发布求助
文献互助 智能选刊 最新文献

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.最新文献

筛选
英文 中文
Impact of deep sub-ambient cooling on GSI interconnect performance 深次环境冷却对GSI互连性能的影响
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499961
A. Naeemi, J. Meindl
{"title":"Impact of deep sub-ambient cooling on GSI interconnect performance","authors":"A. Naeemi, J. Meindl","doi":"10.1109/IITC.2005.1499961","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499961","url":null,"abstract":"It is shown that sub-ambient cooling can enhance the performance of GSI interconnects significantly if their design is re-optimized accordingly. Liquid-air cooling improves the latency of local interconnects significantly (e.g. 35% and 60% for 20 /spl mu/m long interconnects at 45 nm and 22 nm technology nodes, respectively), and makes semiglobal interconnects more than 150% faster. It also increases the number of bits per second that global interconnects can potentially transfer by more than 100%.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132177665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Surface acoustic waves as a technique for in-line detection of processing damage to low-k dielectrics 表面声波作为一种在线检测低k介质加工损伤的技术
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499988
F. Iacopi, S. Brongersma, A. Mazurenko, H. Struyf, G. Mannaert, Y. Travaly, A. Maznev, T. Abell, J. Tower, K. Maex
{"title":"Surface acoustic waves as a technique for in-line detection of processing damage to low-k dielectrics","authors":"F. Iacopi, S. Brongersma, A. Mazurenko, H. Struyf, G. Mannaert, Y. Travaly, A. Maznev, T. Abell, J. Tower, K. Maex","doi":"10.1109/IITC.2005.1499988","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499988","url":null,"abstract":"A surface acoustic wave technique was successfully applied for monitoring modification/damage of low-k dielectrics resulting from plasma-based patterning in a non-destructive and non-contact fashion. It is shown that this technique can be used to assess and compare dielectric damage, due to different processing conditions, in patterned structures.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126306803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-density probe substrate for testing optical interconnects 用于测试光互连的高密度探针衬底
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499962
H. Thacker, O. Ogunsola, M. Bakir, J. Meindl
{"title":"High-density probe substrate for testing optical interconnects","authors":"H. Thacker, O. Ogunsola, M. Bakir, J. Meindl","doi":"10.1109/IITC.2005.1499962","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499962","url":null,"abstract":"The design, fabrication, and demonstration of a high-density probe substrate (100 /spl mu/m pitch) for testing chips with electrical and optical input/output (I/O) interconnects are presented. The primary purpose of this substrate is to provide nondamaging, temporary interconnections between the device-under-test (DUT) and the automated test equipment (ATE) during wafer probing - an essential step in the system-on-chip (SOC) manufacturing process. Optical probing of an array of polymer pillar-based optical I/O interconnects is demonstrated for the first time, to the authors' knowledge.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121813307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low resistive and highly reliable Cu dual-damascene interconnect technology using self-formed MnSi/sub x/O/sub y/ barrier layer 采用自形成的MnSi/sub x/O/sub y/阻挡层的低电阻和高可靠的Cu双damase互连技术
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499975
T. Usui, H. Nasu, J. Koike, M. Wada, S. Takahashi, N. Shimizu, T. Nishikawa, A. Yoshimaru, H. Shibata
{"title":"Low resistive and highly reliable Cu dual-damascene interconnect technology using self-formed MnSi/sub x/O/sub y/ barrier layer","authors":"T. Usui, H. Nasu, J. Koike, M. Wada, S. Takahashi, N. Shimizu, T. Nishikawa, A. Yoshimaru, H. Shibata","doi":"10.1109/IITC.2005.1499975","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499975","url":null,"abstract":"Copper (Cu) dual-damascene interconnects with self-formed MnSi/sub x/O/sub y/ barrier layer using a copper-manganese (Cu-Mn) alloy seed layer is successfully fabricated for the first time. No delamination is found in the chemical mechanical polishing process, probably because of better adhesion strength between the MnSi/sub x/O/sub y/ barrier and dielectric. More than 90% yield is obtained for a 1 million via chain. Microstructure analysis by transmission electron microscopy shows that an approximately 2 nm thick and continuous MnSi/sub x/O/sub y/ layer is formed at the interface between Cu and dielectric of the via and trench and there is no barrier at the via bottom. This via structure without the bottom barrier provides these essential advantages: reduced via resistance; significant via-electromigration lifetime improvement due to there being no flux divergence site at the via; excellent stress-induced voiding performance.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121387011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The impact of technology on power for high-speed electrical and optical interconnects 技术对高速电光互连电源的影响
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499970
H. Cho, P. Kapur, K. Saraswat
{"title":"The impact of technology on power for high-speed electrical and optical interconnects","authors":"H. Cho, P. Kapur, K. Saraswat","doi":"10.1109/IITC.2005.1499970","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499970","url":null,"abstract":"The impact of technology scaling - in the form of transistor performance improvement and a higher demand in bit rate - on power dissipation of short distance electrical and optical interconnects is extensively quantified. We find that: 1) the transistor performance improvement has a similar impact on both types of interconnects, leaving critical length (length above which optical interconnects dissipate lower power) relatively unchanged; 2) the increase in bit rate significantly reduces critical length, favoring optics; 3) at the 32 nm technology node (and beyond) with its commensurate bandwidth requirement, optical interconnect becomes favorable for distances as low as 10 cm corresponding to inter-chip communication; 4) most critical factors in making optical interconnects favorable are reduction in coupling losses and optical detector capacitance.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"410 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133727969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Minimizing energy-per-bit for on-board LC transmission lines 最大限度地降低车载LC传输线的每比特能量
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499930
Gang Huang, A. Naeemi, J. Meindl
{"title":"Minimizing energy-per-bit for on-board LC transmission lines","authors":"Gang Huang, A. Naeemi, J. Meindl","doi":"10.1109/IITC.2005.1499930","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499930","url":null,"abstract":"Tuning down the signal voltage swing can be used to save energy for on-board interconnects. In this paper, we demonstrate that energy-per-bit, the energy to transfer a signal bit of data, could be minimized by selecting an optimum signal swing voltage for a given noise condition. The maximum energy saving and area overhead for this technique are derived. By using a proper power supply scheme, the energy-per-bit can be decreased by 2.5/spl times/ while consuming about 1.5/spl times/ more on-board wiring area.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116243296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-performance AlO-laminated TaO MIM capacitors for RF-IC applications: effects of the AlO layer on electrical characteristics RF-IC应用的高性能AlO层合TaO MIM电容器:AlO层对电特性的影响
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499936
K. Takeda, T. Mine, T. Ishikawa, T. Imai, T. Fujiwara
{"title":"High-performance AlO-laminated TaO MIM capacitors for RF-IC applications: effects of the AlO layer on electrical characteristics","authors":"K. Takeda, T. Mine, T. Ishikawa, T. Imai, T. Fujiwara","doi":"10.1109/IITC.2005.1499936","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499936","url":null,"abstract":"The successful integration of a metal-insulator-metal (MIM) capacitor with an AlO/TaO/AlO stack is demonstrated. High capacitance density of more than 10 fF//spl mu/m/sup 2/ at 3.3 V and superior high-frequency characteristics are confirmed. The TDDB lifetime of the capacitor is strongly dependent on the electric field strength in the AlO layer, so the lifetime can be predicted by using the TDDB lifetime of a single-layer AlO capacitor. The capacitance voltage dependence of the AlO/TaO/AlO capacitor is dominated by the change in capacitance in the AlO layer. Thus, the voltage-linearity coefficients of single-layer AlO capacitors can be used to predict the coefficients of AlO/TaO/AlO capacitors.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124791153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New spin-on oxycarbosilane low-k dielectric materials with exceptional mechanical properties 具有优异力学性能的新型自旋氧碳硅烷低k介电材料
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499991
D. Geraud, T. Magbitang, W. Volksen, E. Simonyi, R. Miller
{"title":"New spin-on oxycarbosilane low-k dielectric materials with exceptional mechanical properties","authors":"D. Geraud, T. Magbitang, W. Volksen, E. Simonyi, R. Miller","doi":"10.1109/IITC.2005.1499991","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499991","url":null,"abstract":"Bridged oxycarbosilane monomers are excellent precursors for the formation of spin on porous low-k materials using sacrificial pore generators. The measured Young's modulus numbers for the as-synthesized thin films without any post porosity toughening are the highest by far of any that we have observed for porous films generated using the sacrificial porogen route. For a given dielectric constant, the Young's modulus of these oxycarbosilane films are 4-5 times higher than available organosilicates and at least 2 times higher than UV treated organosilicate materials.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122789412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects 铜/低钾互连用高贵TiZr/TiZrN合金阻挡层的集成和可靠性
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499955
B. Suh, Seungwook Choi, Y. Wee, Jung-Eun Lee, Junho Lee, Sun-jung Lee, Soo-Geun Lee, Hong-jae Shin, N. Lee, Ho-Kyu Kang, K. Suh
{"title":"Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects","authors":"B. Suh, Seungwook Choi, Y. Wee, Jung-Eun Lee, Junho Lee, Sun-jung Lee, Soo-Geun Lee, Hong-jae Shin, N. Lee, Ho-Kyu Kang, K. Suh","doi":"10.1109/IITC.2005.1499955","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499955","url":null,"abstract":"We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step annealing procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129351921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena 用正电子湮没寿命谱研究EP-Cu薄膜中空位的行为及其对SIV现象的影响
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499940
S. Ogawa, F. Shoji, T. Ohdaira, I. Suzuki, M. Shimada, R. Suzuki
{"title":"Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena","authors":"S. Ogawa, F. Shoji, T. Ohdaira, I. Suzuki, M. Shimada, R. Suzuki","doi":"10.1109/IITC.2005.1499940","DOIUrl":"https://doi.org/10.1109/IITC.2005.1499940","url":null,"abstract":"The behavior of vacancies in electroplated-Cu films has been characterized by a positron-annihilation lifetime spectroscopy (PALS) method correlated with stress-induced voiding (SIV) phenomena. Positron lifetime showed inverse correlation with sheet resistance, and Cu films plated with lower plating currents showed less lifetime (/spl tau/) and intensity (I) of long-lifetime components than those plated with higher currents with less SIV failures.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131345543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信