高压隔离横向扩散NMOS在大电流事件下的失效机理

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI:10.1109/IRPS.2016.7574603

Cheng-Hsu Wu, C. Lien, Jian-Hsing Lee

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引用次数: 1

摘要

本文研究了高压(HV) NWell保护(NW-GR)对高压隔离侧扩散NMOS (HV ISO-LDNMOS)静电放电(ESD)稳健性的影响机制。当HVNW-GR连接到漏极时，设备会在低压ESD击穿事件中失败，而一旦设备漂浮，设备就会通过这些事件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Failure mechanism of high-voltage isolated lateral diffused NMOS under high-current events

In this study, the mechanism of the effect of a high-voltage (HV) NWell guardring (NW-GR) on the electrostatic discharge (ESD) robustness of the HV isolated lateral diffused NMOS (HV ISO-LDNMOS) is investigated. The device fails on low-voltage ESD zapping events when the HVNW-GR is connected to the drain, whereas the device passes these events once it is floated.

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2016 IEEE International Reliability Physics Symposium (IRPS)

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