铜/低钾互连用高贵TiZr/TiZrN合金阻挡层的集成和可靠性

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499955

B. Suh, Seungwook Choi, Y. Wee, Jung-Eun Lee, Junho Lee, Sun-jung Lee, Soo-Geun Lee, Hong-jae Shin, N. Lee, Ho-Kyu Kang, K. Suh

{"title":"铜/低钾互连用高贵TiZr/TiZrN合金阻挡层的集成和可靠性","authors":"B. Suh, Seungwook Choi, Y. Wee, Jung-Eun Lee, Junho Lee, Sun-jung Lee, Soo-Geun Lee, Hong-jae Shin, N. Lee, Ho-Kyu Kang, K. Suh","doi":"10.1109/IITC.2005.1499955","DOIUrl":null,"url":null,"abstract":"We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step annealing procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects\",\"authors\":\"B. Suh, Seungwook Choi, Y. Wee, Jung-Eun Lee, Junho Lee, Sun-jung Lee, Soo-Geun Lee, Hong-jae Shin, N. Lee, Ho-Kyu Kang, K. Suh\",\"doi\":\"10.1109/IITC.2005.1499955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step annealing procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们研究了TiZr合金作为一种低成本、高性能Cu/低k互连的新型Cu势垒材料。采用TiZrN三元氮化物作为Cu扩散屏障，TiZr作为粘附促进层。采用一种新的两步退火方法抑制了金属线电阻移位的问题。成功地实现了多层铜金属布线集成，获得了低通孔电阻和高通孔成品率的电性能增强。改进的电迁移和应力诱导的排空电阻也被证明。

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Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects

We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step annealing procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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