Journal of Microelectromechanical Systems最新文献

{"title":"Erratum to “Thin-Film Silicon MEMS for Dynamic Mass Sensing in Vacuum and Air: Phase Noise, Allan Deviation, Mass Sensitivity and Limits of Detection”","authors":"Rui M. R. Pinto;Pedro Brito;Virginia Chu;João Pedro Conde","doi":"10.1109/JMEMS.2024.3375930","DOIUrl":"10.1109/JMEMS.2024.3375930","url":null,"abstract":"In the above article \u0000<xref>[1]</xref>\u0000, which consists in the application of phase noise theory for the prediction of MEMS mass limit of detection, an error was found in \u0000<xref>Eq. (10)</xref>\u0000. The error resulted in the overestimation of the frequency resolution \u0000<inline-formula> <tex-math>$left(Delta f_{min }right)$ </tex-math></inline-formula>\u0000 and the limit of detection \u0000<inline-formula> <tex-math>$(LoD)$ </tex-math></inline-formula>\u0000. A few other typos were also detected and we take the opportunity to correct them here, for the benefit of the reader. The \u0000<italic>errata</i>\u0000 follows below:","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 3","pages":"403-404"},"PeriodicalIF":2.7,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140200585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quadruple Mass Gyroscope Angle Random Walk Reduction Through Linearized Transduction","authors":"Ryan R. Knight;Ryan Q. Rudy;Jeffrey S. Pulskamp;Robert R. Benoit;Don L. DeVoe;Esmond Lau","doi":"10.1109/JMEMS.2023.3337636","DOIUrl":"10.1109/JMEMS.2023.3337636","url":null,"abstract":"A quadruple mass Coriolis vibratory gyroscope operating in the mode-matched condition has been redesigned with the singular focus of minimizing nonlinear transduction mechanisms, thereby allowing for angle random walk (ARW) noise reduction when operating at amplitudes higher than \u0000<inline-formula> <tex-math>$2~mu text{m}$ </tex-math></inline-formula>\u0000. This is achieved through the following steps: (i) redesigning the Coriolis mass folded flexures and shuttle springs, (ii) linearizing the antiphase coupler spring rate while maintaining parasitic modal separation, (iii) replacing parallel plate transducers with linear combs, (iv) implementing dedicated force-balanced electrostatic frequency tuners, and (v) microTorr vacuum packaging enabling operation at the thermoelastic dissipation limit of silicon. Additionally, cross-axis stiffness is reduced through folded-flexure moment balancing to further reduce ARW. By the balancing of positive and negative Duffing frequency contributions, net frequency nonlinearity was further reduced to −20 ppm. The gyroscope presented in this study has achieved an ARW of 0.0005 deg/\u0000<inline-formula> <tex-math>$surd $ </tex-math></inline-formula>\u0000hr, with an uncompensated bias instability of 0.08 deg/hr. These advancements hold promise for enhancing the performance of precision vibratory gyroscopes for navigation and North-finding applications. [2023-0144]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 3","pages":"308-321"},"PeriodicalIF":2.7,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140169186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrostatic MEMS Speakers With Embedded Vertical Actuation","authors":"Md Emran Hossain Bhuiyan;Prithviraj Palit;Siavash Pourkamali","doi":"10.1109/JMEMS.2024.3394809","DOIUrl":"10.1109/JMEMS.2024.3394809","url":null,"abstract":"In this research, micromachined silicon membranes with embedded electrostatic vertical actuator arrays capable of high out-of-plane displacement have been presented. The performance of such devices as MEMS speakers has been characterized by showing relatively high Sound Pressure level (SPL) compared to existing MEMS electrostatic speakers. Large arrays of electrostatic actuator cells, consisting of up to 10,000 cells with submicron transduction gaps, are formed on the edges of the membranes, inducing a bending moment in the membrane upon excitation. The large number of cells, along with submicron transduction gaps, allow much larger vibrational energy to be pumped into the vibrating membrane compared to the conventional electrostatic acoustic transducers, leading to higher sound output. For \u0000<inline-formula> <tex-math>$50 , mu $ </tex-math></inline-formula>\u0000m thick membranes with a device footprint of 5mm \u0000<inline-formula> <tex-math>$ times 5$ </tex-math></inline-formula>\u0000mm, a maximum SPL of 114 dB in open air was measured at a 1 cm distance, translating to an out-of- plane displacement of over \u0000<inline-formula> <tex-math>$16 , mu $ </tex-math></inline-formula>\u0000m for the membrane. The transducer strength figure of merit defined as acoustic pressure per membrane surface area per actuation voltage, for the tested devices, is calculated to be up to \u0000<inline-formula> <tex-math>$25.1 times 10^{-5}$ </tex-math></inline-formula>\u0000 Pa/mm2/V, which is over 5X higher than the highest values calculated for the existing art. [2023-0192]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"446-455"},"PeriodicalIF":2.5,"publicationDate":"2024-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141061721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multipurpose Acoustic Metamaterial Anchors for Aluminum Scandium Nitride Contour Mode Resonators","authors":"Xuanyi Zhao;Onurcan Kaya;Tommaso Maggioli;Cristian Cassella","doi":"10.1109/JMEMS.2024.3399593","DOIUrl":"10.1109/JMEMS.2024.3399593","url":null,"abstract":"We present a new design for AlScN contour-mode-resonators (CMRs) operating in the radiofrequency (RF) range. This design relies on acoustic metamaterials (AM) based lateral anchors to greatly enhance the power handling compared to conventional CMR-designs. Such anchors generate acoustic stopbands that prevent the leakage of piezo-generated acoustic energy from the resonating body into the substrate. The AM anchors reported in this work consist of the same AlScN film as in the CMRs’ active region, combined with a periodic array of SiO2 rods. Their use allows a reduction of CMRs’ thermal resistance with respect to conventional designs, and enables a significant temperature compensation. As a result, the CMRs with AM anchors reported in this work show a ~60% reduction in their Duffing coefficient with respect to conventional designs with fully-etched lateral sides, hence an improved linearity. Furthermore, when used to set the output frequency of high-power feedback loop oscillators, the CMRs with the AM anchors reported here enable a lower phase-noise compared to what achievable when employing the conventional counterparts.[2024-0053]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"473-481"},"PeriodicalIF":2.5,"publicationDate":"2024-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10532126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141063929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suspended Silicon Nitride Platforms for Thermal Sensing Applications in the Limit of Minimized Membrane Thickness","authors":"Ethan A. Scott;Hwijong Lee;John N. Nogan;Don Bethke;Peter A. Sharma;Patrick E. Hopkins;Tzu-Ming Lu;C. Thomas Harris","doi":"10.1109/JMEMS.2024.3392855","DOIUrl":"10.1109/JMEMS.2024.3392855","url":null,"abstract":"Silicon nitride has long been employed in the microfabrication of thermal sensors due to its favorable material properties and the ease with which it facilitates surface micromachining. While a variety of studies have utilized thin silicon nitride membranes for high sensitivity thermal measurements, limited reports exist on the physical characteristics of membranes and platforms in a thickness limit much less than 100 nm. Herein, we report on the development of low-stress, suspended silicon nitride platform devices that enable thermal characterization of membranes ranging from 120 nm to less than 10 nm in thickness, providing thermal conductivities as low as 1.1 W m−1 K−1 near room temperature. Applications of these platforms may enable appreciable enhancement in the performance of devices reliant upon environmental thermal isolation including bolometers, calorimeters, and gas sensors, among others. [2024-0003]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"419-426"},"PeriodicalIF":2.5,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141063949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design, Fabrication, and Characterization of High-Performance PMUT Arrays Based on Potassium Sodium Niobate","authors":"Lei Zhao;Chong Yang;Xinyue Zhang;Zhiwei You;Yipeng Lu","doi":"10.1109/JMEMS.2024.3395294","DOIUrl":"10.1109/JMEMS.2024.3395294","url":null,"abstract":"The demand for high-performance lead-free piezoelectric ultrasound transducers has grown significantly, driven by their applications in implantable, biocompatible medical devices and environmentally friendly consumer electronics. In this study, we present the design, fabrication, and characterization of arrays of lead-free (K, Na)NbO3 (KNN)-based piezoelectric micromechanical ultrasonic transducers (PMUTs) with a center frequency of 4.7 MHz in liquid and 5.85 MHz in air. High-quality KNN thin film (FWHM of 0.32°, \u0000<inline-formula> <tex-math>$e_{mathrm {31,}f}= -12$ </tex-math></inline-formula>\u0000 C/m2, \u0000<inline-formula> <tex-math>$epsilon _{r} =1200$ </tex-math></inline-formula>\u0000) was deposited via physical vapor deposition (PVD) and patterned using an optimized wet etching process with an oxide layer as a mask. Additionally, we obtained a −6 dB fractional bandwidth of 95.7% through optimizing layer stacks and transducers mutual acoustic impedance based on finite element model (FEM) and lumped element model (LEM) methods. We achieved high transmitting performance of 3.8 kPa/V at 3 cm away from a PMUT super-pixel (with an area of 0.278 mm2, consisting of \u0000<inline-formula> <tex-math>$3times 12$ </tex-math></inline-formula>\u0000 PMUTs). The measured transducer performance is comparable to previous PMUTs based on PZT (lead-included) thin films and demonstrates the potential of KNN-based PMUTs in future advanced applications. [2024-0005]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"438-445"},"PeriodicalIF":2.5,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141061713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization and Optimization of PZT-Based PMUTs With Wide Range Frequency Tuning","authors":"Yufeng Gao;Lei Zhao;Chong Yang;Yipeng Lu","doi":"10.1109/JMEMS.2024.3394509","DOIUrl":"10.1109/JMEMS.2024.3394509","url":null,"abstract":"In this paper, we present air-coupled lead-zirconate-titanate (PZT) piezoelectric micromachined ultrasonic transducers (PMUTs) which demonstrate ultra-wide frequency tuning range via controllable in-plane stress generated by DC bias voltage. A PMUT designed to have a resonant frequency of ~200kHz generates a 223kHz total frequency shift from 182.5kHz to 405.5kHz with ±35V DC bias (corresponding to 97.8% variation referring to the resonant frequency without bias), and a 124kHz frequency shift from 188kHz to 312kHz with ±10V DC bias (corresponding to 54.4% variation). The effects of DC bias tuning were further characterized by both impedance analyzer and laser Doppler vibrometer (LDV), the fluctuation of electromechanical coupling coefficient (\u0000<inline-formula> <tex-math>${k}_{mathrm {t}}^{mathrm {2}}$ </tex-math></inline-formula>\u0000) and the change of the direction of polarization of the piezoelectric layer were successfully observed. Frequency tuning along different curves of the hysteresis loop was studied, and given both reasonably good \u0000<inline-formula> <tex-math>${k}_{mathrm {t}}^{mathrm {2}}$ </tex-math></inline-formula>\u0000 (<5%)> <tex-math>$1sim 6$ </tex-math></inline-formula>\u0000V DC bias is chosen from the best option of the hysteresis loop. Furthermore, characteristics of PMUTs with different top electrode thickness were studied and summarized, and thinner top electrode was considered as an optimization method to achieve better performance for PMUT under DC bias in terms of frequency tuning. PMUTs with various frequencies were evaluated, and measurement results show a smaller tuning range of PMUTs with higher resonant frequency than those with lower resonant frequency due to the different membrane modulus, and, therefore different contributions of intrinsic stress generated by DC bias to the overall membrane modulus. [2024-0036]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"427-437"},"PeriodicalIF":2.5,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140925934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Higher Order Mode Elimination for SAW Resonators Based on LiNbO₃/SiO₂/poly-Si/Si Substrate by Si Orientation Optimization","authors":"Huiping Xu;Sulei Fu;Rongxuan Su;Peisen Liu;Boyuan Xiao;Shuai Zhang;Rui Wang;Cheng Song;Fei Zeng;Weibiao Wang;Feng Pan","doi":"10.1109/JMEMS.2024.3369639","DOIUrl":"10.1109/JMEMS.2024.3369639","url":null,"abstract":"Lithium-niobate-on-insulator (LNOI) platform has emerged as a promising solution for fabricating wideband and low-loss surface acoustic wave (SAW) filters. However, it simultaneously excites higher order modes, causing out-of-band (OoB) spurious responses. In this work, the elimination condition for higher order modes in LiNbO3 (LN)/SiO2/poly-Si/Si structure was summarized from analyzing the coupling mechanism between the velocities of shear bulk acoustic waves (\u0000<inline-formula> <tex-math>$V_{mathrm {S}}$ </tex-math></inline-formula>\u0000) of Si and that of higher order mode (\u0000<inline-formula> <tex-math>$V_{mathrm {p-h}}$ </tex-math></inline-formula>\u0000). According to the elimination condition of \u0000<inline-formula> <tex-math>$V_{mathrm {p-h}}$ </tex-math></inline-formula>\u0000 exceeding \u0000<inline-formula> <tex-math>$V_{mathrm {S}}$ </tex-math></inline-formula>\u0000, meticulously selecting the crystal plane and propagation angle \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000 of Si to obtain desired \u0000<inline-formula> <tex-math>$V_{mathrm {S}}$ </tex-math></inline-formula>\u0000 is necessary. First, the resonators built on \u0000<inline-formula> <tex-math>$32^{circ }Y$ </tex-math></inline-formula>\u0000-\u0000<inline-formula> <tex-math>$X$ </tex-math></inline-formula>\u0000 LN/SiO2/poly-Si/Si platforms with typical Si (100), Si (110) and Si (111) substrates were studied by simulation, which reveals that Si (110) manifests the optimal suppression capacity with \u0000<inline-formula> <tex-math>$alpha _{110}$ </tex-math></inline-formula>\u0000 window of \u0000<inline-formula> <tex-math>$18^{circ }-60^{circ }$ </tex-math></inline-formula>\u0000, followed by the Si (111) plane of \u0000<inline-formula> <tex-math>$alpha _{111}= 14^{circ }-36^{circ }$ </tex-math></inline-formula>\u0000. Si (100) substrate can hardly suppress higher order modes. Furthermore, resonators were designed and prepared on the above three Si planes. In coherence with the theoretical prediction, the resonators built on Si (135°, 90°, 45°) substrate can effectively eliminate the OoB ripples, while the resonators based on Si (0°, 0°, 45°) and Si (135°, 54.74°, 60°) substrates both excite the higher order modes, whose maximum admittance ratios (AR\u0000<inline-formula> <tex-math>$_{mathrm {h}}$ </tex-math></inline-formula>\u0000) are 15.0 dB and 19.9 dB, respectively. This work demonstrates a valid methodology for constructing spurious-free filters meeting 5G requirements. [2023-0212]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"163-173"},"PeriodicalIF":2.7,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 3 Degrees-of-Freedom Electrothermal Micro-Positioner for Optical Chip-to-Chip Alignment","authors":"Almur A. S. Rabih;Seyedfakhreddin Nabavi;Michaël Ménard;Frederic Nabki","doi":"10.1109/JMEMS.2024.3371829","DOIUrl":"10.1109/JMEMS.2024.3371829","url":null,"abstract":"This article proposes an electrothermal three-degrees-of-freedom (3-DOF) micro-positioner equipped with a waveguide path, which can potentially be used for chip-to-chip alignment in photonic integrated circuits. The micro-positioner provides translational displacements along the x-, y- and z- axes with manageable levels of cross-sensitivity between axes. A fabricated prototype provides displacements of \u0000<inline-formula> <tex-math>$pm 3.35~mu text{m}$ </tex-math></inline-formula>\u0000 at 105 mW along the x-axis, and \u0000<inline-formula> <tex-math>$+4.5~mu text{m}$ </tex-math></inline-formula>\u0000 at 140 mW along the y-axis. Moreover, \u0000<inline-formula> <tex-math>$+7~mu text{m}$ </tex-math></inline-formula>\u0000 of out-of-plane displacement is achieved along the z-axis when 210 mW is applied to the x-axis actuators to buckle the structure. The AC response of the micro-positioner shows that the fundamental resonance mode occurs at 18.8 kHz. [2023-0208]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"260-273"},"PeriodicalIF":2.7,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of Hemispherical Shell Resonator Structure Based on Thermoelastic Dissipation","authors":"Xiaoyan Sun;Haikuan Chen;Zhouwei He;Haoning Zheng;Ji’an Duan;Youwang Hu","doi":"10.1109/JMEMS.2024.3360460","DOIUrl":"10.1109/JMEMS.2024.3360460","url":null,"abstract":"This paper reports a method to optimize the structure of a hemispherical shell resonator by reducing the thermoelastic dissipation. In accordance with the thermoelastic damping theory, we set up a thermal insulation structure to change the heat conduction distance to improve the thermoelastic quality factor. And according to the distribution of elastic strain energy on the resonator, we set up the thermal insulating cavities and thermal insulating layers at the top and rim of the resonator to change the heat conduction distance, respectively. The vibration characteristics of the four new resonators are compared with the conventional resonator by finite element calculation, and the new structural resonators are fabricated with the optimal parameter. We measured that the quality factor (\u0000<inline-formula> <tex-math>$Q$ </tex-math></inline-formula>\u0000-factor) of the optimized resonator was improved by 13.8 times than that of the original structural resonator. It is also found that by adjusting the insulation structure, not only the thermoelastic quality factor of the resonator can be improved, but also the modal frequency of the resonator can be adjusted, which is able to realize the fine control of the vibration characteristics of the resonator. [2023-0168]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"133-142"},"PeriodicalIF":2.7,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140043917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}