{"title":"The impact of technology on power for high-speed electrical and optical interconnects","authors":"H. Cho, P. Kapur, K. Saraswat","doi":"10.1109/IITC.2005.1499970","DOIUrl":null,"url":null,"abstract":"The impact of technology scaling - in the form of transistor performance improvement and a higher demand in bit rate - on power dissipation of short distance electrical and optical interconnects is extensively quantified. We find that: 1) the transistor performance improvement has a similar impact on both types of interconnects, leaving critical length (length above which optical interconnects dissipate lower power) relatively unchanged; 2) the increase in bit rate significantly reduces critical length, favoring optics; 3) at the 32 nm technology node (and beyond) with its commensurate bandwidth requirement, optical interconnect becomes favorable for distances as low as 10 cm corresponding to inter-chip communication; 4) most critical factors in making optical interconnects favorable are reduction in coupling losses and optical detector capacitance.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"410 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The impact of technology scaling - in the form of transistor performance improvement and a higher demand in bit rate - on power dissipation of short distance electrical and optical interconnects is extensively quantified. We find that: 1) the transistor performance improvement has a similar impact on both types of interconnects, leaving critical length (length above which optical interconnects dissipate lower power) relatively unchanged; 2) the increase in bit rate significantly reduces critical length, favoring optics; 3) at the 32 nm technology node (and beyond) with its commensurate bandwidth requirement, optical interconnect becomes favorable for distances as low as 10 cm corresponding to inter-chip communication; 4) most critical factors in making optical interconnects favorable are reduction in coupling losses and optical detector capacitance.