2016 IEEE International Reliability Physics Symposium (IRPS)最新文献_第8页

Failure mechanism of high-voltage isolated lateral diffused NMOS under high-current events 高压隔离横向扩散NMOS在大电流事件下的失效机理

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574603

Cheng-Hsu Wu, C. Lien, Jian-Hsing Lee

引用次数: 1

Impact of alpha-radiation on power MOSFETs 辐射对功率mosfet的影响

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574553

G. Schindler, K. Bach, P. Nelle, M. Deckers, A. Knapp, K. Ermisch, C. Feuerbaum, W. Emden

引用次数: 2

Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs 使用SiC功率mosfet的硬开关升压功率处理单元的长期可靠性

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574610

Stanley A. Ikpe, J. Lauenstein, G. Carr, D. Hunter, L. Ludwig, William A. Wood, C. Iannello, L. Del Castillo, Fred D. Fitzpatrick, M. Mojarradi, Yuan Chen

{"title":"Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs","authors":"Stanley A. Ikpe, J. Lauenstein, G. Carr, D. Hunter, L. Ludwig, William A. Wood, C. Iannello, L. Del Castillo, Fred D. Fitzpatrick, M. Mojarradi, Yuan Chen","doi":"10.1109/IRPS.2016.7574610","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574610","url":null,"abstract":"Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-bandgap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kW full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"272 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122535691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Predicting the vulnerability of memories to muon-induced SEUs with low-energy proton tests informed by Monte Carlo simulations 利用蒙特卡罗模拟的低能质子测试预测记忆对μ介子诱导的seu的脆弱性

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574642

J. Trippe, R. Reed, B. Sierawski, R. Weller, R. Austin, L. Massengill, B. Bhuva, K. Warren, B. Narasimham

引用次数: 5

Hot-carrier analysis on nMOS Si FinFETs with solid source doped junction 固体源掺结nMOS Si finfet的热载流子分析

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574535

A. Chasin, J. Franco, R. Ritzenthaler, G. Hellings, M. Cho, Y. Sasaki, A. Subirats, P. Roussel, B. Kaczer, D. Linten, N. Horiguchi, G. Groeseneken, A. Thean

引用次数: 11

Data-retention time prediction of long-term archive SSD with flexible-nLC NAND flash 基于柔性nlc NAND闪存的长期存档SSD数据保留时间预测

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574571

Tomonori Takahashi, Senju Yamazaki, K. Takeuchi

引用次数: 10

The state of Pb-free solder — A joint reliability overview 无铅焊料的现状-接头可靠性概述

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574566

V. Vasudevan, Tanner Schulz, M. Pei, F. Toth, A. Lucero, Bite Zhou, Sibasish Mukherjee

{"title":"The state of Pb-free solder — A joint reliability overview","authors":"V. Vasudevan, Tanner Schulz, M. Pei, F. Toth, A. Lucero, Bite Zhou, Sibasish Mukherjee","doi":"10.1109/IRPS.2016.7574566","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574566","url":null,"abstract":"Over the past decade the electronics components industry successfully transitioned from the use of leaded solder to lead-free (Pb-free) solders in response to growing environmental health concerns related to heavy metals and other substances. Pbfree components in general are in compliance to meet the European restriction of hazardous substances (RoHS) directives. During the transition period to Pb-free surface mount, numerous issues were raised about the selected alloys, the board assembly process and reliability. Early Pb-free reliability concerns were due to incomplete analytical understanding of the Tin-Silver-Copper solder creep-fatigue behavior, difficulty in computing the magnitude of ball grid array (BGA) relative displacements or strains and lack of product field history. Since then the failure mechanisms were characterized and many models are in common use for reliability estimation and design. This manuscript revisits the initial concerns, reliability model use evolution and summarizes the current understanding that has resulted in a decade of reliable field operation for the Pb-free SAC solders selected.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127023328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bidirectional NPN ESD protection in silicon photonics technology 硅光子学技术中的双向NPN ESD保护

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574520

R. Boschke, Shih-Hung Chen, G. Hellings, M. Scholz, P. De Heyn, P. Verheyen, J. Van Campenhout, D. Linten, A. Thean, G. Groeseneken

引用次数: 0

Alteration of oxide-trap switching activity at operating condition by voltage-accelerated stressing 电压加速应力对工作状态下氧化阱开关活性的影响

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574643

Z. Tung, D. Ang

引用次数: 1

Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices 恒电场应力在Si和SiGe器件中NBTI动力学的视电压依赖性基础研究

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574545

S. Mukhopadhyay, J. Franco, A. Chasin, P. Roussel, B. Kaczer, G. Groeseneken, N. Horiguchi, D. Linten, A. Thean

{"title":"Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices","authors":"S. Mukhopadhyay, J. Franco, A. Chasin, P. Roussel, B. Kaczer, G. Groeseneken, N. Horiguchi, D. Linten, A. Thean","doi":"10.1109/IRPS.2016.7574545","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574545","url":null,"abstract":"SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide electric field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide electric field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-constant oxide field BTI stress. This method eliminates the field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130475724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4