Journal of Microelectromechanical Systems最新文献_第2页

High-Depth FIB Etching on Silicon Sidewall: Coupling Incidence Angle and Initial Multi-Groove Surface Topography 硅侧壁高深度FIB蚀刻：耦合入射角和初始多槽表面形貌

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-18 DOI: 10.1109/JMEMS.2025.3548260

Jun Dai;Zhiqin Wu;Zhen He;Yu Sun;Yonghua Zhao;Reo Kometani

{"title":"High-Depth FIB Etching on Silicon Sidewall: Coupling Incidence Angle and Initial Multi-Groove Surface Topography","authors":"Jun Dai;Zhiqin Wu;Zhen He;Yu Sun;Yonghua Zhao;Reo Kometani","doi":"10.1109/JMEMS.2025.3548260","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3548260","url":null,"abstract":"Focused-ion-beam (FIB) etching on the silicon sidewall surface is significant for improving the performance of micro-electro-mechanical system (MEMS) device. However, the high-depth etching on the functional surface requires the ion beam to be inclined to the surface with an initial topography, posing a notable challenge in revealing the ion beam-silicon solid interaction mechanism. In this article, we propose a molecular dynamic model for the ion-solid interaction of FIB etching on the silicon sidewall by introducing the coupling of incidence angle and initial multi-groove surface. The model is validated by conducting FIB tilted etching on a multi-groove silicon sidewall surface fabricated by inductively coupled plasma (ICP). By tilting the ion beam with an incidence angle, the target surface roughness Ra can be reduced from 126 nm to 4 nm on a <inline-formula> <tex-math>$125~mu $ </tex-math></inline-formula>m-depth silicon sidewall. We also found the inheritable effect of initial multi-groove topography on the processed sidewall surface. Results show that the inheritable effect can be reduced by decreasing the incidence angle of the ion beam. Furthermore, FIB tilted etching is applied to the sidewall micro-mirror surface of an ICP etched MEMS optical switch. By using an incidence angle of 20°, the sidewall surface with an area of <inline-formula> <tex-math>$177~mu $ </tex-math></inline-formula>m <inline-formula> <tex-math>$times 125~mu $ </tex-math></inline-formula>m is processed. The optical transmission efficiency of the MEMS switch increases from 6.9% to 34.6%. We believe this work is significant for expanding the application range of FIB etching on MEMS devices. [2024-0212]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"347-358"},"PeriodicalIF":2.5,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of LCE Microactuator Arrays Through Soft Lithography With Surface Alignment 采用表面对准软光刻技术制备LCE微致动器阵列

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-13 DOI: 10.1109/JMEMS.2025.3546852

Ke Li;Jae-Jun Kim;Jayer Fernandes;Hongrui Jiang

引用次数: 0

Study on Mechanical Cross-Axis Coupling for Non-Follow-Up Tip-Tilt Vertical Comb-Drive Micromirror 非随动倾斜-倾斜垂直梳状驱动微镜机械跨轴耦合研究

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-11 DOI: 10.1109/JMEMS.2025.3546280

Yuhu Xia;Biyun Ling;Xiaoyue Wang;Yaming Wu

{"title":"Study on Mechanical Cross-Axis Coupling for Non-Follow-Up Tip-Tilt Vertical Comb-Drive Micromirror","authors":"Yuhu Xia;Biyun Ling;Xiaoyue Wang;Yaming Wu","doi":"10.1109/JMEMS.2025.3546280","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3546280","url":null,"abstract":"This paper presents a quantitative analysis of mechanical cross-axis coupling in tip-tilt (TT) scanning of vertical comb-drive (VCD) micromirror in detail. In the proposed non-follow-up (NFU) TT VCD micromirror design, one set of vertical combs (VCs) is fixed on the wiring substrate, while the other VC set can rotate along with the gimbal, the springs, and the reflective mirror. Such design brings not only high fabrication feasibility but also convenience for driving signal fan-out of micromirror array (MMA). The fabrication process is adopted on a double-silicon-on-insulator (D-SOI) wafer and a hollow copper (Cu) through-silicon-via (TSV) wiring substrate through bulk silicon micromachining. Based on this, a mechanical cross-axis coupling model is developed by introducing mechanical cross-axis coupling factors and plugging the deflection-dependent VC capacitance expressions into TT scanning angle solution, in order to evaluate influence from VCD actuators and series springs of gimbaled scanning structure. The calculation indicates that inner-axis rotation has little influence on outer-axis rotation, while the opposite is in direct relation to the number of VC units that contribute to VC capacitance calculation. A comparison between calculation with measured results obtained from fabricated devices is also conducted, which shows a good agreement. Additionally, we have investigated the decoupling method of the proposed model to evaluate its capability of biaxial driving voltage estimation. Furthermore, to overcome the drawbacks of the NFU TT scanning structure, a simplified calibration methodology is proposed as the extended application of the proposed model, featuring both lowering calibration workload and guaranteeing TT scanning accuracy. [2024-0214]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"283-296"},"PeriodicalIF":2.5,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A MEMS Resonator Coupled With a Resistive Sensor for Improved Sensing and Actuation 一种与电阻式传感器耦合的MEMS谐振器，用于改进传感和驱动

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-06 DOI: 10.1109/JMEMS.2025.3545087

Hasan Albatayneh;Mohammad Matahen;Aaron Kishlock;Danling Wang;Mohammad I. Younis

引用次数: 0

Design, Fabrication, and Characterization of High-Stiffness Suspended Microcalorimeters With Nanowatt Power Resolution 具有纳瓦功率分辨率的高刚度悬浮微热计的设计、制造和表征

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-05 DOI: 10.1109/JMEMS.2025.3543201

Cedric Shaskey;Amun Jarzembski;Milo Birdwell;Keunhan Park

引用次数: 0

MEMS Air-Damped Isolator for Dual-Axis Micromirrors: Broad-Range Frequency Vibration Isolation 用于双轴微镜的MEMS气阻尼隔振器：宽频率隔振

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-27 DOI: 10.1109/JMEMS.2025.3543166

Longqi Ran;Wu Zhou;Jiangbo He;Jiahao Wu;Yan Wang;Xuhui Gong

{"title":"MEMS Air-Damped Isolator for Dual-Axis Micromirrors: Broad-Range Frequency Vibration Isolation","authors":"Longqi Ran;Wu Zhou;Jiangbo He;Jiahao Wu;Yan Wang;Xuhui Gong","doi":"10.1109/JMEMS.2025.3543166","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3543166","url":null,"abstract":"The fracture failure of dual-axis micromirrors under the AEC-Q100 qualification test could not be mitigated by structural designs alone due to the need for compatibility in bending and torsional stiffness. To address this, a passive MEMS vibration isolator was proposed to protect the micromirrors within a broad frequency range of 20 Hz to 1200 Hz, unlike conventional designs limited to a fixed frequency. The proposed method was based on a two-degree-of-freedom (DOF) micromirror-isolator system, in contrast to the single-DOF systems employed in existing methods. The isolator’s stiffness was matched to the micromirror’s stiffness to maximize the mirror plane’s movement, and an air damping mechanism was incorporated using a <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>m gap to control the dynamic response time. The designed isolator was fabricated using a novel SOI-on-glass process and tested on a high-precision vibration shaker equipped with a laser Doppler vibrometer. Results showed that the proposed isolator attenuated vibration amplitude by 25.55 dB, closely aligning with the design value of 24.89 dB. Additionally, an automotive-grade vibration test demonstrated successful isolation under a 50g vibration within the 20 Hz to 1200 Hz frequency range, without introducing parasitic modes that could disrupt the micromirror’s operational modes.[2024-0220]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"260-267"},"PeriodicalIF":2.5,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10907265","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers 基于单相单向换能器的声延迟线频带分析

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-26 DOI: 10.1109/JMEMS.2025.3528522

Yang Li;Jiawei Li;Tao Wu

{"title":"Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers","authors":"Yang Li;Jiawei Li;Tao Wu","doi":"10.1109/JMEMS.2025.3528522","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3528522","url":null,"abstract":"This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection (<inline-formula> <tex-math>$Gamma $ </tex-math></inline-formula>) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (<inline-formula> <tex-math>${f} _{c}$ </tex-math></inline-formula>) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length (<inline-formula> <tex-math>$L_{g}$ </tex-math></inline-formula>) ranging from 50 to <inline-formula> <tex-math>$300~mu $ </tex-math></inline-formula>m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"194-203"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N 在 Al0.7Sc0.3N 中实现高机电耦合径向扩展模式谐振器

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-26 DOI: 10.1109/JMEMS.2025.3542363

Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson

{"title":"High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N","authors":"Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson","doi":"10.1109/JMEMS.2025.3542363","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3542363","url":null,"abstract":"This work reports aluminum scandium nitride (Al<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula>, when compared to the more traditionally utilized LE and WE modes. The higher <inline-formula> <tex-math>${k} _{t}^{2}$ </tex-math></inline-formula> is due to the constructive addition of the <inline-formula> <tex-math>$d_{31}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$d_{32}$ </tex-math></inline-formula> piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 14.1%, which was much larger than the <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high <inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula> of 1302 measured in air yielding a figure-of-merit (FOM <inline-formula> <tex-math>$= k_{t}^{2}Q_{p}$ </tex-math></inline-formula>) of 157. Based on the high <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"113-115"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Dynamic Characteristics of a Mode-Localized Resonant Accelerometer 模式局域共振加速度计的动态特性

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-26 DOI: 10.1109/JMEMS.2025.3541581

Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou

引用次数: 0

K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes 带通孔的 K 波段铌酸锂 A3 兰姆波谐振器

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-18 DOI: 10.1109/JMEMS.2025.3540960

Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen

{"title":"K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes","authors":"Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen","doi":"10.1109/JMEMS.2025.3540960","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540960","url":null,"abstract":"Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"164-173"},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0