用正电子湮没寿命谱研究EP-Cu薄膜中空位的行为及其对SIV现象的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499940

S. Ogawa, F. Shoji, T. Ohdaira, I. Suzuki, M. Shimada, R. Suzuki

{"title":"用正电子湮没寿命谱研究EP-Cu薄膜中空位的行为及其对SIV现象的影响","authors":"S. Ogawa, F. Shoji, T. Ohdaira, I. Suzuki, M. Shimada, R. Suzuki","doi":"10.1109/IITC.2005.1499940","DOIUrl":null,"url":null,"abstract":"The behavior of vacancies in electroplated-Cu films has been characterized by a positron-annihilation lifetime spectroscopy (PALS) method correlated with stress-induced voiding (SIV) phenomena. Positron lifetime showed inverse correlation with sheet resistance, and Cu films plated with lower plating currents showed less lifetime (/spl tau/) and intensity (I) of long-lifetime components than those plated with higher currents with less SIV failures.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena\",\"authors\":\"S. Ogawa, F. Shoji, T. Ohdaira, I. Suzuki, M. Shimada, R. Suzuki\",\"doi\":\"10.1109/IITC.2005.1499940\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The behavior of vacancies in electroplated-Cu films has been characterized by a positron-annihilation lifetime spectroscopy (PALS) method correlated with stress-induced voiding (SIV) phenomena. Positron lifetime showed inverse correlation with sheet resistance, and Cu films plated with lower plating currents showed less lifetime (/spl tau/) and intensity (I) of long-lifetime components than those plated with higher currents with less SIV failures.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499940\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用正电子湮灭寿命谱(PALS)方法研究了cu镀层中空位的行为，并将其与应力诱导空化(SIV)现象联系起来。正电子寿命与片电阻呈负相关，低电流镀Cu膜的长寿命元件寿命(/spl tau/)和强度(I)小于高电流镀Cu膜，SIV失效较少。

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Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena

The behavior of vacancies in electroplated-Cu films has been characterized by a positron-annihilation lifetime spectroscopy (PALS) method correlated with stress-induced voiding (SIV) phenomena. Positron lifetime showed inverse correlation with sheet resistance, and Cu films plated with lower plating currents showed less lifetime (/spl tau/) and intensity (I) of long-lifetime components than those plated with higher currents with less SIV failures.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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