseudomorphic high-electron-mobility transistor (PHEMT) technology is discussed. The balanced power amplifier exhibited an output power of 500 mK with 1 2-dB associated gain and a power-added efficiency of 32% over the 34- to 36-GHz frequency range. The LNA circuit demonstrated a noise figure of 3.5 dB with an associated gain of 17 dR over the 33- to 37-GHz frequency range. These circuits show that millimeter-wave multifunctional circuits can be fabricated on a single wafer without sacrificing individual circuit performance.<>

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IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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