Journal of Microelectromechanical Systems最新文献

筛选
英文 中文
Journal of Microelectromechanical Systems Publication Information 微机电系统出版信息学报
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-10-02 DOI: 10.1109/JMEMS.2025.3606255
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3606255","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3606255","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"C2-C2"},"PeriodicalIF":3.1,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11190400","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrasonic Selective Opening of Microcavities for Drug Delivery Microimplants 微腔的超声选择性打开给药微植入物
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-18 DOI: 10.1109/JMEMS.2025.3597789
Theocharis Nikiforos Iordanidis;Argyris Spyrou;Göran Stemme;Niclas Roxhed
{"title":"Ultrasonic Selective Opening of Microcavities for Drug Delivery Microimplants","authors":"Theocharis Nikiforos Iordanidis;Argyris Spyrou;Göran Stemme;Niclas Roxhed","doi":"10.1109/JMEMS.2025.3597789","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3597789","url":null,"abstract":"We present a fully passive, ultraminiaturized drug delivery microchip that enables wireless, on-demand release via ultrasonic actuation - a mechanism not previously demonstrated in implantable drug delivery systems. By eliminating the need for integrated power and control components, the device achieves sub-millimeter dimensions (<0.2> <tex-math>$times 0.5$ </tex-math></inline-formula> mm <inline-formula> <tex-math>$times 1$ </tex-math></inline-formula> mm), enabling minimally invasive implantation in sensitive or hard-to-reach tissues. The system relies on ultrathin metallic membranes (<100> <tex-math>$mu $ </tex-math></inline-formula>m wide, <200> <tex-math>$2~mu $ </tex-math></inline-formula>g of powder payload from individual microcavities in response to specific frequencies (360/420/580 kHz), with membrane rupture occurring in <italic>in vivo</i> conditions at ultrasonic intensities within clinically safe limits (<150><sup>2</sup></i>). This platform represents a significant step toward precise, programmable drug delivery in anatomically constrained or delicate regions.[2025-0104]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"691-700"},"PeriodicalIF":3.1,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11128870","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrasensitive Sensing via Internal Resonance Induced Frequency Combs in Micromechanical Resonators 微机械谐振器中内部共振诱导频率梳的超灵敏传感
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-15 DOI: 10.1109/JMEMS.2025.3595899
Ting-Yi Chen;Chun-Pu Tsai;Wei-Chang Li
{"title":"Ultrasensitive Sensing via Internal Resonance Induced Frequency Combs in Micromechanical Resonators","authors":"Ting-Yi Chen;Chun-Pu Tsai;Wei-Chang Li","doi":"10.1109/JMEMS.2025.3595899","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3595899","url":null,"abstract":"Operating microscale mechanical resonators in the nonlinear region has brought up abundant research activities. Among various nonlinear phenomena, internal resonance referring to energy exchange between different vibration modes in a resonant cavity has been theoretically and experimentally demonstrated with a great potential for improving the sensitivity performance compared to conventional frequency modulated resonant sensors. In particular, mechanical frequency combs induced by unstable internal resonance in which time-varying energy transfer between modes occurs, have emerged as alternative candidates for boosting the sensitivity. This work experimentally shows this by 1:6 internal resonance derived frequency comb spacing modulation in micromechanical resonators, revealing more than <inline-formula> <tex-math>$30times $ </tex-math></inline-formula> enhancement in response to temperature change compared to that in a regular resonator counterpart. Based on the nonlinear model developed in this work, the use of 1:6 internal resonance is key to attaining linear dependence of comb spacing against temperature variation. The results show a new paradigm for ultrasensitive sensing schemes. [2025-0036]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"557-570"},"PeriodicalIF":3.1,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 27-nW Wake-Up Receiver With a Quartz Transformer Matching Network Achieving −71.9-dBm Sensitivity and −46-dB SIR at 0.8% Offset 一种带有石英变压器匹配网络的27-nW唤醒接收器,在0.8%偏移量下实现- 71.9 dbm灵敏度和- 46 db SIR
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-12 DOI: 10.1109/JMEMS.2025.3584766
Joshua Rosenberg;Mary E. Galanko Klemash;Ryan Rudy;Tyler Hack;Alexander B. Kozyrev;Prasad Gudem;Andy Walker;Drew A. Hall;Sarah S. Bedair
{"title":"A 27-nW Wake-Up Receiver With a Quartz Transformer Matching Network Achieving −71.9-dBm Sensitivity and −46-dB SIR at 0.8% Offset","authors":"Joshua Rosenberg;Mary E. Galanko Klemash;Ryan Rudy;Tyler Hack;Alexander B. Kozyrev;Prasad Gudem;Andy Walker;Drew A. Hall;Sarah S. Bedair","doi":"10.1109/JMEMS.2025.3584766","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3584766","url":null,"abstract":"This work reports the first ultra-low power wake-up receiver (WuRX) to be integrated with a quartz micro-electromechanical systems (MEMS) transformer-based matching network (MN), achieving the best signal-to-interference ratio (SIR) compared to state-of-the-art sub-100 nW receivers. A quartz resonant piezoelectric transformer (PT) was chosen for its high loaded <italic>Q (~19,000)</i>, enabling large, passive voltage gain – a necessity for low-power radios where active RF amplification consumes too much power. Optimization of the CMOS envelope detector (ED) input impedance and number of ED stages preserves the high <italic>Q</i> of the preceding MEMS transformer while maintaining a high passive gain of 27 dB and a narrow bandwidth of 2 kHz at 50 MHz. The quartz PT is designed for maximum voltage gain from a <inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula> source to the ED input. The 6-stage ED is designed with an input impedance greater than 1 M<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> and a conversion gain of 264.9 V<sup>-1</sup> to maximize sensitivity without de-<italic>Q</i>ing the transformer. The WuRX is implemented in a 65-nm CMOS process and achieves a sensitivity of −71.9 dBm while consuming just 27 nW. The measured SIR is −46 dB at a 0.8% frequency offset due to the narrowband filtering from the transformer.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"611-621"},"PeriodicalIF":3.1,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temporal Dynamics of GHz Acoustic Waves in Chipscale Phononic Integrated Circuits 芯片级声子集成电路中GHz声波的时间动力学
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-07 DOI: 10.1109/JMEMS.2025.3593384
A. Fahad Malik;Mahmut Bicer;Krishna C. Balram
{"title":"Temporal Dynamics of GHz Acoustic Waves in Chipscale Phononic Integrated Circuits","authors":"A. Fahad Malik;Mahmut Bicer;Krishna C. Balram","doi":"10.1109/JMEMS.2025.3593384","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3593384","url":null,"abstract":"Phononic integrated circuits, which manipulate GHz-frequency acoustic fields in <inline-formula> <tex-math>$mathrm {~ {mu }text {m}}$ </tex-math></inline-formula>-scale waveguides, provide new degrees of freedom for routing and manipulation of microwaves in deeply sub-wavelength geometries with associated implications for chipscale sensing and signal processing. The combination of low propagation loss, long interaction lengths and slow speed of sound put together with the large measurement bandwidths and high frequency resolution available from modern vector network analyzers (VNA) makes it feasible to visualize the temporal dynamics of propagating acoustic fields in these devices and <italic>see the device in action</i>. Two representative examples we discuss here are pulse circulation and ringdown in an acoustic microring resonator, and the observation of (parasitic) multipath interference effects in waveguide resonator geometries. In the absence of fast 3D acoustic field imaging modalities, such time domain reflectometry based methods provide a viable alternative for mapping interface reflection and loss, which becomes increasingly critical as these devices start to scale in complexity.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"653-662"},"PeriodicalIF":3.1,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Q-Factor Enhancement of Micro Hemispherical Resonators via Optimization of Film Distribution 通过优化薄膜分布来增强微半球谐振器的q因子
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-05 DOI: 10.1109/JMEMS.2025.3589654
Feng Zhu;Mengxue Li;Xuezhong Wu;Jiangkun Sun;Kun Lu;Dingbang Xiao;Yan Shi;Xiang Xi
{"title":"Q-Factor Enhancement of Micro Hemispherical Resonators via Optimization of Film Distribution","authors":"Feng Zhu;Mengxue Li;Xuezhong Wu;Jiangkun Sun;Kun Lu;Dingbang Xiao;Yan Shi;Xiang Xi","doi":"10.1109/JMEMS.2025.3589654","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3589654","url":null,"abstract":"Micro hemispherical resonator gyroscopes (mHRG) offer significant advantages such as high precision and good reliability in inertial measurement applications. Thin-film damping of the resonators is a key factor limiting the performance improvement of mHRG. In this paper, we present a 3D mask-based metallization process that achieves ultra-thin 7 nm metallization on resonators through precise thickness distribution control. This method comprehensively analyzes the film thickness distribution and the energy distribution of the resonator, and reduces the film damping by regulating the film thickness distribution on the inner surface of the resonator through a mask. Our results show that this method reduces the film thickness from 13 nm to 7 nm (46.5% reduction) while maintaining the electrical conductivity and improving the Q-factor by 8.4 percentage points. The measured highest Q-factor of the 7 nm thin-film micro hemispherical resonator is 4.19 million, with an average Q-loss rate of 32.2%. Experimental validation confirms that the 7 nm Pt film not only meets the low resistance (<inline-formula> <tex-math>$le 500~Omega $ </tex-math></inline-formula>) requirement, but also reduces the energy dissipation of the resonator by minimizing thermoelastic damping and internal friction. This approach provides an efficient film thickness modulation strategy for mHRG. [2025-0079]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"548-556"},"PeriodicalIF":3.1,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase-Flip Lattice Bulk Acoustic Wave Filter With Unbalanced Terminals Using Hybrid Heterogeneous Integration Technology 基于混合异构集成技术的非平衡端相翻转点阵体声波滤波器
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-04 DOI: 10.1109/JMEMS.2025.3592272
Rui Ding;Weipeng Xuan;Feng Gao;Danyu Mu;Tengbo Cao;Chengzhi Wang;Wei Wang;Yinpei Chen;Wenzhi Ge;Jikui Luo;Richard Fu;Shurong Dong
{"title":"Phase-Flip Lattice Bulk Acoustic Wave Filter With Unbalanced Terminals Using Hybrid Heterogeneous Integration Technology","authors":"Rui Ding;Weipeng Xuan;Feng Gao;Danyu Mu;Tengbo Cao;Chengzhi Wang;Wei Wang;Yinpei Chen;Wenzhi Ge;Jikui Luo;Richard Fu;Shurong Dong","doi":"10.1109/JMEMS.2025.3592272","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3592272","url":null,"abstract":"Bulk acoustic wave (BAW) filters are crucial components in communications systems. Ladder and lattice types are two basic filter topologies used in unbalanced and balanced systems, respectively. Compared to ladder filters, lattice filters have advantages of larger bandwidth and better trade-off between out-of-band rejection and roll-off. However, the current lattice filters are restricted by their incompatible balanced terminals with other radio frequency devices. In this work, a hybrid integration of integrated passive device (IPD) and lattice-type bulk acoustic wave (BAW) filter with unbalanced terminals was proposed. The IPD network achieved phase flip and transformed the balanced terminal into unbalanced terminal of the lattice-type BAW filter. To realize a more compact integration of the BAW device and phase-flip network, for the first time we achieved Si microcap capacitor structure, which can also be adopted for 3D integration of other acoustic and electromagnetic devices. The fabricated filter achieved a minimum insertion loss of 1.39 dB and a 3-dB bandwidth of 145 MHz, a relative bandwidth fraction of 7.2%. Compared with the ladder type filter with same resonator number, the phase-flip lattice filter achieved ~30% improvement in bandwidth. This work brings new methodology for the topology designs of lattice filters and compact integration of capacitors and inductors with BAW devices. [2025-0086]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"663-671"},"PeriodicalIF":3.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Journal of Microelectromechanical Systems Publication Information 微机电系统出版信息学报
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-08-01 DOI: 10.1109/JMEMS.2025.3584442
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3584442","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3584442","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"C2-C2"},"PeriodicalIF":3.1,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106943","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Conductivity-Based MEMS Detector for Helium 基于电导率的MEMS氦探测器
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-07-31 DOI: 10.1109/JMEMS.2025.3592153
Hasan Albatayneh;Mohammad I. Younis
{"title":"A Conductivity-Based MEMS Detector for Helium","authors":"Hasan Albatayneh;Mohammad I. Younis","doi":"10.1109/JMEMS.2025.3592153","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3592153","url":null,"abstract":"There is a critical need to sense the inert gas helium (He) and to inform of its leakage in critical applications such as monitoring the integrity of dry cask nuclear storage systems. This work presents a new method for the sensing and detection of helium. The concept relies on conductivity-based cooling of a heated MEMS resonant bistable structure and exploits the snap-through and pull-in instabilities to realize a sensitive sensor and a threshold electrical switch. We show that the microbeam acts as a switch and generates binary direct voltage signals for simplified readout at desired helium thresholds. Additionally, experimental data demonstrate the potential of the microdevice as a resonant sensor, with a maximum sensitivity of 6.43%/%He. The device is demonstrated to exhibit minimal sensitivity to humidity and interference from other gases such as <inline-formula> <tex-math>$text{CO}_{mathbf {2}}$ </tex-math></inline-formula>. Furthermore, calibration curves for the temperature variation are generated to compensate for its effect. The proposed approach is promising for the sensitive detection of inert gases based on physical principles and for simplifying warning systems through combining sensing and actuation into a single MEMS device.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"645-652"},"PeriodicalIF":3.1,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Backside-Supported Electrothermal Actuation for 25,000 g-Survivable Optical Switches 25000 g-生存性光开关的背面支持电热致动
IF 3.1 3区 工程技术
Journal of Microelectromechanical Systems Pub Date : 2025-07-31 DOI: 10.1109/JMEMS.2025.3591299
Jin Xie;Tao He;Zheng Lian;Xiao Zhang;Yongcun Hao;Honglong Chang;Zhuang Xiong;Jun Cao;Hao Zhang;Chao Zeng;Yizhuang Zhao;Jun Dai
{"title":"Backside-Supported Electrothermal Actuation for 25,000 g-Survivable Optical Switches","authors":"Jin Xie;Tao He;Zheng Lian;Xiao Zhang;Yongcun Hao;Honglong Chang;Zhuang Xiong;Jun Cao;Hao Zhang;Chao Zeng;Yizhuang Zhao;Jun Dai","doi":"10.1109/JMEMS.2025.3591299","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3591299","url":null,"abstract":"Electrothermal actuation micro-electro-mechanical systems (MEMS) optical switches have found widespread applications in optical fields owing to their compact size, low power consumption, and continuous tunability. However, the low survivability of optical switches in high-<italic>g</i> overload significantly impedes its application in military and aerospace. Here, we propose a MEMS optical switch based on a backside-supported electrothermal actuation mechanism to enhance its high-<italic>g</i> survivability. A double-sided deep reactive ion etching process is developed to fabricate the backside-supported MEMS optical switch. Experimental results show that the MEMS optical switch can survive under overloads as high as 25,<inline-formula> <tex-math>$000~g$ </tex-math></inline-formula>. The survival mechanism of the backside-supported MEMS optical switch under high-<italic>g</i> inertial loading is investigated. It is the out-of-plane displacement limitation function of backside-supported beams that enhances the overload resistance. In addition, the electrothermal actuation mechanism of the backside-supported beams-incorporated optical switch is investigated. Experimental results show that the optical switch actuator fabricated demonstrates a displacement of <inline-formula> <tex-math>$38.65~mu $ </tex-math></inline-formula>m at 1.05 W, which coincides well with the proposed electrothermal actuation model. We believe this work is significant for providing reliable photonic switching capabilities under extreme mechanical shocks in military/aerospace systems. [2025-0090]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"701-713"},"PeriodicalIF":3.1,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信