Journal of Microelectromechanical Systems最新文献_第6页

Thermally Stable, BEOL-Configured MEMS-Based One-Time Programmable (OTP) Memory for Cryogenic Embedded Application 用于低温嵌入式应用的热稳定，beol配置的mems一次性可编程（OTP）存储器

IF 3.1 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-16 DOI: 10.1109/JMEMS.2025.3563940

Khanjan Miteshkumar Joshi;Manu Garg;Nitish Kumar;Yi Chiu;Pushpapraj Singh

{"title":"Thermally Stable, BEOL-Configured MEMS-Based One-Time Programmable (OTP) Memory for Cryogenic Embedded Application","authors":"Khanjan Miteshkumar Joshi;Manu Garg;Nitish Kumar;Yi Chiu;Pushpapraj Singh","doi":"10.1109/JMEMS.2025.3563940","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3563940","url":null,"abstract":"In this letter, we demonstrate a MEMS-based one-time programmable(OTP) memory cell integrated into the back-end-of-line (BEOL) layers of a TSMC <inline-formula> <tex-math>$0.35~mu $ </tex-math></inline-formula>m 2P4M CMOS process, designed for operation down to 4 K. This novel design eliminates the need for fusing currents, relying instead on surface-adhesion phenomena for programming. The memory cells operate with a low read voltage of 0.05 V and read current of <inline-formula> <tex-math>$80~mu $ </tex-math></inline-formula>A, ensuring low power consumption and minimal heat generation (~2.8 K). The read resistance ranges from 0.5 to 5.5 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> in the logic ‘1’ (ON-state) and ~2.4 T<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> in the logic ‘0’ (OFF-state), achieving an on-off ratio in the order of <inline-formula> <tex-math>$10^{9}$ </tex-math></inline-formula>. The switching energy is limited to 0.5–2.6 pJ, with a demonstrated memory retention of 4 hours at 300, 120, and 4 K. These features make it highly suitable for storing micro-operations permanently in cryogenic embedded applications.[2025-0028]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"362-364"},"PeriodicalIF":3.1,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a MEMS Thermal Flow Sensor With High Reliability and Universality for Various Gases 具有高可靠性和通用性的MEMS热流量传感器的研制

IF 3.1 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-16 DOI: 10.1109/JMEMS.2025.3564169

Wei Tian;Yuzhe Lin;Lianggong Wen;Maosen Xu;Jinghua Lin;Guoqing Hu;Jifang Tao

{"title":"Development of a MEMS Thermal Flow Sensor With High Reliability and Universality for Various Gases","authors":"Wei Tian;Yuzhe Lin;Lianggong Wen;Maosen Xu;Jinghua Lin;Guoqing Hu;Jifang Tao","doi":"10.1109/JMEMS.2025.3564169","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3564169","url":null,"abstract":"This paper presents an improved calorimetric MEMS flow sensor to meet the needs of large-scale industrial applications such as semiconductor and photovoltaics. Reliability and universality are considered the most critical factors for these fields, for which the porous silicon-based sensor was designed, fabricated and tested rigorously with eight gases. The results demonstrated that the sensor maintained nearly identical zero-flow outputs across various static gas environments (using N2 as the baseline, with deviations ranging from 0.01%FS for CO to 0.69%FS for He). Moreover, well-defined conversion coefficients were established between any two gases. This characteristic enables the practical application of N2-calibrated sensors to other gases through coefficient conversion, achieving an accuracy error within 2.0%FS. In addition, the sensor can survive and maintain its sensing capabilities even during continuous SiH4 combustion reactions and under heavy pollution, whereas the suspended membrane-based sensor ruptures. This innovative work makes MEMS flow sensors more convenient and reliable in complex industrial applications, potentially replacing traditional flow sensors based on capillary structures.[2025-0009]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"389-398"},"PeriodicalIF":3.1,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of LCE Microactuator Arrays Through Soft Lithography With Surface Alignment 采用表面对准软光刻技术制备LCE微致动器阵列

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-13 DOI: 10.1109/JMEMS.2025.3546852

Ke Li;Jae-Jun Kim;Jayer Fernandes;Hongrui Jiang

引用次数: 0

Study on Mechanical Cross-Axis Coupling for Non-Follow-Up Tip-Tilt Vertical Comb-Drive Micromirror 非随动倾斜-倾斜垂直梳状驱动微镜机械跨轴耦合研究

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-11 DOI: 10.1109/JMEMS.2025.3546280

Yuhu Xia;Biyun Ling;Xiaoyue Wang;Yaming Wu

{"title":"Study on Mechanical Cross-Axis Coupling for Non-Follow-Up Tip-Tilt Vertical Comb-Drive Micromirror","authors":"Yuhu Xia;Biyun Ling;Xiaoyue Wang;Yaming Wu","doi":"10.1109/JMEMS.2025.3546280","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3546280","url":null,"abstract":"This paper presents a quantitative analysis of mechanical cross-axis coupling in tip-tilt (TT) scanning of vertical comb-drive (VCD) micromirror in detail. In the proposed non-follow-up (NFU) TT VCD micromirror design, one set of vertical combs (VCs) is fixed on the wiring substrate, while the other VC set can rotate along with the gimbal, the springs, and the reflective mirror. Such design brings not only high fabrication feasibility but also convenience for driving signal fan-out of micromirror array (MMA). The fabrication process is adopted on a double-silicon-on-insulator (D-SOI) wafer and a hollow copper (Cu) through-silicon-via (TSV) wiring substrate through bulk silicon micromachining. Based on this, a mechanical cross-axis coupling model is developed by introducing mechanical cross-axis coupling factors and plugging the deflection-dependent VC capacitance expressions into TT scanning angle solution, in order to evaluate influence from VCD actuators and series springs of gimbaled scanning structure. The calculation indicates that inner-axis rotation has little influence on outer-axis rotation, while the opposite is in direct relation to the number of VC units that contribute to VC capacitance calculation. A comparison between calculation with measured results obtained from fabricated devices is also conducted, which shows a good agreement. Additionally, we have investigated the decoupling method of the proposed model to evaluate its capability of biaxial driving voltage estimation. Furthermore, to overcome the drawbacks of the NFU TT scanning structure, a simplified calibration methodology is proposed as the extended application of the proposed model, featuring both lowering calibration workload and guaranteeing TT scanning accuracy. [2024-0214]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"283-296"},"PeriodicalIF":2.5,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward a Tunable AlN-Based Piezoelectric MEMS Microphone: Design, Characterization, and Analysis 基于aln的可调谐压电MEMS麦克风：设计、表征与分析

IF 3.1 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-09 DOI: 10.1109/JMEMS.2025.3558897

Zhuoyue Zheng;Xinyu Wu;Yuan Wang;Huahuang Luo;Qingqing Ke;Chen Wang;Michael Kraft;Rui P. Martins;Pui In Mak

{"title":"Toward a Tunable AlN-Based Piezoelectric MEMS Microphone: Design, Characterization, and Analysis","authors":"Zhuoyue Zheng;Xinyu Wu;Yuan Wang;Huahuang Luo;Qingqing Ke;Chen Wang;Michael Kraft;Rui P. Martins;Pui In Mak","doi":"10.1109/JMEMS.2025.3558897","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3558897","url":null,"abstract":"This work introduces a novel tunable piezoelectric MEMS microphone, featuring a fully clamped membrane and dual-sensing electrodes. The device achieves a baseline sensitivity of -39.31 dB, with tunability enabled by a DC tuning mechanism. The key innovations of this subject include: 1) a discrete electrode design enabling simultaneous tuning of sensitivity and resonant frequency while preserving acoustic sensing functionality; 2) utilizing the reverse piezoelectric effect to achieve large tunable ranges with minimal tuning voltages; and 3) a cost-effective performance tuning methodology that eliminates the need for structural modifications; 4) ascertain the tuning mechanism. Furthermore, a refined equivalent circuit model provides insights into the electromechanical behavior of the device, enabling the optimization of tunable microphones and acoustic transducers. Experimental results demonstrate the tuning ability successfully. The acoustic experiment shows that the output amplitude can be changed by up to 182.18% under ±0.5 V DC tuning under 1 kHz acoustic input. The electrical experiment reveals a maximum resonant frequency change of 6.85% with ±10 V DC. The proposed microphone is a promising candidate to be employed in many next-generation audio applications, such as adaptive voice systems, AI-driven speech recognition, and noise cancellation.[2025-0005]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"432-442"},"PeriodicalIF":3.1,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144757681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A MEMS Resonator Coupled With a Resistive Sensor for Improved Sensing and Actuation 一种与电阻式传感器耦合的MEMS谐振器，用于改进传感和驱动

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-06 DOI: 10.1109/JMEMS.2025.3545087

Hasan Albatayneh;Mohammad Matahen;Aaron Kishlock;Danling Wang;Mohammad I. Younis

引用次数: 0

Design, Fabrication, and Characterization of High-Stiffness Suspended Microcalorimeters With Nanowatt Power Resolution 具有纳瓦功率分辨率的高刚度悬浮微热计的设计、制造和表征

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-03-05 DOI: 10.1109/JMEMS.2025.3543201

Cedric Shaskey;Amun Jarzembski;Milo Birdwell;Keunhan Park

引用次数: 0

MEMS Air-Damped Isolator for Dual-Axis Micromirrors: Broad-Range Frequency Vibration Isolation 用于双轴微镜的MEMS气阻尼隔振器：宽频率隔振

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-27 DOI: 10.1109/JMEMS.2025.3543166

Longqi Ran;Wu Zhou;Jiangbo He;Jiahao Wu;Yan Wang;Xuhui Gong

{"title":"MEMS Air-Damped Isolator for Dual-Axis Micromirrors: Broad-Range Frequency Vibration Isolation","authors":"Longqi Ran;Wu Zhou;Jiangbo He;Jiahao Wu;Yan Wang;Xuhui Gong","doi":"10.1109/JMEMS.2025.3543166","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3543166","url":null,"abstract":"The fracture failure of dual-axis micromirrors under the AEC-Q100 qualification test could not be mitigated by structural designs alone due to the need for compatibility in bending and torsional stiffness. To address this, a passive MEMS vibration isolator was proposed to protect the micromirrors within a broad frequency range of 20 Hz to 1200 Hz, unlike conventional designs limited to a fixed frequency. The proposed method was based on a two-degree-of-freedom (DOF) micromirror-isolator system, in contrast to the single-DOF systems employed in existing methods. The isolator’s stiffness was matched to the micromirror’s stiffness to maximize the mirror plane’s movement, and an air damping mechanism was incorporated using a <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>m gap to control the dynamic response time. The designed isolator was fabricated using a novel SOI-on-glass process and tested on a high-precision vibration shaker equipped with a laser Doppler vibrometer. Results showed that the proposed isolator attenuated vibration amplitude by 25.55 dB, closely aligning with the design value of 24.89 dB. Additionally, an automotive-grade vibration test demonstrated successful isolation under a 50g vibration within the 20 Hz to 1200 Hz frequency range, without introducing parasitic modes that could disrupt the micromirror’s operational modes.[2024-0220]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"260-267"},"PeriodicalIF":2.5,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10907265","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers 基于单相单向换能器的声延迟线频带分析

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-26 DOI: 10.1109/JMEMS.2025.3528522

Yang Li;Jiawei Li;Tao Wu

{"title":"Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers","authors":"Yang Li;Jiawei Li;Tao Wu","doi":"10.1109/JMEMS.2025.3528522","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3528522","url":null,"abstract":"This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection (<inline-formula> <tex-math>$Gamma $ </tex-math></inline-formula>) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (<inline-formula> <tex-math>${f} _{c}$ </tex-math></inline-formula>) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length (<inline-formula> <tex-math>$L_{g}$ </tex-math></inline-formula>) ranging from 50 to <inline-formula> <tex-math>$300~mu $ </tex-math></inline-formula>m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"194-203"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N 在 Al0.7Sc0.3N 中实现高机电耦合径向扩展模式谐振器

IF 2.5 3区工程技术

Journal of Microelectromechanical Systems Pub Date : 2025-02-26 DOI: 10.1109/JMEMS.2025.3542363

Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson

{"title":"High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N","authors":"Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson","doi":"10.1109/JMEMS.2025.3542363","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3542363","url":null,"abstract":"This work reports aluminum scandium nitride (Al<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula>, when compared to the more traditionally utilized LE and WE modes. The higher <inline-formula> <tex-math>${k} _{t}^{2}$ </tex-math></inline-formula> is due to the constructive addition of the <inline-formula> <tex-math>$d_{31}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$d_{32}$ </tex-math></inline-formula> piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 14.1%, which was much larger than the <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high <inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula> of 1302 measured in air yielding a figure-of-merit (FOM <inline-formula> <tex-math>$= k_{t}^{2}Q_{p}$ </tex-math></inline-formula>) of 157. Based on the high <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"113-115"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0