Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou
{"title":"The Dynamic Characteristics of a Mode-Localized Resonant Accelerometer","authors":"Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou","doi":"10.1109/JMEMS.2025.3541581","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3541581","url":null,"abstract":"This paper investigates the dynamic characteristics of the mode-localized resonant accelerometer (ML-RXL) both in small-signal and large-signal models. The analytical model of ML-RXL bandwidth at various amplitude ratio (AR) operating points (OPs) was derived and validated through simulations and experiments. For the small-signal model, the OP with larger AR results in a further broadening of the ML-RXL’s bandwidth. Specifically, when AR is from 1 to 4, the effective bandwidth is expanded from 46Hz to 152Hz. For large-signal model, this study reveals the emergence of multiple harmonic peaks in the AR output response curve, which become more pronounced as the intensity of the dynamic acceleration signal increases at a given OP. The findings indicate that the bandwidth of ML-RXL is constrained by mode frequency difference and dynamic acceleration signal intensity, and it can be expanded by adjusting the operating point. [2024-0209]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"222-230"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes","authors":"Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen","doi":"10.1109/JMEMS.2025.3540960","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540960","url":null,"abstract":"Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"164-173"},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoyu Kong;Yun Cao;Shenghong Lei;Hengbo Zhu;Weirong Nie;Zhanwen Xi
{"title":"Low-Energy Consumption Actuation for Microelectrothermal Actuators via Capacitive Discharge Excitation","authors":"Xiaoyu Kong;Yun Cao;Shenghong Lei;Hengbo Zhu;Weirong Nie;Zhanwen Xi","doi":"10.1109/JMEMS.2025.3540417","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540417","url":null,"abstract":"Microelectrothermal actuators are widely used in various microelectromechanical systems (MEMS), but challenges related to energy consumption and response time persist, especially in energy-constrained systems. This paper presents an innovative approach to achieving low-energy consumption in microelectrothermal actuators through capacitive discharge excitation. A theoretical model is developed to analyze the actuator’s displacement, temperature, and response time as functions of applied voltage and capacitance. Experimental results validate the theoretical predictions, showing that with an applied voltage of 56 V and a capacitance of 0.1 mF, the actuator achieves a displacement of 160 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m within 7.65 ms, consuming only 0.157 J of energy. Compared to traditional constant voltage excitation (24 V), the proposed capacitive discharge excitation method reduces energy consumption by 21.1% and shortens the response time by 81.4%. Additionally, a matching strategy for selecting capacitors is proposed, considering the limitations of available capacitor specifications. The study highlights that higher applied voltage and lower capacitance lead to faster response times and reduced energy consumption, offering a promising solution for energy-efficient MEMS applications. [2024-0225]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"184-193"},"PeriodicalIF":2.5,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrofusion Device With High-Aspect-Ratio Electrodes for the Controlled Fusion of Lipid Vesicles","authors":"Tsutomu Okita;Mamiko Tsugane;Kosuke Kato;Keisuke Shinohara;Hiroaki Suzuki","doi":"10.1109/JMEMS.2025.3530466","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3530466","url":null,"abstract":"Giant liposomes or giant vesicles have been used as dynamic bioreactors because of their ability to fuse with other vesicles to mix their contents. Among various principles, electrofusion is particularly useful because it is quick and does not require solution exchange. In conventional vesicle fusion methods, quantitative evaluation of fusion events has often been difficult because vesicles float and move due to the unexpected flow. In this study, we developed a microfluidic device equipped with microchambers for structural trapping and electrodes for vesicle fusion, in which the fusion phenomenon can be observed in definite locations. Specifically, we fabricated an electrofusion device that had conductive silicon electrodes and PDMS microchambers that held giant unilamellar vesicles (GUVs; diameter <inline-formula> <tex-math>$gt 6~mu $ </tex-math></inline-formula>m) in place. The fusion yield of GUV-GUV and GUV-small GUV (diameter <inline-formula> <tex-math>$lt 2~mu $ </tex-math></inline-formula>m) was examined by detecting the fluorescence marker that appeared upon the mixing of internal contents of two vesicle populations. This architecture can be used to realize parallel electrofusion assays for quantitatively analyzing biochemical reactions in the cell-mimetic environment. [2024-0166]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"174-183"},"PeriodicalIF":2.5,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2024.3523667","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3523667","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10870465","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bidirectional Thermo-Acoustic Modulator Based on LiNbO₃ Thin Film","authors":"Xuankai Xu;Yushuai Liu;Tao Wu","doi":"10.1109/JMEMS.2024.3510540","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3510540","url":null,"abstract":"This letter presents a bidirectional thermo-acoustic (TA) modulator utilizing Y36-cut LiNbO<inline-formula> <tex-math>$_{mathbf {3}}$ </tex-math></inline-formula> thin film. The device integrates two TA phase modulators and a one-dimensional (1D) phase-control transducer within a compact footprint of less than 0.35 mm2. The suspended LN thin film TA phase modulator demonstrates a phase response of 17°/mW. The composed TA amplitude modulator supports bidirectional amplitude modulation, achieving over 30 dB modulation at 460 MHz with a control voltage of 1.1 V. This compact and efficient design makes it ideal for phononic integrated circuit (PnIC) and advanced acoustic signal processing applications. [2024-0162]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"110-112"},"PeriodicalIF":2.5,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Disha Chugh;Hyun-Keun Kwon;Gabrielle D. Haddon-Vukasin;Thomas W. Kenny;Saurabh A. Chandorkar
{"title":"Sensing Voltage at Electrically Floating Nodes: A Path Toward Enhancing Performance and Robustness in Capacitive MEMS Resonators","authors":"Disha Chugh;Hyun-Keun Kwon;Gabrielle D. Haddon-Vukasin;Thomas W. Kenny;Saurabh A. Chandorkar","doi":"10.1109/JMEMS.2025.3528762","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3528762","url":null,"abstract":"Capacitively transduced micromechanical resonators for timing reference applications are overwhelmingly measured from the current output at their sensing electrodes, using a transimpedance amplifier (TIA). Continuous time floating-voltage measurement in capacitive resonators has not found its reach due to various reasons, the primary drawback being picking up of stray charges through stray/unknown capacitances linked to the electrically floating electrode. In this paper, we introduce a novel concept of bias tuning electrodes which alleviates this issue. Through theoretical modelling and experimental evidence, we show that voltage measurement performed at electrically-floating sensing-electrode using a voltage-amplifier (VA) is superior to TIA topology in terms of robustness, noise performance, and bandwidth. Furthermore, we introduce a new electrical circuit equivalent model for resonator devices with a bias tuning electrode in lieu of the standard Mason and Butterworth-Van Dyke (BVD) models which are unsuitable for our new topology. This new model also offers better insights for the combined system of resonator and sensing-unit. The theoretical and experimental work was carried out using a Epi-seal encapsulated DETF device wherein the superior performance of VA topology in key parameters and equivalent performance in other measures is demonstrated. This work is readily extendable to any general capacitively transduced device.[2024-0156]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"116-133"},"PeriodicalIF":2.5,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Overcoming Welding and Contact Degradation Failures Incurred by Complementary N/MEMS Logic Gate Structures Fabricated on SOI Wafers","authors":"Bennett Smith;Md Ataul Mamun;Benjamin Horstmann;Ümit Özgür;Vitaliy Avrutin","doi":"10.1109/JMEMS.2025.3526543","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3526543","url":null,"abstract":"Nano/microelectromechanical systems (N/MEMS) based complementary logic circuits offer a physically robust alternative to conventional CMOS control systems, which are able to function in environments unsuitable for transistor devices. In this work we demonstrate novel, configurable, complementary logic circuits comprised entirely of relays at both NEMS and MEMS scale, which are capable of fulfilling all primary logic functions. Lifetime testing of the fabricated devices revealed two key failure modes: contact degradation and welding of high voltage cantilevers, both of which are caused by the charging and discharging of unwanted parasitic capacitances inherent to complementary relay structures. Devices are consequently damaged by high transient current and arc discharge between contacts. Several solutions are proposed and implemented to mitigate these issues, including minimization of unwanted capacitances, optimization of metallization scheme, introduction of intermediate operation cycles intended to increase time between state changes, and prevention of welding by preemptively charging capacitors to an intermediate voltage. To this effect, a detailed study of lifetimes for both single cantilevers and logic gate structures is presented comparing a variety of metallization schemes using Pt, Ti, TiN, and W, including their multilayer combinations. These varied optimization methods yielded single cantilever lifetimes of 1.74 billion cycles on average for devices with a Ti adhesion layer, a Pt primary layer, and a W surface layer to increase durability. Using the same metallization scheme, complementary logic structures achieved 0.6 million cycles on average. These results demonstrate the viability of robust N/MEMS based complementary logic circuits for safety critical control applications.[2024-0203]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"231-239"},"PeriodicalIF":2.5,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Study of Stiction Mitigation in Micromachine Structures via Naphthalene Sublimation","authors":"Hamed Nikfarjam;Sepehr Sheikhlari;Siavash Pourkamali","doi":"10.1109/JMEMS.2025.3527416","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3527416","url":null,"abstract":"Micromachined devices are susceptible to stiction failure, where suspended structures irreversibly adhere due to surface forces. This paper investigates the effectiveness and reproducibility of simple, low-cost sublimation methods to reduce stiction using a saturated naphthalene-isopropyl alcohol (IPA) solution or molten naphthalene. Six categories of test structures were fabricated on silicon-on-insulator wafers, including narrow and wide cantilevers, clamped-clamped beams, parallel clamped-clamped beams, meandering beams, and suspended proof masses. We evaluated the effectiveness of air drying, IPA rinse, supercritical point drying (CPD), naphthalene-IPA solution, and molten naphthalene by identifying the longest and least stiff intact structure released for each method. Results showed that molten naphthalene outperformed CPD for wider structures, and reproducibility was confirmed over 10 repetitions per structure and method. These cost-effective, room-temperature techniques are well-suited for mitigating stiction in larger and softer structures, enhancing accessibility and availability for MEMS fabrication. [2024-0170]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"213-221"},"PeriodicalIF":2.5,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}