Journal of Microelectromechanical Systems最新文献_第10页

A Near-Zero Thermoelectric RF Power Sensor for High Dynamic Range Applications 用于高动态范围应用的近零热电射频功率传感器

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-11-16 DOI: 10.1109/JMEMS.2023.3330574

Zhiqiang Zhang;Runqi Gu;Yifei Jiang;Yan Cui;Chunhua Cai

引用次数: 0

Frequency Selection in a MEMS Flexural Beam Resonator by Electrostatic Actuation 通过静电致动实现微机电系统挠性波束谐振器的频率选择

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-11-16 DOI: 10.1109/JMEMS.2023.3331701

Mohammad Kazemi;Seyedfakhreddin Nabavi;Mathieu Gratuze;Frederic Nabki

{"title":"Frequency Selection in a MEMS Flexural Beam Resonator by Electrostatic Actuation","authors":"Mohammad Kazemi;Seyedfakhreddin Nabavi;Mathieu Gratuze;Frederic Nabki","doi":"10.1109/JMEMS.2023.3331701","DOIUrl":"https://doi.org/10.1109/JMEMS.2023.3331701","url":null,"abstract":"The utilization of MEMS resonators in microelectronics has garnered significant attention, given their crucial role in a multitude of applications, including timing and sensing. Among the various types of resonators, tunable resonators are particularly noteworthy, as they possess the capability of dynamically adjusting their resonant frequency. Accordingly, this work presents an innovative method for tuning the resonant frequency of beam resonators that are resonating out-of-plane by using a pair of electrostatic actuators. The proposed mechanism focuses on increasing the stiffness of the anchoring structure, which ultimately results in a significant increase in the resonant frequency of the beam resonator. This approach relies on the use of electrostatic actuators which are positioned in close proximity to the anchors and are pulled into the device from a distance of \u0000<inline-formula> <tex-math>$mathrm {2 ~mu text {m} }$ </tex-math></inline-formula>\u0000. The method is investigated using finite element simulation and measurement results from fabricated devices. The results indicate significant frequency tuning that reaches 27% and 51% of the initial resonant frequency by activation of one and both electrostatic actuators, respectively. [2023-0095]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":2.7,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10319990","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139676287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impedance Sensing in CMOS-Embedded Microfluidics Using BEOL Electrodes 使用 BEOL 电极在 CMOS 嵌入式微流体中进行阻抗传感

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-11-03 DOI: 10.1109/JMEMS.2023.3326973

Wei-Yang Weng;Jun-Chau Chien

引用次数: 0

Theoretical Analysis and Verification on ScAlN-Based Piezoelectric Micromachined Ultrasonic Transducers With DC Bias 带直流偏压的 ScAlN 基压电微机械超声波传感器的理论分析与验证

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-24 DOI: 10.1109/JMEMS.2023.3323954

Zekai Wang;Wenjuan Liu;Bohao Hu;Yuhao Xiao;Chaoxiang Yang;Liangyu Lu;Yao Cai;Yan Liu;Chengliang Sun

{"title":"Theoretical Analysis and Verification on ScAlN-Based Piezoelectric Micromachined Ultrasonic Transducers With DC Bias","authors":"Zekai Wang;Wenjuan Liu;Bohao Hu;Yuhao Xiao;Chaoxiang Yang;Liangyu Lu;Yao Cai;Yan Liu;Chengliang Sun","doi":"10.1109/JMEMS.2023.3323954","DOIUrl":"10.1109/JMEMS.2023.3323954","url":null,"abstract":"Applying a DC bias can effectively tune the performance of a piezoelectric ultrasonic micromachined transducer (PMUT) to meet the requirements in multiple application scenarios. However, the effect of DC bias on various parameters of PMUT has not been systematically analyzed and verified. In this work, a theoretical model of scandium-doped aluminum nitride (ScAlN) based PMUT under different DC biases is obtained by extracting new effective coefficients and coupling the DC bias into the vibration functions. The measurement results show that the resonant frequency, center displacement, −3-dB bandwidth, and electromechanical coupling coefficient of ScAlN-based PMUT all change linearly when the DC bias is swept from −90-V to 90-V. Moreover, the sensitivity of resonant frequency is 185-Hz/V, and the effective frequency range is 32.81-kHz. The electromechanical coupling coefficient increased more than 14.18 % at 40-V compared to −40-V. The theoretical model is verified with the experimental measurement and indicates that the performance of ScAlN-based PMUT is tunable through DC bias, which has considerable application potential in application scenarios such as data communication, photoacoustic imaging, pulse-echo positioning, and phased array. [2023-0111]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":2.7,"publicationDate":"2023-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135156825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Fabrication of a Micropillar-Pumped Polymer Loop Heat Pipe 微柱泵浦聚合物环路热管的设计与制造

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-20 DOI: 10.1109/JMEMS.2023.3318413

Masaaki Hashimoto;Taiga Kawakami;Abdulkareem Alasli;Ryobu Nomura;Hosei Nagano;Ai Ueno

引用次数: 0

Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz With 2.38 dB IL and 18.2% FBW 23.5 GHz铌酸锂薄膜声滤波器，IL为2.38 dB, FBW为18.2%

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-20 DOI: 10.1109/JMEMS.2023.3314666

Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu

引用次数: 6

Hybrid MEMS Actuator With 3 Degrees-of- Freedom for Efficient Planar Optical Switching 用于高效平面光开关的三自由度混合MEMS驱动器

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-20 DOI: 10.1109/JMEMS.2023.3322223

Suraj Sharma;Seyedfakhreddin Nabavi;Almur Abdelkreem Saeed Rabih;Michaël Ménard;Frederic Nabki

{"title":"Hybrid MEMS Actuator With 3 Degrees-of- Freedom for Efficient Planar Optical Switching","authors":"Suraj Sharma;Seyedfakhreddin Nabavi;Almur Abdelkreem Saeed Rabih;Michaël Ménard;Frederic Nabki","doi":"10.1109/JMEMS.2023.3322223","DOIUrl":"10.1109/JMEMS.2023.3322223","url":null,"abstract":"This work demonstrates a hybrid MEMS actuator platform that combines electrostatic and piezoelectric actuators to displace a suspended MEMS platform along 3 degrees-of-freedom (DOF). The prototype MEMS actuator tested produces maximum displacements of \u0000<inline-formula> <tex-math>$8.8 mu text{m}$ </tex-math></inline-formula>\u0000 along the positive X-axis, and \u0000<inline-formula> <tex-math>$8.5 mu text{m}$ </tex-math></inline-formula>\u0000 along the negative X-axis, with digital control. Analog control produces maximum displacements of \u0000<inline-formula> <tex-math>$5.9 mu text{m}$ </tex-math></inline-formula>\u0000 along the positive X-axis, and \u0000<inline-formula> <tex-math>$5.8 mu text{m}$ </tex-math></inline-formula>\u0000 along the negative X-axis. It can also provide \u0000<inline-formula> <tex-math>$2.2 mu text{m}$ </tex-math></inline-formula>\u0000 of in-plane displacement along the negative Y-axis with analog control. The electrostatic actuator used for displacement along the negative Y-axis also compensates for any out-of-plane misalignment between the suspended MEMS platform and fixed silicon due to the significant residual stress caused by deposited piezoelectric material layers. In addition, up to 550 nm of misalignment compensation using the electrostatic actuator before electrostatic pull-in is demonstrated. The piezoelectric actuator provides fine alignment capability with a maximum out-of-plane displacement of 200 nm and 100 nm with analog control along the positive and negative Z-axis, respectively. This hybrid MEMS actuator can be integrated with channel waveguides for efficient planar optical switching applications. [2023-0121]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":2.7,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135056718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride 溅射氮化钪铝的毫米波薄膜体声谐振器

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-20 DOI: 10.1109/JMEMS.2023.3321284

Sinwoo Cho;Omar Barrera;Pietro Simeoni;Emily N. Marshall;Jack Kramer;Keisuke Motoki;Tzu-Hsuan Hsu;Vakhtang Chulukhadze;Matteo Rinaldi;W. Alan Doolittle;Ruochen Lu

{"title":"Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride","authors":"Sinwoo Cho;Omar Barrera;Pietro Simeoni;Emily N. Marshall;Jack Kramer;Keisuke Motoki;Tzu-Hsuan Hsu;Vakhtang Chulukhadze;Matteo Rinaldi;W. Alan Doolittle;Ruochen Lu","doi":"10.1109/JMEMS.2023.3321284","DOIUrl":"10.1109/JMEMS.2023.3321284","url":null,"abstract":"This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3 Al0.7 N on Al on Si carrier wafer. The resonator achieves electromechanical coupling (\u0000<inline-formula> <tex-math>${k} ^{2}$ </tex-math></inline-formula>\u0000) of 7.0% and quality factor (\u0000<inline-formula> <tex-math>${Q}$ </tex-math></inline-formula>\u0000) of 62 for the first-order symmetric (S1) mode at 21.4 GHz, along with \u0000<inline-formula> <tex-math>${k} ^{2}$ </tex-math></inline-formula>\u0000 of 4.0% and \u0000<inline-formula> <tex-math>${Q}$ </tex-math></inline-formula>\u0000 of 19 for the third-order symmetric (S3) mode at 55.4 GHz, showing higher figures of merit (FoM, \u0000<inline-formula> <tex-math>${k} ^{2} cdot {Q}$ </tex-math></inline-formula>\u0000) than reported AlN/ScAlN-based mmWave acoustic resonators. The ScAlN quality is identified by transmission electron microscopy (TEM) and X-ray diffraction (XRD), identifying the bottlenecks in the existing piezoelectric-metal stack. Further improvement of ScAlN/AlN-based mmWave acoustic resonators calls for better crystalline quality from improved thin-film deposition methods. [2023-0151]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":2.7,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135057047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A Low-Noise Piezoelectric MEMS Oscillator Based on a Flexural Mode Membrane Resonator Array Toward In-Air Resonant Sensors 基于弯曲模膜谐振器阵列的低噪声压电MEMS振荡器

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-12 DOI: 10.1109/JMEMS.2023.3321715

Hexu Luo;Menglun Zhang;Yi Gong;Yuan Ning;Xuejiao Chen;Quanning Li;Wei Pang

{"title":"A Low-Noise Piezoelectric MEMS Oscillator Based on a Flexural Mode Membrane Resonator Array Toward In-Air Resonant Sensors","authors":"Hexu Luo;Menglun Zhang;Yi Gong;Yuan Ning;Xuejiao Chen;Quanning Li;Wei Pang","doi":"10.1109/JMEMS.2023.3321715","DOIUrl":"10.1109/JMEMS.2023.3321715","url":null,"abstract":"Flexural mode MEMS resonators are ideal candidates for resonant microsensors. However, their high motional resistance in air restricts the performance of corresponding oscillators and consequently the sensor performance. In this work, we report a piezoelectric MEMS oscillator based on a flexural mode membrane resonator array for in-air resonant sensors. Array design and piezoelectric transduction of the membrane resonators facilitate a low motional resistance and a high power handling capability. At the resonator level, the electrode pattern is optimized to further reduce the motional resistance, and the nonlinearity of the resonator is analyzed to fully exploit its high power handling for oscillator design. At the oscillator level, transimpedance and Pierce circuits are designed, analyzed and characterized. Theoretical calculations well fit measured results, both for the white and 1/f2 phase noise of the transimpedance oscillator and for the Allan deviation below an integration time of 0.1 s of the Pierce oscillator. The Pierce oscillator achieves a phase noise of −119 dBc/Hz at a 1 kHz offset and a −151 dBc/Hz noise floor. The frequency resolution of the Pierce oscillator reaches 0.024 Hz. To the best of our knowledge, the measured phase noise and frequency resolution are the best among reported low-frequency piezoelectric MEMS oscillators for in-air resonant sensors. The proposed solution could be applied for a variety of sensing scenarios, such as mass, pressure, acceleration and strain sensing. A theoretical resolution as low as 15 \u0000<inline-formula> <tex-math>$text{p}varepsilon $ </tex-math></inline-formula>\u0000 is expected if it is utilized as a strain sensor. [2023-0128]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":null,"pages":null},"PeriodicalIF":2.7,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136303225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phononic Graded Meta-MEMS for Elastic Wave Amplification and Filtering 弹性波放大与滤波的声子梯度元mems

IF 2.7 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2023-10-12 DOI: 10.1109/JMEMS.2023.3320198

Federico Maspero;Jacopo Maria De Ponti;Luca Iorio;Annachiara Esposito;Riccardo Bertacco;Andrea di Matteo;Alberto Corigliano;Raffaele Ardito

引用次数: 0