Journal of Microelectromechanical Systems最新文献_第2页

Acoustic and Electromagnetic Co-Modeling of Piezoelectric Devices at Millimeter Wave 毫米波压电器件的声学和电磁学协同建模

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-08-01 DOI: 10.1109/JMEMS.2024.3431576

Tianyi Zhang;Yen-Wei Chang;Omar Barrera;Naveed Ahmed;Jack Kramer;Ruochen Lu

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Journal of Microelectromechanical Systems Publication Information 微机电系统杂志》出版信息

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-08-01 DOI: 10.1109/JMEMS.2024.3422734

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Near 6-GHz Sezawa Mode Surface Acoustic Wave Resonators Using AlScN on SiC 在 SiC 上使用 AlScN 的近 6-GHz Sezawa 模式声表面波谐振器

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-31 DOI: 10.1109/JMEMS.2024.3430984

Xingyu Du;Nishant Sharma;Zichen Tang;Chloe Leblanc;Deep Jariwala;Roy H. Olsson

{"title":"Near 6-GHz Sezawa Mode Surface Acoustic Wave Resonators Using AlScN on SiC","authors":"Xingyu Du;Nishant Sharma;Zichen Tang;Chloe Leblanc;Deep Jariwala;Roy H. Olsson","doi":"10.1109/JMEMS.2024.3430984","DOIUrl":"10.1109/JMEMS.2024.3430984","url":null,"abstract":"Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified fabrication, as well as suitability for high-temperature and harsh environment operation. This study presents high-frequency SAW resonators employing AlScN thin films on SiC substrates, utilizing the second SAW mode (referred to as the Sezawa mode). The resonators achieve remarkable performance, boasting a K\u0000<inline-formula> <tex-math>$^{mathrm {2}}$ </tex-math></inline-formula>\u0000 value of 5.5% at 4.7 GHz and a maximum Bode-Q (Q\u0000<inline-formula> <tex-math>$_{mathrm {max}}$ </tex-math></inline-formula>\u0000) of 911 at 4.3 GHz, outperforming previous AlScN SAW devices. Additionally, a SAW resonator with a \u0000<inline-formula> <tex-math>$0.96~mu $ </tex-math></inline-formula>\u0000m wavelength attains 5.9 GHz frequency with K\u0000<inline-formula> <tex-math>$^{mathrm {2}}$ </tex-math></inline-formula>\u0000 of 4.0% and Q\u0000<inline-formula> <tex-math>$_{mathrm {max}}$ </tex-math></inline-formula>\u0000 of 762. Our study underscores the potential of the AlScN on SiC platform for advanced radio-frequency applications. [2024-0075]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"577-585"},"PeriodicalIF":2.5,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141865032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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MEMS-Compatible X-Ray Source 与 MEMS 兼容的 X 射线源

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-30 DOI: 10.1109/JMEMS.2024.3426111

P. Urbański;T. Grzebyk

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TC f Manipulation in AlScN Nanomechanical Resonators Using Dual-Mode Parametric Excitation 利用双模参数激励操纵 AlScN 纳米机械谐振器中的 TC$f$

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-25 DOI: 10.1109/JMEMS.2024.3425798

Yue Zheng;Seyyed Mojtaba Hassani Gangaraj;Jialin Wang;Mingyo Park;Yifan Fang;Azadeh Ansari

{"title":"TC f Manipulation in AlScN Nanomechanical Resonators Using Dual-Mode Parametric Excitation","authors":"Yue Zheng;Seyyed Mojtaba Hassani Gangaraj;Jialin Wang;Mingyo Park;Yifan Fang;Azadeh Ansari","doi":"10.1109/JMEMS.2024.3425798","DOIUrl":"10.1109/JMEMS.2024.3425798","url":null,"abstract":"In this work, we present resonator temperature coefficient of frequency (TCf) manipulation method by using the Duffing nonlinearities and non-dispersive coupling in two resonance modes within the same acoustic cavity. This temperature sensing technique leverages parametric pumping with a lock-in frequency, concurrently inducing signal and idler tones with opposite TCf signs. To demonstrate temperature sensing, aluminum scandium nitride (Al\u0000<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>\u0000ScxN) (x =0.2) drumhead nanomechanical resonators with two resonance modes of vibration (0,1) and (1,1) are fabricated, and the TCf trends of the driven resonance modes and parametrically induced modes are carefully studied. A signal TC\u0000<inline-formula> <tex-math>$f_{1}$ </tex-math></inline-formula>\u0000 of −178 ppm/K and an idler TC\u0000<inline-formula> <tex-math>$f_{2}$ </tex-math></inline-formula>\u0000 of +88 ppm/K with a linear trend is experimentally measured, marking the first positive TCf measured on resonators with a negative driven-mode TCf. A one-dimensional lumped parameter model is presented to elucidate the underlying mechanisms of generating opposite TCf signs, showing an excellent match with the measured data. Furthermore, we demonstrate direct TCf manipulations through beat frequency (\u0000<inline-formula> <tex-math>$f_{b}$ </tex-math></inline-formula>\u0000) modulation, using internal mixing of the induced signals and their harmonics, which can improve the temperature tunability of the resonant system. The presented work drastically simplifies the system-level integration of the resonant sensing systems by eliminating the need for interface electronics and dual feedback loops. [2024-0080]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"620-630"},"PeriodicalIF":2.5,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141775756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Optimization of MEMS Matching Network for the Sensitivity of GHz Low-Power Wake-Up Receivers 优化 MEMS 匹配网络以提高 GHz 低功耗唤醒接收器的灵敏度

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-24 DOI: 10.1109/JMEMS.2024.3430511

Jingsong Liu;Fuhong Lin;Maoyang Qiu;Yiming Wang;Chengjie Zuo

{"title":"Optimization of MEMS Matching Network for the Sensitivity of GHz Low-Power Wake-Up Receivers","authors":"Jingsong Liu;Fuhong Lin;Maoyang Qiu;Yiming Wang;Chengjie Zuo","doi":"10.1109/JMEMS.2024.3430511","DOIUrl":"10.1109/JMEMS.2024.3430511","url":null,"abstract":"This work presents a detailed study on the design of microelectromechanical system (MEMS) matching networks (MN) for low-power wake-up receivers (WuRX) operating in GHz frequency bands. To enhance the WuRX sensitivity, a co-design theory between the MN and CMOS energy detector (ED) is proposed and derived quantitatively to give the optimal circuit topology and design under different scenarios of effective quality factor (\u0000<inline-formula> <tex-math>$Q_{eff}$ </tex-math></inline-formula>\u0000), when the MEMS resonator is modeled as an effective inductive (\u0000<inline-formula> <tex-math>$L_{eff}$ </tex-math></inline-formula>\u0000) matching element. To verify the proposed design theory as well as the high performance of MEMS MN (MMN), CMOS ED chips and various FBAR resonators of different sizes were fabricated and tested. Measurement results show that the demonstrated MMN achieves relative sensitivity gain (\u0000<inline-formula> <tex-math>$A_{sens}$ </tex-math></inline-formula>\u0000) and voltage gain (\u0000<inline-formula> <tex-math>$G_{v}$ </tex-math></inline-formula>\u0000) of 8.6 dB and 19.9 dB, respectively. The measured \u0000<inline-formula> <tex-math>$A_{sens}$ </tex-math></inline-formula>\u0000 is the highest among all reported MMNs with similar ED input capacitance operating at GHz frequencies.[2024-0090]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"596-603"},"PeriodicalIF":2.5,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141775691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Glass-Based Micro-Hotplate With Low Power Consumption and TGV Structure Through Anodic Bonding and Glass Thermal Reflow 通过阳极键合和玻璃热回流实现低功耗和 TGV 结构的玻璃基微型加热板

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-18 DOI: 10.1109/JMEMS.2024.3425846

Honglin Qian;Linxin Chen;Haotian Dai;Fanhong Chen;Shuai Liu;Xiaohui Du;Shuo Gao;Yonggang Jiang;Bing Li;Minjie Zhu;Gaopeng Xue

{"title":"Glass-Based Micro-Hotplate With Low Power Consumption and TGV Structure Through Anodic Bonding and Glass Thermal Reflow","authors":"Honglin Qian;Linxin Chen;Haotian Dai;Fanhong Chen;Shuai Liu;Xiaohui Du;Shuo Gao;Yonggang Jiang;Bing Li;Minjie Zhu;Gaopeng Xue","doi":"10.1109/JMEMS.2024.3425846","DOIUrl":"10.1109/JMEMS.2024.3425846","url":null,"abstract":"This study presents a novel microfabrication approach using anodic bonding and glass thermal reflow to fabricate glass-based micro-hotplates with low power consumption owing to the low thermal conductivity coefficient. The glass-film-suspended micro-hotplate, integrated with through glass via (TGV) structure, is achieved by anodic bonding a glass substrate with a patterned silicon (Si) wafer, followed by thermal reflow of the glass substrate around the patterned Si wafer. TGV structures, wherein conductive Si columns are inserted into the glass substrate, have the potential to replace wire-bonders for electrical interconnection with integrated circuit (IC) boards. The fabricated glass-film-suspended micro-hotplates with \u0000<inline-formula> <tex-math>$sim 20mu $ </tex-math></inline-formula>\u0000 m thickness demonstrate significantly lower power consumption and higher heating efficiency, compared to equivalent dimensions in Si-based counterparts. It is noted that the thermal conductivity coefficient of Pyrex glass should be corrected after thermal reflow, due to water evaporation and glass substrate recrystallization. Furthermore, our microfabrication approach for precisely patterning glass-based microstructures can be applicable to other glass-based MEMS devices for three-dimensional (3D) integrated microsystems.[2024-0100]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"610-619"},"PeriodicalIF":2.5,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Equidimensional Piezoelectric Micromachined Ultrasonic Transducer Array With Synchronously Improved Bandwidth and Sensitivity 同步提高带宽和灵敏度的 JMEMS Letters.1pt 等维压电微机械超声波换能器阵列

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-18 DOI: 10.1109/JMEMS.2024.3425956

Xingli Xu;Yuewu Gong;Zhuochen Wang;Yongquan Ma;Chenyang Yu;Wei Wei;Pengfei Niu;Wei Pang

{"title":"Equidimensional Piezoelectric Micromachined Ultrasonic Transducer Array With Synchronously Improved Bandwidth and Sensitivity","authors":"Xingli Xu;Yuewu Gong;Zhuochen Wang;Yongquan Ma;Chenyang Yu;Wei Wei;Pengfei Niu;Wei Pang","doi":"10.1109/JMEMS.2024.3425956","DOIUrl":"10.1109/JMEMS.2024.3425956","url":null,"abstract":"Common methods to enhance PMUT arrays’ Bandwidth (BW) may compromise the sensitivity and fill factor. This study introduces a novel PMUT array with circular suspended plate structure and variable mass load atop the membranes to establish identical cell size but different resonant frequencies, and finally achieves a broad BW, improved sensitivity and augmented fill factor. Four such kinds PMUT arrays (20 element \u0000<inline-formula> <tex-math>$times 25$ </tex-math></inline-formula>\u0000 cells) with different mass loads are studied and compared to traditional one with clamped boundary. In each design, 13 variations of cells equipped with varying-diameter mass load are integrated in one element (25 cells), resulting in a notable large BW. This design features PMUTs with an equidimensional cell size, leading a heightened filling factor compared to current wideband PMUTs with multi-size cells. Prototyped devices are fabricated and show a 1.7X improvement in membrane volume displacement, 1.5X higher ultrasound pulse-echo sensitivity and 5.2X increase in BW, from 17% to 89% @ 5.5 MHz center frequency, comparing to the traditional one. This innovative design suggests a promising solution for high sensitivity and wideband PMUT arrays, benefiting high-quality ultrasound imaging. [2024-0055]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"511-513"},"PeriodicalIF":2.5,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Rapid Circuit Phase Error Identification and Compensation Method for MEMS QMG Achieving 99.7% Reduction in ZRO Drift 用于 MEMS QMG 的快速电路相位误差识别和补偿方法，可将 ZRO 漂移降低 99.7

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-16 DOI: 10.1109/JMEMS.2024.3424810

Yi Zhou;Zhuolin Yu;Zhaorong Ke;Shaolei Ge;Shenhu Huang;Jianpeng Wang;Tong Zhou;Yan Su

{"title":"A Rapid Circuit Phase Error Identification and Compensation Method for MEMS QMG Achieving 99.7% Reduction in ZRO Drift","authors":"Yi Zhou;Zhuolin Yu;Zhaorong Ke;Shaolei Ge;Shenhu Huang;Jianpeng Wang;Tong Zhou;Yan Su","doi":"10.1109/JMEMS.2024.3424810","DOIUrl":"10.1109/JMEMS.2024.3424810","url":null,"abstract":"To solve the problem of circuit phase error induced quadrature error coupling into the rate output of the gyroscope operating in force-to-rebalance (FRB) mode, a rapid circuit phase error identification and compensation method is proposed in this paper. Firstly, the main sources of phase error in control circuit and the influence of phase error on drive mode and sense mode of micro-electro-mechanical system (MEMS) quad mass gyroscope (QMG) are theoretically analyzed. Then, a rapid circuit phase error identification and compensation method utilizing Recursive Least Squares (RLS) algorithm is proposed, achieving identification time under 1 s and 99.7% reduction in zero-rate output (ZRO) drift. This method leverages the disparity between the magnitudes of quadrature error and damping coupling error during the rapid temperature rise of the gyroscope after startup. The output of closed-loop quadrature suppression and FRB loop is used as the input of the RLS algorithm. The algorithm is carefully engineered to ascertain the phase error within 1s, thereby facilitating the expeditious rectification of the control circuit’s phase error. The effectiveness of the proposed method is verified through rotation experiments, with an identification error of less than 0.2%. The experimental results show that when using this method, the bias instability (BI) of the gyroscope is reduced from 2.218 °/h to 0.165 °/h, a total reduction of 13.4 times, while the ARW remains unchanged.","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"646-655"},"PeriodicalIF":2.5,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz C 波段碳化硅铌酸锂声表面波谐振器，6.5 千兆赫时的功率因数为 124

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2024-07-15 DOI: 10.1109/JMEMS.2024.3423768

Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu

{"title":"C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz","authors":"Tzu-Hsuan Hsu;Joshua Campbell;Jack Kramer;Sinwoo Cho;Ming-Huang Li;Ruochen Lu","doi":"10.1109/JMEMS.2024.3423768","DOIUrl":"10.1109/JMEMS.2024.3423768","url":null,"abstract":"In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (\u0000<inline-formula> <tex-math>${k}_{mathbf {t}}^{mathbf {2}}$ </tex-math></inline-formula>\u0000) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM \u0000<inline-formula> <tex-math>$= {k}_{mathbf {t}}^{mathbf {2}}cdot Q_{max}$ </tex-math></inline-formula>\u0000) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength (\u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000) reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of \u0000<inline-formula> <tex-math>$0.5lambda $ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>$1lambda $ </tex-math></inline-formula>\u0000. To perform a comprehensive study, we also designed and fabricated five additional resonators, expanding the \u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000 studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a \u0000<inline-formula> <tex-math>${k}_{mathbf {t}}^{mathbf {2}}$ </tex-math></inline-formula>\u0000 from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance. [2024-0070]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 5","pages":"604-609"},"PeriodicalIF":2.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141717547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0