技术对高速电光互连电源的影响

H. Cho, P. Kapur, K. Saraswat
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引用次数: 4

摘要

以晶体管性能改进和对比特率的更高要求为形式的技术缩放对短距离电和光互连的功耗的影响被广泛量化。我们发现:1)晶体管性能的提高对两种类型的互连具有相似的影响,使临界长度(超过该长度的光互连耗散较低的功率)相对不变;2)比特率的增加显著降低了临界长度,有利于光学;3)在32nm(及以上)技术节点,其带宽要求相当,光互连有利于低至10cm的芯片间通信距离;使光互连有利的最关键因素是减少耦合损耗和光检测器电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The impact of technology on power for high-speed electrical and optical interconnects
The impact of technology scaling - in the form of transistor performance improvement and a higher demand in bit rate - on power dissipation of short distance electrical and optical interconnects is extensively quantified. We find that: 1) the transistor performance improvement has a similar impact on both types of interconnects, leaving critical length (length above which optical interconnects dissipate lower power) relatively unchanged; 2) the increase in bit rate significantly reduces critical length, favoring optics; 3) at the 32 nm technology node (and beyond) with its commensurate bandwidth requirement, optical interconnect becomes favorable for distances as low as 10 cm corresponding to inter-chip communication; 4) most critical factors in making optical interconnects favorable are reduction in coupling losses and optical detector capacitance.
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