18 GHz Solidly Mounted Resonator in Scandium Aluminum Nitride on SiO₂/Ta₂O₅ Bragg Reflector

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Omar Barrera;Nishanth Ravi;Kapil Saha;Supratik Dasgupta;Joshua Campbell;Jack Kramer;Eugene Kwon;Tzu-Hsuan Hsu;Sinwoo Cho;Ian Anderson;Pietro Simeoni;Jue Hou;Matteo Rinaldi;Mark S. Goorsky;Ruochen Lu
{"title":"18 GHz Solidly Mounted Resonator in Scandium Aluminum Nitride on SiO₂/Ta₂O₅ Bragg Reflector","authors":"Omar Barrera;Nishanth Ravi;Kapil Saha;Supratik Dasgupta;Joshua Campbell;Jack Kramer;Eugene Kwon;Tzu-Hsuan Hsu;Sinwoo Cho;Ian Anderson;Pietro Simeoni;Jue Hou;Matteo Rinaldi;Mark S. Goorsky;Ruochen Lu","doi":"10.1109/JMEMS.2024.3472615","DOIUrl":null,"url":null,"abstract":"This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient (\n<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>\n) of 2.0%, high series quality factor (\n<inline-formula> <tex-math>$Q_{s}$ </tex-math></inline-formula>\n) of 156, shunt quality factor (\n<inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula>\n) of 142, and maximum Bode quality factor (\n<inline-formula> <tex-math>$Q_{max}$ </tex-math></inline-formula>\n) of 210. The third-order harmonics at 59.64 GHz is also observed with \n<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>\n around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.[2024-0120]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"711-716"},"PeriodicalIF":2.5000,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10718726/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient ( $k^{2}$ ) of 2.0%, high series quality factor ( $Q_{s}$ ) of 156, shunt quality factor ( $Q_{p}$ ) of 142, and maximum Bode quality factor ( $Q_{max}$ ) of 210. The third-order harmonics at 59.64 GHz is also observed with $k^{2}$ around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.[2024-0120]
18 GHz固体安装在SiO₂/Ta₂O₅Bragg反射器上的氮化钪铝谐振器
这项工作报道了一个18.64 GHz的声学固体安装谐振器(SMR),是报道的最高工作频率之一。该器件是在二氧化硅(SiO2)和五氧化二钽(Ta2O5)上的氮化铝钪(ScAlN)硅片上的布拉格反射器。利用x射线反射率(XRR)和高分辨率x射线衍射(HRXRD)对叠层进行了分析。谐振器的耦合系数$k^{2}$为2.0%,高串联品质因数$Q_{s}$为156,分流品质因数$Q_{p}$为142,最大波德品质因数$Q_{max}$为210。59.64 GHz的三阶谐波也被观测到,$k^{2}$约为0.6%,Q约为40。经过进一步发展,所报道的声学谐振器平台可以在未来的频率范围3 (FR3)波段实现各种前端信号处理功能,例如滤波器和振荡器。[2024-0120]
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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