Characterization of Al and Ni-P Films as Hardmasks for the ICP-RIE Plasma Etching Bosch Process

IF 3.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Camila Sola Ruiz;Valter Salles do Nascimento;Clovis Fischer;Frederico Hummel Cioldin;Audrey Roberto Silva;Jose Alexandre Diniz
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引用次数: 0

Abstract

The high-performance mechanical resistance has attracted intensive scientific interest in Hardmasks (HMs) films applicable via the Bosch etching process for Silicon Micro-Channels (SiMCs) fabrication. This manuscript compares different film deposition methods and metal film behavior as HMs during the dry etching for the Bosch process in the Inductively Coupled Plasma and Reactive Ion Etching system. The HMs were deposited by thermal evaporation Aluminum (Alev), DC Sputtering Aluminum (Alspu), and bath chemical Nickel-phosphorus (Ni-P). The 500nm, $1\mu $ m and $1\mu $ m thick layers of Alspu, Alev and Ni-P films, respectively, were deposited on the Si wafer (p-type (100) orientation, $400\mu $ m thick layer, and 3-inch diameter). The Four Point Probe Measurements and Atomic Force Microscopy (AFM) analyses extract the resistivity and grain size values, respectively. For this work, the HM patterns consist of parallel metallic lines ranging from 175 to $220~\mu $ m in width with spacing between 230 and $500~\mu $ m. The pattern transfer technique was carried out by lithography and wet etching. All samples were cleaved on $10\times 10$ mm squares with a $400~\mu $ m thick layer. The Bosch etching process was applied for time variations between 40sec and 60sec per cycle, using SF ${}_{6}+$ Ar and C4F ${}_{8}+$ Ar, to obtain the SiMCs, with anisotropic etching and depth values between $66~\mu $ m and $104~\mu $ m. The SiMC depth values were measured using Scanning Electron Microscopy (SEM) and Scan Profile analyses. The Al and Ni-P film analyses of the resistivity and grain size were related to the HM performance during the Bosch process. Key Words: ICP-RIE, Si Microchannel, Bosch process.[2024-0149]
ICP-RIE等离子体刻蚀博世工艺中Al和Ni-P薄膜作为硬掩膜的表征
高性能的机械阻力引起了人们对硬膜(HMs)薄膜的强烈科学兴趣,这些薄膜可通过博世蚀刻工艺用于硅微通道(simc)的制造。本文比较了感应耦合等离子体和反应离子刻蚀系统中博世工艺干刻蚀过程中不同的薄膜沉积方法和金属膜作为HMs的行为。采用热蒸发铝(Alev)、直流溅射铝(Alspu)和镀液化学镍磷(Ni-P)沉积HMs。在p型(100)取向、厚度为400 μ m、直径为3英寸的硅片上分别沉积了500nm、1 μ m和1 μ m厚度的Alspu、Alev和Ni-P薄膜层。四点探针测量和原子力显微镜(AFM)分析分别提取了电阻率和晶粒尺寸值。在这项工作中,HM图案由平行金属线组成,宽度为175 ~ 220~ $ $ mu $ m,间距为230 ~ $ $500~ $ $ mu $ m。图案转移技术通过光刻和湿法蚀刻进行。所有样品都在$10 × 10$ mm的正方形上切割,厚度为$400~ $ mu $ m。采用Bosch刻蚀工艺,在每周期40 ~ 60秒的时间变化范围内,采用SF ${}_{8}+$ Ar和C4F ${}_{8}+$ Ar,得到各向异性刻蚀的SiMC,刻蚀深度值在$66~ $104~ $ $ mu $ m之间。在博世过程中,Al和Ni-P薄膜的电阻率和晶粒尺寸与HM性能有关。关键词:ICP-RIE,硅微通道,博世工艺[2024-0149]
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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